JPS57157563A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57157563A
JPS57157563A JP4291681A JP4291681A JPS57157563A JP S57157563 A JPS57157563 A JP S57157563A JP 4291681 A JP4291681 A JP 4291681A JP 4291681 A JP4291681 A JP 4291681A JP S57157563 A JPS57157563 A JP S57157563A
Authority
JP
Japan
Prior art keywords
groove
film
junction
regions
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4291681A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0258785B2 (cs
Inventor
Masamichi Asano
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4291681A priority Critical patent/JPS57157563A/ja
Publication of JPS57157563A publication Critical patent/JPS57157563A/ja
Publication of JPH0258785B2 publication Critical patent/JPH0258785B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors

Landscapes

  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP4291681A 1981-03-24 1981-03-24 Semiconductor device Granted JPS57157563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4291681A JPS57157563A (en) 1981-03-24 1981-03-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4291681A JPS57157563A (en) 1981-03-24 1981-03-24 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60057712A Division JPS60242679A (ja) 1985-03-22 1985-03-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS57157563A true JPS57157563A (en) 1982-09-29
JPH0258785B2 JPH0258785B2 (cs) 1990-12-10

Family

ID=12649336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4291681A Granted JPS57157563A (en) 1981-03-24 1981-03-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57157563A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292477A (ja) * 1985-10-18 1987-04-27 Nec Corp 半導体記憶装置の製造方法
US4672221A (en) * 1982-11-01 1987-06-09 Tokyo Shibaura Denki Kabushiki Kaisha Photoelectric conversion element with light shielding conductive layer
JP2011233913A (ja) * 2011-07-04 2011-11-17 Getner Foundation Llc 不揮発性記憶装置及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672221A (en) * 1982-11-01 1987-06-09 Tokyo Shibaura Denki Kabushiki Kaisha Photoelectric conversion element with light shielding conductive layer
JPS6292477A (ja) * 1985-10-18 1987-04-27 Nec Corp 半導体記憶装置の製造方法
JP2011233913A (ja) * 2011-07-04 2011-11-17 Getner Foundation Llc 不揮発性記憶装置及びその製造方法

Also Published As

Publication number Publication date
JPH0258785B2 (cs) 1990-12-10

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