DE3276920D1 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
DE3276920D1
DE3276920D1 DE19823276920 DE3276920A DE3276920D1 DE 3276920 D1 DE3276920 D1 DE 3276920D1 DE 19823276920 DE19823276920 DE 19823276920 DE 3276920 A DE3276920 A DE 3276920A DE 3276920 D1 DE3276920 D1 DE 3276920D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19823276920
Other languages
German (de)
Inventor
Tetsuya Iizuka
Hisashi Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP56052033A priority Critical patent/JPH0219979B2/ja
Priority to JP56052032A priority patent/JPH0224027B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3276920D1 publication Critical patent/DE3276920D1/en
Application status is Expired legal-status Critical

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205Substrate bias-voltage generators
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0222Charge pumping, substrate bias generation structures
DE19823276920 1981-04-07 1982-04-07 Semiconductor device Expired DE3276920D1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56052033A JPH0219979B2 (en) 1981-04-07 1981-04-07
JP56052032A JPH0224027B2 (en) 1981-04-07 1981-04-07

Publications (1)

Publication Number Publication Date
DE3276920D1 true DE3276920D1 (en) 1987-09-10

Family

ID=26392639

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823276920 Expired DE3276920D1 (en) 1981-04-07 1982-04-07 Semiconductor device

Country Status (3)

Country Link
US (1) US4559548A (en)
EP (1) EP0062894B1 (en)
DE (1) DE3276920D1 (en)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122766A (en) * 1982-01-14 1983-07-21 Toshiba Corp Semiconductor device
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
US4670669A (en) * 1984-08-13 1987-06-02 International Business Machines Corporation Charge pumping structure for a substrate bias generator
US4647956A (en) * 1985-02-12 1987-03-03 Cypress Semiconductor Corp. Back biased CMOS device with means for eliminating latchup
US4628214A (en) * 1985-05-22 1986-12-09 Sgs Semiconductor Corporation Back bias generator
JPH035064B2 (en) * 1985-09-19 1991-01-24 Tokyo Shibaura Electric Co
JPH0750552B2 (en) * 1985-12-20 1995-05-31 三菱電機株式会社 Internal potential generating circuit
JPS62155547A (en) * 1985-12-27 1987-07-10 Mitsubishi Electric Corp Substrate potential generator
FR2596931B1 (en) * 1986-04-04 1993-03-26 Thomson Csf DC voltage multiplier that may be incorporated into a semiconductor structure
US4875151A (en) * 1986-08-11 1989-10-17 Ncr Corporation Two transistor full wave rectifier
US4720467A (en) * 1986-09-29 1988-01-19 International Business Machines Corporation Method of forming a capacitor-transistor integrated circuit
IT1217104B (en) * 1987-03-03 1990-03-14 Sgs Microelettronica Spa Chip CMOS two feeds with an integrated MOS transistor protection << latch-up >>.
US4933573A (en) * 1987-09-18 1990-06-12 Fuji Electric Co., Ltd. Semiconductor integrated circuit
NL8702734A (en) * 1987-11-17 1989-06-16 Philips Nv Voltage multiplier circuit and rectifying element.
DE3743930A1 (en) * 1987-12-23 1989-07-06 Siemens Ag Integrated circuit with "latch-up" protection circuit in complementary MOS circuit technology
US5006974A (en) * 1987-12-24 1991-04-09 Waferscale Integration Inc. On-chip high voltage generator and regulator in an integrated circuit
JPH0666443B2 (en) * 1988-07-07 1994-08-24 株式会社東芝 Semiconductor memory cell and semiconductor memory
US5008799A (en) * 1990-04-05 1991-04-16 Montalvo Antonio J Back-to-back capacitor charge pumps
DE69131441D1 (en) * 1990-04-13 1999-08-19 Toshiba Kk Way of preventing a voltage variation in a semiconductor device
KR930008876B1 (en) * 1990-08-17 1993-09-16 정몽헌 High voltage generating circuit of semicondcutor device
US5081371A (en) * 1990-11-07 1992-01-14 U.S. Philips Corp. Integrated charge pump circuit with back bias voltage reduction
JP2968836B2 (en) * 1990-11-30 1999-11-02 日本テキサス・インスツルメンツ株式会社 Semiconductor substrate potential generating circuit
US5364801A (en) * 1990-12-17 1994-11-15 Texas Instruments Incorporated Method of forming a charge pump circuit
KR940003153B1 (en) * 1991-04-12 1994-04-15 문정환 Back bias generater
EP0582125B1 (en) * 1992-08-04 1998-01-28 Siemens Aktiengesellschaft Control circuit for a power MOSFET having a load connected to the source
JPH0810760B2 (en) * 1993-01-13 1996-01-31 日本電気株式会社 The solid-state imaging device
TW283239B (en) * 1995-11-13 1996-08-11 Advanced Micro Devices Inc Improved charge pumps using accumulation capacitors
JPH09162713A (en) * 1995-12-11 1997-06-20 Mitsubishi Electric Corp Semiconductor integrated circuit
US5999425A (en) * 1998-01-15 1999-12-07 Cypress Semiconductor Corp. Charge pump architecture for integrated circuit
US5801934A (en) * 1996-12-12 1998-09-01 Cypress Semiconductor Corp. Charge pump with reduced power consumption
KR100243295B1 (en) * 1997-06-26 2000-02-01 윤종용 Back bias generator of semiconductor device and method thereof
US6075400A (en) * 1998-08-13 2000-06-13 Pericom Semiconductor Corp. Cancellation of injected charge in a bus switch
US6026003A (en) * 1998-12-18 2000-02-15 Motorola, Inc. Charge pump circuit and method for generating a bias voltage
US7679427B2 (en) * 2007-06-14 2010-03-16 Suvolta, Inc. Semiconductor device including a bias voltage generator
US7889523B2 (en) * 2007-10-10 2011-02-15 Freescale Semiconductor, Inc. Variable load, variable output charge-based voltage multipliers
US9583479B1 (en) * 2016-01-14 2017-02-28 Globalfoundries Inc. Semiconductor charge pump with imbedded capacitor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7212509A (en) * 1972-09-15 1974-03-19
JPS6124830B2 (en) * 1977-11-21 1986-06-12 Tokyo Shibaura Electric Co
JPS583105B2 (en) * 1978-02-10 1983-01-19 Shinichi Karatsu
JPS5950224B2 (en) * 1978-10-30 1984-12-07 Fujitsu Ltd
JPS5644571B2 (en) * 1979-02-12 1981-10-20

Also Published As

Publication number Publication date
EP0062894A3 (en) 1985-05-22
EP0062894B1 (en) 1987-08-05
US4559548A (en) 1985-12-17
EP0062894A2 (en) 1982-10-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licenses declared (paragraph 23)