DE3276920D1 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
DE3276920D1
DE3276920D1 DE8282102994T DE3276920T DE3276920D1 DE 3276920 D1 DE3276920 D1 DE 3276920D1 DE 8282102994 T DE8282102994 T DE 8282102994T DE 3276920 T DE3276920 T DE 3276920T DE 3276920 D1 DE3276920 D1 DE 3276920D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282102994T
Other languages
German (de)
Inventor
Tetsuya Iizuka
Hisashi Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5203281A external-priority patent/JPS57166066A/en
Priority claimed from JP5203381A external-priority patent/JPS57166067A/en
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3276920D1 publication Critical patent/DE3276920D1/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0222—Charge pumping, substrate bias generation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE8282102994T 1981-04-07 1982-04-07 Semiconductor device Expired DE3276920D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5203281A JPS57166066A (en) 1981-04-07 1981-04-07 Bias generating system for substrate
JP5203381A JPS57166067A (en) 1981-04-07 1981-04-07 Bias generating unit for substrate

Publications (1)

Publication Number Publication Date
DE3276920D1 true DE3276920D1 (en) 1987-09-10

Family

ID=26392639

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282102994T Expired DE3276920D1 (en) 1981-04-07 1982-04-07 Semiconductor device

Country Status (3)

Country Link
US (1) US4559548A (en)
EP (1) EP0062894B1 (en)
DE (1) DE3276920D1 (en)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3743930A1 (en) * 1987-12-23 1989-07-06 Siemens Ag INTEGRATED CIRCUIT WITH "LATCH-UP" PROTECTIVE CIRCUIT IN COMPLEMENTARY MOS CIRCUIT TECHNOLOGY
JPS58122766A (en) * 1982-01-14 1983-07-21 Toshiba Corp Semiconductor device
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
US4670669A (en) * 1984-08-13 1987-06-02 International Business Machines Corporation Charge pumping structure for a substrate bias generator
US4647956A (en) * 1985-02-12 1987-03-03 Cypress Semiconductor Corp. Back biased CMOS device with means for eliminating latchup
US4628214A (en) * 1985-05-22 1986-12-09 Sgs Semiconductor Corporation Back bias generator
JPS6266656A (en) * 1985-09-19 1987-03-26 Toshiba Corp Substrate potential generating circuit
JPH0750552B2 (en) * 1985-12-20 1995-05-31 三菱電機株式会社 Internal potential generation circuit
JPS62155547A (en) * 1985-12-27 1987-07-10 Mitsubishi Electric Corp Substrate potential generator
FR2596931B1 (en) * 1986-04-04 1993-03-26 Thomson Csf CONTINUOUS VOLTAGE MULTIPLIER THAT CAN BE INTEGRATED INTO A SEMICONDUCTOR STRUCTURE
US4875151A (en) * 1986-08-11 1989-10-17 Ncr Corporation Two transistor full wave rectifier
US4720467A (en) * 1986-09-29 1988-01-19 International Business Machines Corporation Method of forming a capacitor-transistor integrated circuit
IT1217104B (en) * 1987-03-03 1990-03-14 Sgs Microelettronica Spa TWO-POWER CMOS INTEGRATED CIRCUIT WITH AN INTEGRATED MOS TRANSISTOR FOR PROTECTION AGAINST THE <<LATCH-UP>>.
US4933573A (en) * 1987-09-18 1990-06-12 Fuji Electric Co., Ltd. Semiconductor integrated circuit
NL8702734A (en) * 1987-11-17 1989-06-16 Philips Nv VOLTAGE MULTIPLICATING CIRCUIT AND rectifying element.
US5006974A (en) * 1987-12-24 1991-04-09 Waferscale Integration Inc. On-chip high voltage generator and regulator in an integrated circuit
JPH0666443B2 (en) * 1988-07-07 1994-08-24 株式会社東芝 Semiconductor memory cell and semiconductor memory
US5008799A (en) * 1990-04-05 1991-04-16 Montalvo Antonio J Back-to-back capacitor charge pumps
EP0478793B1 (en) * 1990-04-13 1999-07-14 Kabushiki Kaisha Toshiba Method of preventing voltage variation in a semiconductor device
KR930008876B1 (en) * 1990-08-17 1993-09-16 현대전자산업 주식회사 High voltage generating circuit of semicondcutor device
US5081371A (en) * 1990-11-07 1992-01-14 U.S. Philips Corp. Integrated charge pump circuit with back bias voltage reduction
JP2968836B2 (en) * 1990-11-30 1999-11-02 日本テキサス・インスツルメンツ株式会社 Semiconductor substrate potential generation circuit
US5364801A (en) * 1990-12-17 1994-11-15 Texas Instruments Incorporated Method of forming a charge pump circuit
KR940003153B1 (en) * 1991-04-12 1994-04-15 금성일렉트론 주식회사 Back bias generater
DE59308057D1 (en) * 1992-08-04 1998-03-05 Siemens Ag Drive circuit for a power MOSFET with source-side load
JPH0810760B2 (en) * 1993-01-13 1996-01-31 日本電気株式会社 Solid-state imaging device
TW283239B (en) * 1995-11-13 1996-08-11 Advanced Micro Devices Inc Improved charge pumps using accumulation capacitors
JPH09162713A (en) * 1995-12-11 1997-06-20 Mitsubishi Electric Corp Semiconductor integrated circuit
US5801934A (en) * 1996-12-12 1998-09-01 Cypress Semiconductor Corp. Charge pump with reduced power consumption
KR100243295B1 (en) * 1997-06-26 2000-02-01 윤종용 Back bias generator of semiconductor device and method thereof
US5999425A (en) * 1998-01-15 1999-12-07 Cypress Semiconductor Corp. Charge pump architecture for integrated circuit
US6075400A (en) * 1998-08-13 2000-06-13 Pericom Semiconductor Corp. Cancellation of injected charge in a bus switch
US6026003A (en) * 1998-12-18 2000-02-15 Motorola, Inc. Charge pump circuit and method for generating a bias voltage
US7679427B2 (en) * 2007-06-14 2010-03-16 Suvolta, Inc. Semiconductor device including a bias voltage generator
US7889523B2 (en) * 2007-10-10 2011-02-15 Freescale Semiconductor, Inc. Variable load, variable output charge-based voltage multipliers
US9583479B1 (en) * 2016-01-14 2017-02-28 Globalfoundries Inc. Semiconductor charge pump with imbedded capacitor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7212509A (en) * 1972-09-15 1974-03-19
JPS5472691A (en) * 1977-11-21 1979-06-11 Toshiba Corp Semiconductor device
JPS583105B2 (en) * 1978-02-10 1983-01-19 唐津 真一 metal shingle
JPS5950224B2 (en) * 1978-10-30 1984-12-07 富士通株式会社 semiconductor equipment
JPS55107255A (en) * 1979-02-12 1980-08-16 Mitsubishi Electric Corp Substrate potential generating circuit device

Also Published As

Publication number Publication date
EP0062894A2 (en) 1982-10-20
US4559548A (en) 1985-12-17
EP0062894A3 (en) 1985-05-22
EP0062894B1 (en) 1987-08-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)