JPS57166067A - Bias generating unit for substrate - Google Patents

Bias generating unit for substrate

Info

Publication number
JPS57166067A
JPS57166067A JP56052033A JP5203381A JPS57166067A JP S57166067 A JPS57166067 A JP S57166067A JP 56052033 A JP56052033 A JP 56052033A JP 5203381 A JP5203381 A JP 5203381A JP S57166067 A JPS57166067 A JP S57166067A
Authority
JP
Japan
Prior art keywords
region
substrate
regions
type
generating unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56052033A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0219979B2 (enrdf_load_stackoverflow
Inventor
Tetsuya Iizuka
Hiroshi Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56052033A priority Critical patent/JPS57166067A/ja
Priority to US06/364,639 priority patent/US4559548A/en
Priority to DE8282102994T priority patent/DE3276920D1/de
Priority to EP82102994A priority patent/EP0062894B1/en
Publication of JPS57166067A publication Critical patent/JPS57166067A/ja
Publication of JPH0219979B2 publication Critical patent/JPH0219979B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56052033A 1981-04-07 1981-04-07 Bias generating unit for substrate Granted JPS57166067A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56052033A JPS57166067A (en) 1981-04-07 1981-04-07 Bias generating unit for substrate
US06/364,639 US4559548A (en) 1981-04-07 1982-04-02 CMOS Charge pump free of parasitic injection
DE8282102994T DE3276920D1 (en) 1981-04-07 1982-04-07 Semiconductor device
EP82102994A EP0062894B1 (en) 1981-04-07 1982-04-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56052033A JPS57166067A (en) 1981-04-07 1981-04-07 Bias generating unit for substrate

Publications (2)

Publication Number Publication Date
JPS57166067A true JPS57166067A (en) 1982-10-13
JPH0219979B2 JPH0219979B2 (enrdf_load_stackoverflow) 1990-05-07

Family

ID=12903493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56052033A Granted JPS57166067A (en) 1981-04-07 1981-04-07 Bias generating unit for substrate

Country Status (1)

Country Link
JP (1) JPS57166067A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62155547A (ja) * 1985-12-27 1987-07-10 Mitsubishi Electric Corp 基板電位発生装置
JPS62188254A (ja) * 1986-02-13 1987-08-17 Matsushita Electronics Corp 半導体装置
KR20000018511A (ko) * 1998-09-02 2000-04-06 김영환 바이어스 전압 발생기의 레이 아웃방법
JP2005354064A (ja) * 2004-06-08 2005-12-22 Saifun Semiconductors Ltd 低減された寄生静電容量を備えたｍｏｓキャパシタ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55175259U (enrdf_load_stackoverflow) * 1979-05-31 1980-12-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55175259U (enrdf_load_stackoverflow) * 1979-05-31 1980-12-16

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62155547A (ja) * 1985-12-27 1987-07-10 Mitsubishi Electric Corp 基板電位発生装置
JPS62188254A (ja) * 1986-02-13 1987-08-17 Matsushita Electronics Corp 半導体装置
KR20000018511A (ko) * 1998-09-02 2000-04-06 김영환 바이어스 전압 발생기의 레이 아웃방법
JP2005354064A (ja) * 2004-06-08 2005-12-22 Saifun Semiconductors Ltd 低減された寄生静電容量を備えたｍｏｓキャパシタ

Also Published As

Publication number Publication date
JPH0219979B2 (enrdf_load_stackoverflow) 1990-05-07

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