TW283239B - Improved charge pumps using accumulation capacitors - Google Patents

Improved charge pumps using accumulation capacitors

Info

Publication number
TW283239B
TW283239B TW084113740A TW84113740A TW283239B TW 283239 B TW283239 B TW 283239B TW 084113740 A TW084113740 A TW 084113740A TW 84113740 A TW84113740 A TW 84113740A TW 283239 B TW283239 B TW 283239B
Authority
TW
Taiwan
Prior art keywords
accumulation capacitors
accumulation
mos transistors
capacitors
terminal
Prior art date
Application number
TW084113740A
Other languages
Chinese (zh)
Inventor
E Cleveland Lee
k kim Yong
K Chang Chung
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of TW283239B publication Critical patent/TW283239B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0222—Charge pumping, substrate bias generation structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A charge pump circuit utilizing accumulation capacitors for use in EEPROM devices so as to internally pump up an external power source voltage includes a plurality of MOS transistors (T101, T102; T201, T202) and accumulation capacitors (N2, P2). The plurality of MOS transistors are connected in series between a first input voltage terminal and a higher voltage output terminal. The first input voltage terminal receives the external power source voltage. The accumulation capacitor has a first plate and a second plate. Each of the first plates of the accumulation capacitors is connected between adjacent ones of the plurality of MOS transistors. Each of the second plates of the accumulation capacitors is connected to a second input terminal for receiving a clock signal. As a result, the pump circuit can be operated effectively so as to produce a significant reduction in power consumption.
TW084113740A 1995-11-13 1995-12-22 Improved charge pumps using accumulation capacitors TW283239B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55811995A 1995-11-13 1995-11-13

Publications (1)

Publication Number Publication Date
TW283239B true TW283239B (en) 1996-08-11

Family

ID=24228287

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084113740A TW283239B (en) 1995-11-13 1995-12-22 Improved charge pumps using accumulation capacitors

Country Status (4)

Country Link
JP (1) JPH11511904A (en)
KR (1) KR19990067252A (en)
TW (1) TW283239B (en)
WO (1) WO1997018588A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI493852B (en) * 2012-08-15 2015-07-21 Omnivision Tech Inc Image sensor, step-up converter, and method of regulating a power supply

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6835491B2 (en) 1998-04-02 2004-12-28 The Board Of Trustees Of The University Of Illinois Battery having a built-in controller
US6074775A (en) * 1998-04-02 2000-06-13 The Procter & Gamble Company Battery having a built-in controller
US6118248A (en) * 1998-04-02 2000-09-12 The Procter & Gamble Company Battery having a built-in controller to extend battery service run time
US6163131A (en) * 1998-04-02 2000-12-19 The Procter & Gamble Company Battery having a built-in controller
US6198250B1 (en) 1998-04-02 2001-03-06 The Procter & Gamble Company Primary battery having a built-in controller to extend battery run time
US9397370B2 (en) 1999-06-25 2016-07-19 The Board Of Trustees Of The University Of Illinois Single and multiple cell battery with built-in controller
US6828654B2 (en) 2001-12-27 2004-12-07 Broadcom Corporation Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
WO2004112145A1 (en) 2003-06-10 2004-12-23 Fujitsu Limited Semiconductor integrated circuit device having improved punch-through resistance and its manufacturing method, and semiconductor integrated circuit device including low-voltage transistor and high-voltage transistor
KR102143520B1 (en) 2014-09-17 2020-08-11 삼성전자 주식회사 Pumping capacitor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4559548A (en) * 1981-04-07 1985-12-17 Tokyo Shibaura Denki Kabushiki Kaisha CMOS Charge pump free of parasitic injection
FR2694450B1 (en) * 1992-07-30 1994-10-21 Sgs Thomson Microelectronics CMOS capacitor.
US5386151A (en) * 1993-08-11 1995-01-31 Advanced Micro Devices, Inc. Low voltage charge pumps using p-well driven MOS capacitors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI493852B (en) * 2012-08-15 2015-07-21 Omnivision Tech Inc Image sensor, step-up converter, and method of regulating a power supply

Also Published As

Publication number Publication date
KR19990067252A (en) 1999-08-16
JPH11511904A (en) 1999-10-12
WO1997018588A1 (en) 1997-05-22

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