JPS57130468A - Insulating gate protecting semiconductor device - Google Patents

Insulating gate protecting semiconductor device

Info

Publication number
JPS57130468A
JPS57130468A JP56015741A JP1574181A JPS57130468A JP S57130468 A JPS57130468 A JP S57130468A JP 56015741 A JP56015741 A JP 56015741A JP 1574181 A JP1574181 A JP 1574181A JP S57130468 A JPS57130468 A JP S57130468A
Authority
JP
Japan
Prior art keywords
region
layer
electrode
gate
fetd1
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56015741A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6234155B2 (https=
Inventor
Isao Yoshida
Takeaki Okabe
Mineo Katsueda
Minoru Nagata
Manabu Matsuzawa
Hideshi Ito
Kazutoshi Ashikawa
Hideaki Kato
Mitsuo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56015741A priority Critical patent/JPS57130468A/ja
Publication of JPS57130468A publication Critical patent/JPS57130468A/ja
Publication of JPS6234155B2 publication Critical patent/JPS6234155B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP56015741A 1981-02-06 1981-02-06 Insulating gate protecting semiconductor device Granted JPS57130468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56015741A JPS57130468A (en) 1981-02-06 1981-02-06 Insulating gate protecting semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56015741A JPS57130468A (en) 1981-02-06 1981-02-06 Insulating gate protecting semiconductor device

Publications (2)

Publication Number Publication Date
JPS57130468A true JPS57130468A (en) 1982-08-12
JPS6234155B2 JPS6234155B2 (https=) 1987-07-24

Family

ID=11897180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56015741A Granted JPS57130468A (en) 1981-02-06 1981-02-06 Insulating gate protecting semiconductor device

Country Status (1)

Country Link
JP (1) JPS57130468A (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4710791A (en) * 1984-08-09 1987-12-01 Fujitsu Limited Protection device in an integrated circuit
JPS63213370A (ja) * 1987-02-28 1988-09-06 Nippon Denso Co Ltd 電力用トランジスタの保護回路
JPS63229757A (ja) * 1987-03-19 1988-09-26 Nippon Denso Co Ltd 半導体装置
JPH02128475A (ja) * 1988-11-08 1990-05-16 Nec Corp 電界効果トランジスタ
JPH0312970A (ja) * 1989-06-12 1991-01-21 Hitachi Ltd 半導体装置
US5248892A (en) * 1989-03-13 1993-09-28 U.S. Philips Corporation Semiconductor device provided with a protection circuit
US5389811A (en) * 1994-04-14 1995-02-14 Analog Devices, Incorporated Fault-protected overvoltage switch employing isolated transistor tubs
US5436483A (en) * 1983-12-26 1995-07-25 Hitachi, Ltd. Semiconductor integrated circuit device having a first MISFET of an output buffer circuit and a second MISFET of an internal circuit
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
JP2009245985A (ja) * 2008-03-28 2009-10-22 Sanken Electric Co Ltd 半導体装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436483A (en) * 1983-12-26 1995-07-25 Hitachi, Ltd. Semiconductor integrated circuit device having a first MISFET of an output buffer circuit and a second MISFET of an internal circuit
US5436484A (en) * 1983-12-26 1995-07-25 Hitachi, Ltd. Semiconductor integrated circuit device having input protective elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
US4710791A (en) * 1984-08-09 1987-12-01 Fujitsu Limited Protection device in an integrated circuit
JPS63213370A (ja) * 1987-02-28 1988-09-06 Nippon Denso Co Ltd 電力用トランジスタの保護回路
JPS63229757A (ja) * 1987-03-19 1988-09-26 Nippon Denso Co Ltd 半導体装置
JPH02128475A (ja) * 1988-11-08 1990-05-16 Nec Corp 電界効果トランジスタ
US5248892A (en) * 1989-03-13 1993-09-28 U.S. Philips Corporation Semiconductor device provided with a protection circuit
JPH0312970A (ja) * 1989-06-12 1991-01-21 Hitachi Ltd 半導体装置
US5389811A (en) * 1994-04-14 1995-02-14 Analog Devices, Incorporated Fault-protected overvoltage switch employing isolated transistor tubs
JP2009245985A (ja) * 2008-03-28 2009-10-22 Sanken Electric Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPS6234155B2 (https=) 1987-07-24

Similar Documents

Publication Publication Date Title
TW283263B (en) Fabrication method of semiconductor device and field effect transistor
JPS56169369A (en) High withstand voltage mos field effect semiconductor device
JPS57130468A (en) Insulating gate protecting semiconductor device
JPS56111258A (en) Thin film semiconductor device
JPS5638867A (en) Insulated gate type field effect transistor
EP0269008A3 (en) Semiconductor device with improved passivation film and process of fabrication thereof
JPS57208177A (en) Semiconductor negative resistance element
JPS56165359A (en) Semiconductor device
JPS5691470A (en) Semiconductor
JPS51128278A (en) Integrated circuit with resistance element
JPS6454762A (en) Insulated gate field effect transistor
JPS5769778A (en) Semiconductor device
JPS6433970A (en) Field effect semiconductor device
JPS5721824A (en) Manufacture of semiconductor device
JPS57102069A (en) Semiconductor device
JPS56108267A (en) Insulated-gate field-effect semiconductor device
JPS6417475A (en) Manufacture of mos semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS6450465A (en) Semiconductor device
JPS57188847A (en) Semiconductor device
JPS5772386A (en) Junction type field-effect semiconductor device
JPS54117691A (en) Production of insulating gate-type semiconductor device
JPS5736863A (en) Manufacture of semiconductor device
JPS56133871A (en) Mos field effect semiconductor device with high breakdown voltage
JPS5286086A (en) Field effect transistor