JPS572575A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS572575A
JPS572575A JP7637680A JP7637680A JPS572575A JP S572575 A JPS572575 A JP S572575A JP 7637680 A JP7637680 A JP 7637680A JP 7637680 A JP7637680 A JP 7637680A JP S572575 A JPS572575 A JP S572575A
Authority
JP
Japan
Prior art keywords
layer
conductive layer
setting
control voltage
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7637680A
Other languages
English (en)
Inventor
Kuniharu Kato
Hitoshi Nagano
Yuki Shimada
Kenji Hideshima
Hisashi Haneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
NTT Inc
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7637680A priority Critical patent/JPS572575A/ja
Publication of JPS572575A publication Critical patent/JPS572575A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP7637680A 1980-06-06 1980-06-06 Insulated gate type field effect transistor Pending JPS572575A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7637680A JPS572575A (en) 1980-06-06 1980-06-06 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7637680A JPS572575A (en) 1980-06-06 1980-06-06 Insulated gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS572575A true JPS572575A (en) 1982-01-07

Family

ID=13603612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7637680A Pending JPS572575A (en) 1980-06-06 1980-06-06 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS572575A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0640429A (ja) * 1990-06-07 1994-02-15 Ima Ind Macc Autom Spa 平らな状態のチューブ状ブランクからカートンを製造する装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0640429A (ja) * 1990-06-07 1994-02-15 Ima Ind Macc Autom Spa 平らな状態のチューブ状ブランクからカートンを製造する装置

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