JPS57161743A - Method of applying resist pattern on substrate and resist material mixture - Google Patents
Method of applying resist pattern on substrate and resist material mixtureInfo
- Publication number
- JPS57161743A JPS57161743A JP57035949A JP3594982A JPS57161743A JP S57161743 A JPS57161743 A JP S57161743A JP 57035949 A JP57035949 A JP 57035949A JP 3594982 A JP3594982 A JP 3594982A JP S57161743 A JPS57161743 A JP S57161743A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- material mixture
- substrate
- resist material
- applying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8101200A NL8101200A (nl) | 1981-03-12 | 1981-03-12 | Werkwijze voor het aanbrengen van een resistmateriaal op een drager en resist-materiaal. |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57161743A true JPS57161743A (en) | 1982-10-05 |
JPS64689B2 JPS64689B2 (ja) | 1989-01-09 |
Family
ID=19837149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57035949A Granted JPS57161743A (en) | 1981-03-12 | 1982-03-09 | Method of applying resist pattern on substrate and resist material mixture |
Country Status (6)
Country | Link |
---|---|
US (1) | US4405708A (ja) |
EP (1) | EP0060585B2 (ja) |
JP (1) | JPS57161743A (ja) |
AT (1) | ATE7546T1 (ja) |
DE (1) | DE3260160D1 (ja) |
NL (1) | NL8101200A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58116532A (ja) * | 1981-12-29 | 1983-07-11 | Fujitsu Ltd | パタ−ン形成方法 |
JPS6026337A (ja) * | 1983-07-22 | 1985-02-09 | Fujitsu Ltd | パタ−ン形成方法 |
JPS6070442A (ja) * | 1983-09-28 | 1985-04-22 | Fujitsu Ltd | パタ−ン形成方法 |
JPH08130213A (ja) * | 1994-11-01 | 1996-05-21 | Agency Of Ind Science & Technol | ポリマーの相分離を利用した表面加工法 |
US5955606A (en) * | 1995-09-14 | 1999-09-21 | Hyundai Electronics Industries Co., Ltd. | N-vinyllactam derivatives and polymer thereof |
JP2017126044A (ja) * | 2016-01-15 | 2017-07-20 | 富士フイルム株式会社 | 感光性組成物、硬化膜の製造方法、遮光膜、カラーフィルタおよび固体撮像素子 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
DE3248601A1 (de) * | 1982-12-30 | 1984-07-12 | Röhm GmbH, 6100 Darmstadt | Polymerisate mit geringer wasseraufnahme |
US4665009A (en) * | 1984-07-10 | 1987-05-12 | Hughes Aircraft Company | Method of developing radiation sensitive negative resists |
US4617085A (en) * | 1985-09-03 | 1986-10-14 | General Electric Company | Process for removing organic material in a patterned manner from an organic film |
US4869994A (en) * | 1988-01-25 | 1989-09-26 | Hoechst Celanese Corp. | Photoresist compositions based on hydroxystyrene copolymers |
US6114082A (en) | 1996-09-16 | 2000-09-05 | International Business Machines Corporation | Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same |
US6190829B1 (en) | 1996-09-16 | 2001-02-20 | International Business Machines Corporation | Low “K” factor hybrid photoresist |
US6218704B1 (en) | 1997-05-07 | 2001-04-17 | International Business Machines Corporation | ESD protection structure and method |
US5861330A (en) * | 1997-05-07 | 1999-01-19 | International Business Machines Corporation | Method and structure to reduce latch-up using edge implants |
US5882967A (en) * | 1997-05-07 | 1999-03-16 | International Business Machines Corporation | Process for buried diode formation in CMOS |
US5972570A (en) * | 1997-07-17 | 1999-10-26 | International Business Machines Corporation | Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby |
US5981148A (en) * | 1997-07-17 | 1999-11-09 | International Business Machines Corporation | Method for forming sidewall spacers using frequency doubling hybrid resist and device formed thereby |
US6184041B1 (en) | 1998-05-13 | 2001-02-06 | International Business Machines Corporation | Fused hybrid resist shapes as a means of modulating hybrid resist space width |
KR100314761B1 (ko) | 1999-03-03 | 2001-11-17 | 윤덕용 | 노르보르넨에 콜릭산, 디옥시콜릭산 또는 리소콜릭산 유도체를 결합시킨 단량체를 이용한 중합체 및 이를 함유하는 포토레지스트 조성물 |
KR100749494B1 (ko) | 2001-04-03 | 2007-08-14 | 삼성에스디아이 주식회사 | 화학증폭형 네가티브 포토레지스트용 중합체 및 포토레지스트 조성물 |
JP4893270B2 (ja) * | 2006-11-29 | 2012-03-07 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP2009048182A (ja) * | 2007-07-20 | 2009-03-05 | Fujifilm Corp | ポジ型レジスト組成物及びパターン形成方法 |
WO2009022681A1 (ja) * | 2007-08-10 | 2009-02-19 | Fujifilm Corporation | ポジ型レジスト組成物、該組成物を用いたパターン形成方法及び該組成物に用いられる化合物 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2892712A (en) * | 1954-04-23 | 1959-06-30 | Du Pont | Process for preparing relief images |
CA774047A (en) * | 1963-12-09 | 1967-12-19 | Shipley Company | Light-sensitive material and process for the development thereof |
US3900325A (en) * | 1972-06-12 | 1975-08-19 | Shipley Co | Light sensitive quinone diazide composition with n-3-oxohydrocarbon substituted acrylamide |
US3996393A (en) * | 1974-03-25 | 1976-12-07 | International Business Machines Corporation | Positive polymeric electron beam resists of very great sensitivity |
US4272603A (en) * | 1977-06-03 | 1981-06-09 | Chenevert Donald J | Resin blends for improved vesicular systems |
US4141733A (en) * | 1977-10-25 | 1979-02-27 | Eastman Kodak Company | Development of light-sensitive quinone diazide compositions |
-
1981
- 1981-03-12 NL NL8101200A patent/NL8101200A/nl not_active Application Discontinuation
-
1982
- 1982-02-26 EP EP82200242A patent/EP0060585B2/en not_active Expired
- 1982-02-26 DE DE8282200242T patent/DE3260160D1/de not_active Expired
- 1982-02-26 AT AT82200242T patent/ATE7546T1/de not_active IP Right Cessation
- 1982-03-08 US US06/355,977 patent/US4405708A/en not_active Expired - Fee Related
- 1982-03-09 JP JP57035949A patent/JPS57161743A/ja active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58116532A (ja) * | 1981-12-29 | 1983-07-11 | Fujitsu Ltd | パタ−ン形成方法 |
JPH0262859B2 (ja) * | 1981-12-29 | 1990-12-26 | Fujitsu Ltd | |
JPS6026337A (ja) * | 1983-07-22 | 1985-02-09 | Fujitsu Ltd | パタ−ン形成方法 |
JPS6070442A (ja) * | 1983-09-28 | 1985-04-22 | Fujitsu Ltd | パタ−ン形成方法 |
JPH0377989B2 (ja) * | 1983-09-28 | 1991-12-12 | Fujitsu Ltd | |
JPH08130213A (ja) * | 1994-11-01 | 1996-05-21 | Agency Of Ind Science & Technol | ポリマーの相分離を利用した表面加工法 |
US5955606A (en) * | 1995-09-14 | 1999-09-21 | Hyundai Electronics Industries Co., Ltd. | N-vinyllactam derivatives and polymer thereof |
JP2017126044A (ja) * | 2016-01-15 | 2017-07-20 | 富士フイルム株式会社 | 感光性組成物、硬化膜の製造方法、遮光膜、カラーフィルタおよび固体撮像素子 |
Also Published As
Publication number | Publication date |
---|---|
EP0060585B1 (en) | 1984-05-16 |
US4405708A (en) | 1983-09-20 |
JPS64689B2 (ja) | 1989-01-09 |
EP0060585A1 (en) | 1982-09-22 |
ATE7546T1 (de) | 1984-06-15 |
EP0060585B2 (en) | 1987-06-24 |
NL8101200A (nl) | 1982-10-01 |
DE3260160D1 (en) | 1984-06-20 |
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