JPS6234155B2 - - Google Patents

Info

Publication number
JPS6234155B2
JPS6234155B2 JP56015741A JP1574181A JPS6234155B2 JP S6234155 B2 JPS6234155 B2 JP S6234155B2 JP 56015741 A JP56015741 A JP 56015741A JP 1574181 A JP1574181 A JP 1574181A JP S6234155 B2 JPS6234155 B2 JP S6234155B2
Authority
JP
Japan
Prior art keywords
layer
base
semiconductor device
gate protection
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56015741A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57130468A (en
Inventor
Isao Yoshida
Takeaki Okabe
Mineo Katsueda
Minoru Nagata
Manabu Matsuzawa
Hideshi Ito
Kazutoshi Ashikawa
Hideaki Kato
Mitsuo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56015741A priority Critical patent/JPS57130468A/ja
Publication of JPS57130468A publication Critical patent/JPS57130468A/ja
Publication of JPS6234155B2 publication Critical patent/JPS6234155B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP56015741A 1981-02-06 1981-02-06 Insulating gate protecting semiconductor device Granted JPS57130468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56015741A JPS57130468A (en) 1981-02-06 1981-02-06 Insulating gate protecting semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56015741A JPS57130468A (en) 1981-02-06 1981-02-06 Insulating gate protecting semiconductor device

Publications (2)

Publication Number Publication Date
JPS57130468A JPS57130468A (en) 1982-08-12
JPS6234155B2 true JPS6234155B2 (https=) 1987-07-24

Family

ID=11897180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56015741A Granted JPS57130468A (en) 1981-02-06 1981-02-06 Insulating gate protecting semiconductor device

Country Status (1)

Country Link
JP (1) JPS57130468A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
JPS6144454A (ja) * 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置
JPS63213370A (ja) * 1987-02-28 1988-09-06 Nippon Denso Co Ltd 電力用トランジスタの保護回路
JPH0834222B2 (ja) * 1987-03-19 1996-03-29 日本電装株式会社 半導体装置
JPH0793433B2 (ja) * 1988-11-08 1995-10-09 日本電気株式会社 電界効果トランジスタ
US5248892A (en) * 1989-03-13 1993-09-28 U.S. Philips Corporation Semiconductor device provided with a protection circuit
JPH0783125B2 (ja) * 1989-06-12 1995-09-06 株式会社日立製作所 半導体装置
US5389811A (en) * 1994-04-14 1995-02-14 Analog Devices, Incorporated Fault-protected overvoltage switch employing isolated transistor tubs
JP5272472B2 (ja) * 2008-03-28 2013-08-28 サンケン電気株式会社 半導体装置

Also Published As

Publication number Publication date
JPS57130468A (en) 1982-08-12

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