JPS5773174A - Manufacturing apparatus for coating film - Google Patents

Manufacturing apparatus for coating film

Info

Publication number
JPS5773174A
JPS5773174A JP14902580A JP14902580A JPS5773174A JP S5773174 A JPS5773174 A JP S5773174A JP 14902580 A JP14902580 A JP 14902580A JP 14902580 A JP14902580 A JP 14902580A JP S5773174 A JPS5773174 A JP S5773174A
Authority
JP
Japan
Prior art keywords
substrates
chamber
furnace
gas
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14902580A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0325928B2 (ko
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP14902580A priority Critical patent/JPS5773174A/ja
Publication of JPS5773174A publication Critical patent/JPS5773174A/ja
Publication of JPH0325928B2 publication Critical patent/JPH0325928B2/ja
Priority to JP4037168A priority patent/JP2626701B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP14902580A 1980-10-24 1980-10-24 Manufacturing apparatus for coating film Granted JPS5773174A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14902580A JPS5773174A (en) 1980-10-24 1980-10-24 Manufacturing apparatus for coating film
JP4037168A JP2626701B2 (ja) 1980-10-24 1992-01-28 Ｍｉｓ型電界効果半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14902580A JPS5773174A (en) 1980-10-24 1980-10-24 Manufacturing apparatus for coating film

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4037168A Division JP2626701B2 (ja) 1980-10-24 1992-01-28 Ｍｉｓ型電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS5773174A true JPS5773174A (en) 1982-05-07
JPH0325928B2 JPH0325928B2 (ko) 1991-04-09

Family

ID=15466017

Family Applications (2)

Application Number Title Priority Date Filing Date
JP14902580A Granted JPS5773174A (en) 1980-10-24 1980-10-24 Manufacturing apparatus for coating film
JP4037168A Expired - Lifetime JP2626701B2 (ja) 1980-10-24 1992-01-28 Ｍｉｓ型電界効果半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP4037168A Expired - Lifetime JP2626701B2 (ja) 1980-10-24 1992-01-28 Ｍｉｓ型電界効果半導体装置

Country Status (1)

Country Link
JP (2) JPS5773174A (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043485A (ja) * 1983-08-19 1985-03-08 Mitsui Toatsu Chem Inc アモルフアスシリコン膜の形成方法
JPS60131970A (ja) * 1983-12-20 1985-07-13 Canon Inc 堆積膜形成法
JPS60129132U (ja) * 1984-02-06 1985-08-30 株式会社日立国際電気 プラズマ気相成長装置の電極板と基板の配置
CN102732835A (zh) * 2012-07-13 2012-10-17 中国建材国际工程集团有限公司 一种用于真空镀膜设备的双气源充气系统及其充气方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2418672C2 (ru) * 2005-03-15 2011-05-20 Хтк Свиден Аб Способ ухода, подходящий для ежедневного применения, за твердыми поверхностями пола из камня или камнеподобного материала
JP6204917B2 (ja) * 2011-10-07 2017-09-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ アルゴンガス希釈によるシリコン含有層を堆積するための方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50110283A (ko) * 1974-02-06 1975-08-30
JPS5362982A (en) * 1976-11-17 1978-06-05 Toshiba Corp Plasma cvd apparatus
JPS5391085A (en) * 1977-01-24 1978-08-10 Hitachi Ltd Deposition apparatus of gas phase chemical reaction substance utilized plasma discharge
JPS5558362A (en) * 1978-10-26 1980-05-01 Matsushita Electric Ind Co Ltd Preparation of thin film

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054919B2 (ja) * 1976-08-06 1985-12-02 株式会社日立製作所 低圧反応装置
JPS53126271A (en) * 1977-04-11 1978-11-04 Kokusai Electric Co Ltd Reduced pressure gaseous growing method and boarding jig
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device
JPH0325928A (ja) * 1989-06-23 1991-02-04 Nec Corp 半導体ウェハーのランプ式熱処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50110283A (ko) * 1974-02-06 1975-08-30
JPS5362982A (en) * 1976-11-17 1978-06-05 Toshiba Corp Plasma cvd apparatus
JPS5391085A (en) * 1977-01-24 1978-08-10 Hitachi Ltd Deposition apparatus of gas phase chemical reaction substance utilized plasma discharge
JPS5558362A (en) * 1978-10-26 1980-05-01 Matsushita Electric Ind Co Ltd Preparation of thin film

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043485A (ja) * 1983-08-19 1985-03-08 Mitsui Toatsu Chem Inc アモルフアスシリコン膜の形成方法
JPS60131970A (ja) * 1983-12-20 1985-07-13 Canon Inc 堆積膜形成法
JPH0517312B2 (ko) * 1983-12-20 1993-03-08 Canon Kk
JPS60129132U (ja) * 1984-02-06 1985-08-30 株式会社日立国際電気 プラズマ気相成長装置の電極板と基板の配置
CN102732835A (zh) * 2012-07-13 2012-10-17 中国建材国际工程集团有限公司 一种用于真空镀膜设备的双气源充气系统及其充气方法

Also Published As

Publication number Publication date
JPH0562919A (ja) 1993-03-12
JP2626701B2 (ja) 1997-07-02
JPH0325928B2 (ko) 1991-04-09

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