JPS57130461A - Semiconductor memory storage - Google Patents

Semiconductor memory storage

Info

Publication number
JPS57130461A
JPS57130461A JP56015733A JP1573381A JPS57130461A JP S57130461 A JPS57130461 A JP S57130461A JP 56015733 A JP56015733 A JP 56015733A JP 1573381 A JP1573381 A JP 1573381A JP S57130461 A JPS57130461 A JP S57130461A
Authority
JP
Japan
Prior art keywords
resistor
section
poly
gate
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56015733A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0410229B2 (enExample
Inventor
Noburo Tanimura
Norimasa Yasui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56015733A priority Critical patent/JPS57130461A/ja
Priority to US06/341,623 priority patent/US4554729A/en
Priority to FR8201073A priority patent/FR2499749B1/fr
Priority to GB8203074A priority patent/GB2092826B/en
Priority to IT19466/82A priority patent/IT1150181B/it
Priority to DE19823204039 priority patent/DE3204039A1/de
Publication of JPS57130461A publication Critical patent/JPS57130461A/ja
Priority to US06/783,959 priority patent/US4712192A/en
Priority to HK448/86A priority patent/HK44886A/xx
Priority to MY548/86A priority patent/MY8600548A/xx
Publication of JPH0410229B2 publication Critical patent/JPH0410229B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/082—Ion implantation FETs/COMs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
JP56015733A 1981-02-06 1981-02-06 Semiconductor memory storage Granted JPS57130461A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP56015733A JPS57130461A (en) 1981-02-06 1981-02-06 Semiconductor memory storage
US06/341,623 US4554729A (en) 1981-02-06 1982-01-22 Method of making semiconductor memory device
FR8201073A FR2499749B1 (fr) 1981-02-06 1982-01-25 Dispositif de memoire a semiconducteurs et procede de fabrication d'un tel dispositif
GB8203074A GB2092826B (en) 1981-02-06 1982-02-03 Semiconductor memory device and fabrication process thereof
IT19466/82A IT1150181B (it) 1981-02-06 1982-02-04 Dispositivo di memoria a semiconduttori e procedimento di fabbricazione di esso
DE19823204039 DE3204039A1 (de) 1981-02-06 1982-02-05 Halbleiterspeicheranordnung und verfahren zu ihrer herstellung
US06/783,959 US4712192A (en) 1981-02-06 1985-10-04 Semiconductor memory device and fabrication process thereof
HK448/86A HK44886A (en) 1981-02-06 1986-06-19 Semiconductor memory device and fabrication process thereof
MY548/86A MY8600548A (en) 1981-02-06 1986-12-30 Semiconductor memory device and fabrication process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56015733A JPS57130461A (en) 1981-02-06 1981-02-06 Semiconductor memory storage

Publications (2)

Publication Number Publication Date
JPS57130461A true JPS57130461A (en) 1982-08-12
JPH0410229B2 JPH0410229B2 (enExample) 1992-02-24

Family

ID=11896962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56015733A Granted JPS57130461A (en) 1981-02-06 1981-02-06 Semiconductor memory storage

Country Status (8)

Country Link
US (2) US4554729A (enExample)
JP (1) JPS57130461A (enExample)
DE (1) DE3204039A1 (enExample)
FR (1) FR2499749B1 (enExample)
GB (1) GB2092826B (enExample)
HK (1) HK44886A (enExample)
IT (1) IT1150181B (enExample)
MY (1) MY8600548A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132563A (ja) * 1984-07-25 1986-02-15 Hitachi Ltd 半導体集積回路装置
US4774203A (en) * 1985-10-25 1988-09-27 Hitachi, Ltd. Method for making static random-access memory device
US5107322A (en) * 1988-11-10 1992-04-21 Seiko Epson Corporation Wiring or conductor interconnect for a semiconductor device or the like
US5691559A (en) * 1988-11-10 1997-11-25 Seiko Epson Corporation Semiconductor devices with load elements
JP2007536731A (ja) * 2004-05-05 2007-12-13 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド フラッシュメモリ装置のワード線を保護するための方法および装置

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736844A (en) * 1980-08-15 1982-02-27 Hitachi Ltd Semiconductor device
JPS59107555A (ja) * 1982-12-03 1984-06-21 Fujitsu Ltd 半導体装置
US4633572A (en) * 1983-02-22 1987-01-06 General Motors Corporation Programming power paths in an IC by combined depletion and enhancement implants
JPS60116167A (ja) * 1983-11-29 1985-06-22 Toshiba Corp 半導体記憶装置及びその製造方法
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
KR930007195B1 (ko) * 1984-05-23 1993-07-31 가부시끼가이샤 히다찌세이사꾸쇼 반도체 장치와 그 제조 방법
US5352620A (en) * 1984-05-23 1994-10-04 Hitachi, Ltd. Method of making semiconductor device with memory cells and peripheral transistors
US4670091A (en) * 1984-08-23 1987-06-02 Fairchild Semiconductor Corporation Process for forming vias on integrated circuits
KR940002772B1 (ko) * 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치 및 그 제조방법
US4830976A (en) * 1984-10-01 1989-05-16 American Telephone And Telegraph Company, At&T Bell Laboratories Integrated circuit resistor
KR940006668B1 (ko) * 1984-11-22 1994-07-25 가부시끼가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치의 제조방법
GB2172744B (en) * 1985-03-23 1989-07-19 Stc Plc Semiconductor devices
JPS61263254A (ja) * 1985-05-17 1986-11-21 Nec Corp 入力保護装置
US4774202A (en) * 1985-11-07 1988-09-27 Sprague Electric Company Memory device with interconnected polysilicon layers and method for making
JPS63305545A (ja) * 1987-06-05 1988-12-13 Hitachi Ltd 半導体集積回路装置
US4843027A (en) * 1987-08-21 1989-06-27 Siliconix Incorporated Method of fabricating a high value semiconductor resistor
US4984200A (en) * 1987-11-30 1991-01-08 Hitachi, Ltd. Semiconductor circuit device having a plurality of SRAM type memory cell arrangement
US5014242A (en) * 1987-12-10 1991-05-07 Hitachi, Ltd. Semiconductor device for a ram disposed on chip so as to minimize distances of signal paths between the logic circuits and memory circuit
US4830974A (en) * 1988-01-11 1989-05-16 Atmel Corporation EPROM fabrication process
US4833096A (en) * 1988-01-19 1989-05-23 Atmel Corporation EEPROM fabrication process
US5153144A (en) * 1988-05-10 1992-10-06 Hitachi, Ltd. Method of making tunnel EEPROM
US5445980A (en) 1988-05-10 1995-08-29 Hitachi, Ltd. Method of making a semiconductor memory device
US4859619A (en) * 1988-07-15 1989-08-22 Atmel Corporation EPROM fabrication process forming tub regions for high voltage devices
US5196233A (en) * 1989-01-18 1993-03-23 Sgs-Thomson Microelectronics, Inc. Method for fabricating semiconductor circuits
US5151387A (en) 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
JP3266644B2 (ja) * 1991-04-08 2002-03-18 テキサス インスツルメンツ インコーポレイテツド ゲートアレイ装置
US5275962A (en) * 1991-04-08 1994-01-04 Texas Instruments Incorporated Mask programmable gate array base cell
TW208088B (enExample) * 1991-05-16 1993-06-21 American Telephone & Telegraph
US5187114A (en) * 1991-06-03 1993-02-16 Sgs-Thomson Microelectronics, Inc. Method of making SRAM cell and structure with polycrystalline P-channel load devices
US5204279A (en) * 1991-06-03 1993-04-20 Sgs-Thomson Microelectronics, Inc. Method of making SRAM cell and structure with polycrystalline p-channel load devices
JP2853426B2 (ja) * 1991-12-20 1999-02-03 日本電気株式会社 半導体記憶装置の製造方法
US5880022A (en) * 1991-12-30 1999-03-09 Lucent Technologies Inc. Self-aligned contact window
FR2690786A1 (fr) * 1992-04-30 1993-10-29 Sgs Thomson Microelectronics Sa Dispositif de protection d'un circuit intégré contre les décharges électrostatiques.
US5354704A (en) * 1993-07-28 1994-10-11 United Microelectronics Corporation Symmetric SRAM cell with buried N+ local interconnection line
JP3110262B2 (ja) * 1993-11-15 2000-11-20 松下電器産業株式会社 半導体装置及び半導体装置のオペレーティング方法
JP2689888B2 (ja) * 1993-12-30 1997-12-10 日本電気株式会社 半導体装置及びその製造方法
JPH09260510A (ja) * 1996-01-17 1997-10-03 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6140684A (en) * 1997-06-24 2000-10-31 Stmicroelectronic, Inc. SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers
JP3540190B2 (ja) * 1999-03-15 2004-07-07 日本電気株式会社 半導体記憶装置
US7512509B2 (en) * 2007-04-26 2009-03-31 International Business Machines Corporation M1 testable addressable array for device parameter characterization
JP5274878B2 (ja) * 2008-04-15 2013-08-28 パナソニック株式会社 半導体装置及びその製造方法
JP2011091188A (ja) * 2009-10-22 2011-05-06 Sanyo Electric Co Ltd 半導体装置の製造方法
KR101896412B1 (ko) * 2011-08-01 2018-09-07 페어차일드코리아반도체 주식회사 폴리 실리콘 저항, 이를 포함하는 기준 전압 회로, 및 폴리 실리콘 저항 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376679A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element
DE2751481C2 (de) * 1976-11-22 1986-10-23 Mostek Corp. (n.d.Ges.d.Staates Delaware), Carrollton, Tex. Lastimpedanz für eine statische Halbleiterspeicherzelle
US4167804A (en) * 1976-12-13 1979-09-18 General Motors Corporation Integrated circuit process compatible surge protection resistor
US4139785A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static memory cell with inverted field effect transistor
US4240097A (en) * 1977-05-31 1980-12-16 Texas Instruments Incorporated Field-effect transistor structure in multilevel polycrystalline silicon
US4209716A (en) * 1977-05-31 1980-06-24 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in second-level polycrystalline silicon layer
JPS5910581B2 (ja) * 1977-12-01 1984-03-09 富士通株式会社 半導体装置の製造方法
US4408385A (en) * 1978-06-15 1983-10-11 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
US4198695A (en) * 1978-07-19 1980-04-15 Texas Instruments Incorporated Static semiconductor memory cell using data lines for voltage supply
US4246593A (en) * 1979-01-02 1981-01-20 Texas Instruments Incorporated High density static memory cell with polysilicon resistors
JPS6055988B2 (ja) * 1979-01-26 1985-12-07 株式会社日立製作所 半導体装置の製法
US4475964A (en) * 1979-02-20 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Method of manufacturing a semiconductor device
US4370798A (en) * 1979-06-15 1983-02-01 Texas Instruments Incorporated Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon
US4397077A (en) * 1981-12-16 1983-08-09 Inmos Corporation Method of fabricating self-aligned MOS devices and independently formed gate dielectrics and insulating layers
US4651409A (en) * 1984-02-09 1987-03-24 Ncr Corporation Method of fabricating a high density, low power, merged vertical fuse/bipolar transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376679A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132563A (ja) * 1984-07-25 1986-02-15 Hitachi Ltd 半導体集積回路装置
US4774203A (en) * 1985-10-25 1988-09-27 Hitachi, Ltd. Method for making static random-access memory device
US5107322A (en) * 1988-11-10 1992-04-21 Seiko Epson Corporation Wiring or conductor interconnect for a semiconductor device or the like
US5691559A (en) * 1988-11-10 1997-11-25 Seiko Epson Corporation Semiconductor devices with load elements
JP2007536731A (ja) * 2004-05-05 2007-12-13 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド フラッシュメモリ装置のワード線を保護するための方法および装置
JP2012033963A (ja) * 2004-05-05 2012-02-16 Spansion Llc フラッシュメモリアレイのワード線構造を保護するためのワード線保護装置およびフラッシュメモリアレイのためのワード線構造

Also Published As

Publication number Publication date
GB2092826A (en) 1982-08-18
HK44886A (en) 1986-06-27
FR2499749B1 (fr) 1986-01-24
JPH0410229B2 (enExample) 1992-02-24
IT8219466A0 (it) 1982-02-04
GB2092826B (en) 1985-01-09
IT1150181B (it) 1986-12-10
DE3204039A1 (de) 1982-08-26
MY8600548A (en) 1986-12-31
US4712192A (en) 1987-12-08
FR2499749A1 (fr) 1982-08-13
US4554729A (en) 1985-11-26

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