AU2002214898A1 - Charge pump power supply - Google Patents

Charge pump power supply

Info

Publication number
AU2002214898A1
AU2002214898A1 AU2002214898A AU1489802A AU2002214898A1 AU 2002214898 A1 AU2002214898 A1 AU 2002214898A1 AU 2002214898 A AU2002214898 A AU 2002214898A AU 1489802 A AU1489802 A AU 1489802A AU 2002214898 A1 AU2002214898 A1 AU 2002214898A1
Authority
AU
Australia
Prior art keywords
charge pump
pump
clock signal
power supply
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002214898A
Inventor
Paul W. Demone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Publication of AU2002214898A1 publication Critical patent/AU2002214898A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G04—HOROLOGY
    • G04G—ELECTRONIC TIME-PIECES
    • G04G19/00—Electric power supply circuits specially adapted for use in electronic time-pieces
    • G04G19/02—Conversion or regulation of current or voltage
    • G04G19/04—Capacitive voltage division or multiplication
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/15—Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors
    • H03K5/151—Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors with two complementary outputs
    • H03K5/1515—Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors with two complementary outputs non-overlapping

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Dram (AREA)
  • Dc-Dc Converters (AREA)
  • Control Of The Air-Fuel Ratio Of Carburetors (AREA)
  • Lubrication Of Internal Combustion Engines (AREA)
  • Steering Control In Accordance With Driving Conditions (AREA)
  • Electronic Switches (AREA)

Abstract

A cascaded charge pump based power supply for use with low voltage dynamic random access memory (DRAM) includes a charge pump and a non-overlapping clock signal generator. The charge pump circuit has two pump cascades coupled in parallel. Each pump cascade includes a plurality of pump stages connected serially between a power supply voltage and an output supply node. Adjacent stages of each cascade are clocked on opposite phases of the system clock signal. The charge pump drives an output supply node on both the rising and falling edge of the system clock signal. A non-overlapping clock signal generator for use with a charge pump has a charge sharing transistor which equalizes the non-overlapping output clock signals through charge sharing during the non-overlap period between subsequent phases of the system clock. The charge pump and capacitors are implemented using p-channel devices and the first stage of each cascade is constructed using thin-oxide devices.
AU2002214898A 2000-11-21 2001-11-20 Charge pump power supply Abandoned AU2002214898A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25221900P 2000-11-21 2000-11-21
US60/252,219 2000-11-21
US09/966,391 US6967523B2 (en) 2000-11-21 2001-09-28 Cascaded charge pump power supply with different gate oxide thickness transistors
US09/966,391 2001-09-28
PCT/CA2001/001615 WO2002043232A2 (en) 2000-11-21 2001-11-20 Charge pump power supply

Publications (1)

Publication Number Publication Date
AU2002214898A1 true AU2002214898A1 (en) 2002-06-03

Family

ID=26942129

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002214898A Abandoned AU2002214898A1 (en) 2000-11-21 2001-11-20 Charge pump power supply

Country Status (8)

Country Link
US (1) US6967523B2 (en)
EP (1) EP1338081B1 (en)
KR (1) KR100834195B1 (en)
AT (1) ATE334500T1 (en)
AU (1) AU2002214898A1 (en)
CA (1) CA2428747C (en)
DE (1) DE60121792T2 (en)
WO (1) WO2002043232A2 (en)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2843207B1 (en) 2002-07-30 2005-03-04 Centre Nat Rech Scient VOLTAGE / VOLTAGE CONVERTER WITH INTEGRATED CIRCUITS.
US6798275B1 (en) * 2003-04-03 2004-09-28 Advanced Micro Devices, Inc. Fast, accurate and low power supply voltage booster using A/D converter
US7116154B2 (en) * 2003-08-06 2006-10-03 Spansion Llc Low power charge pump
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
DE10357785B3 (en) * 2003-12-10 2005-05-04 Infineon Technologies Ag Linear switched capacitor circuit device using integrated deep-sub-micron technology has thick oxide transistors used in switched capacitor circuit
US7751879B2 (en) * 2004-04-12 2010-07-06 Advanced Neuromodulation Systems, Inc. Fractional voltage converter
US7180760B2 (en) 2004-04-12 2007-02-20 Advanced Neuromodulation Systems, Inc. Method of efficiently performing fractional voltage conversion and system comprising efficient fractional voltage converter circuitry
US9533164B2 (en) * 2004-04-12 2017-01-03 Advanced Neuromodulation Systems, Inc. Method for providing multiple voltage levels during pulse generation and implantable pulse generating employing the same
TWI261407B (en) * 2004-08-03 2006-09-01 Ememory Technology Inc Charge pump circuit
US7248096B2 (en) * 2004-11-22 2007-07-24 Stmicroelectronics S.R.L. Charge pump circuit with dynamic biasing of pass transistors
US7561866B2 (en) * 2005-02-22 2009-07-14 Impinj, Inc. RFID tags with power rectifiers that have bias
JP4175393B2 (en) * 2005-06-23 2008-11-05 セイコーエプソン株式会社 Semiconductor device and booster circuit
KR100725380B1 (en) * 2005-07-28 2007-06-07 삼성전자주식회사 Voltage generating circiut for semiconductor memory device, semiconductor memory device comprising the same and voltage generating method for semiconductor memory devices
US20070109035A1 (en) * 2005-11-16 2007-05-17 Michael Tsivyan Charge pump
JP4841282B2 (en) * 2006-03-24 2011-12-21 富士通セミコンダクター株式会社 Power supply device control circuit, power supply device, and control method therefor
KR100783187B1 (en) * 2006-07-28 2007-12-11 한양대학교 산학협력단 Charge transfer switch and voltage generator
US7915933B2 (en) * 2006-11-30 2011-03-29 Mosaid Technologies Incorporated Circuit for clamping current in a charge pump
US7613051B2 (en) 2007-03-14 2009-11-03 Apple Inc. Interleaving charge pumps for programmable memories
US7760010B2 (en) * 2007-10-30 2010-07-20 International Business Machines Corporation Switched-capacitor charge pumps
KR100908537B1 (en) * 2007-12-28 2009-07-20 주식회사 하이닉스반도체 High voltage providing device
EP2385616A2 (en) 2008-07-18 2011-11-09 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
US9660590B2 (en) 2008-07-18 2017-05-23 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
TWI382638B (en) * 2010-03-09 2013-01-11 Univ Nat Chiao Tung Charge pump
US8324960B2 (en) * 2010-08-03 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump doubler
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US9768683B2 (en) 2011-01-18 2017-09-19 Peregrine Semiconductor Corporation Differential charge pump
US9413362B2 (en) * 2011-01-18 2016-08-09 Peregrine Semiconductor Corporation Differential charge pump
US8686787B2 (en) 2011-05-11 2014-04-01 Peregrine Semiconductor Corporation High voltage ring pump with inverter stages and voltage boosting stages
CN102290983B (en) * 2011-06-16 2014-01-01 北京大学 Charge pump
DE102011086309A1 (en) * 2011-11-14 2013-05-16 Continental Automotive Gmbh Circuit arrangement with counter-phase working charge pumps for charging an electrical energy storage
WO2014145641A2 (en) * 2013-03-15 2014-09-18 Wispry, Inc. Charge pump systems and methods
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9385592B2 (en) * 2013-08-21 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Charge pump circuit and semiconductor device including the same
US9083231B2 (en) * 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en) 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
JP6354937B2 (en) * 2014-03-20 2018-07-11 セイコーエプソン株式会社 Drive circuit, integrated circuit device, and charge pump circuit control method
JP6289974B2 (en) * 2014-03-31 2018-03-07 ルネサスエレクトロニクス株式会社 Semiconductor device
KR102180001B1 (en) * 2014-07-14 2020-11-17 에스케이하이닉스 주식회사 Semiconductor device
US9379605B2 (en) * 2014-08-11 2016-06-28 Samsung Electronics Co., Ltd. Clocking circuit, charge pumps, and related methods of operation
JP6366433B2 (en) * 2014-09-03 2018-08-01 ルネサスエレクトロニクス株式会社 Semiconductor device
US9270266B1 (en) 2014-11-21 2016-02-23 Lg Chem, Ltd. High voltage switching circuit
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
JP6736675B2 (en) * 2015-09-17 2020-08-05 セネルジク、アクチボラグＸｅｎｅｒｇｉｃ Ａｂ SRAM architecture for leakage reduction
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
WO2018151854A1 (en) * 2017-02-16 2018-08-23 Wispry, Inc. Charge pump systems, devices, and methods
US20190311749A1 (en) * 2018-04-09 2019-10-10 Anaflash Inc. Logic Compatible Embedded Flash Memory
JP6535784B1 (en) 2018-04-25 2019-06-26 ウィンボンド エレクトロニクス コーポレーション Semiconductor memory device
CN110168467A (en) 2019-04-10 2019-08-23 长江存储科技有限责任公司 Reconfigurable voltage regulator
CN114204804B (en) * 2020-09-17 2024-04-16 圣邦微电子（北京）股份有限公司 Charge pump circuit
CN113285733B (en) * 2021-07-26 2021-09-24 成都华兴大地科技有限公司 Driving circuit for radio frequency transceiving

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES8307236A1 (en) * 1981-02-20 1983-02-01 Glaxo Group Ltd Process for the preparation of a furan derivative.
US4419336A (en) * 1982-03-29 1983-12-06 Norton Company Silicon carbide production and furnace
JPS63290159A (en) * 1987-05-20 1988-11-28 Matsushita Electric Ind Co Ltd Booster circuit
US5006974A (en) * 1987-12-24 1991-04-09 Waferscale Integration Inc. On-chip high voltage generator and regulator in an integrated circuit
US5014097A (en) 1987-12-24 1991-05-07 Waferscale Integration, Inc. On-chip high voltage generator and regulator in an integrated circuit
IT1221261B (en) 1988-06-28 1990-06-27 Sgs Thomson Microelectronics OMOS VOLTAGE MULTIPLIER
FR2663773A1 (en) 1990-06-21 1991-12-27 Sgs Thomson Microelectronic Sa LOADED PHASE LOAD PUMP DEVICE.
US5126590A (en) 1991-06-17 1992-06-30 Micron Technology, Inc. High efficiency charge pump
NL9200056A (en) * 1992-01-14 1993-08-02 Sierra Semiconductor Bv HIGH VOLTAGE GENERATOR WITH OUTPUT CURRENT CONTROL.
US5280420A (en) 1992-10-02 1994-01-18 National Semiconductor Corporation Charge pump which operates on a low voltage power supply
US5721509A (en) 1996-02-05 1998-02-24 Motorola, Inc. Charge pump having reduced threshold voltage losses
US5625544A (en) * 1996-04-25 1997-04-29 Programmable Microelectronics Corp. Charge pump
IT1290168B1 (en) 1996-12-23 1998-10-19 Consorzio Eagle NEGATIVE VOLTAGE CHARGE PUMP FOR FLASH EEPROM MEMORIES
US6100752A (en) 1997-09-12 2000-08-08 Information Storage Devices, Inc. Method and apparatus for reducing power supply current surges in a charge pump using a delayed clock line
JP3540652B2 (en) * 1998-04-10 2004-07-07 三洋電機株式会社 Charge pump type booster circuit
WO2000038303A1 (en) 1998-12-21 2000-06-29 Infineon Technologies Ag High efficiency voltage multiplication device and its use
EP1014547A3 (en) * 1998-12-21 2000-11-15 Fairchild Semiconductor Corporation Low-current charge pump system
US6037622A (en) * 1999-03-29 2000-03-14 Winbond Electronics Corporation Charge pump circuits for low supply voltages
FR2800934B1 (en) 1999-11-10 2002-01-18 Mhs CHARGE PUMP TYPE VOLTAGE LIFTING CIRCUIT
JP2002026254A (en) * 2000-07-03 2002-01-25 Hitachi Ltd Semiconductor integrated circuit and nonvolatile memory

Also Published As

Publication number Publication date
US6967523B2 (en) 2005-11-22
EP1338081B1 (en) 2006-07-26
WO2002043232A3 (en) 2003-01-03
ATE334500T1 (en) 2006-08-15
CA2428747A1 (en) 2002-05-30
KR100834195B1 (en) 2008-05-30
US20020101744A1 (en) 2002-08-01
DE60121792D1 (en) 2006-09-07
DE60121792T2 (en) 2007-08-02
CA2428747C (en) 2009-11-17
KR20030061406A (en) 2003-07-18
EP1338081A2 (en) 2003-08-27
WO2002043232A2 (en) 2002-05-30

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