HK44886A - Semiconductor memory device and fabrication process thereof - Google Patents
Semiconductor memory device and fabrication process thereofInfo
- Publication number
- HK44886A HK44886A HK448/86A HK44886A HK44886A HK 44886 A HK44886 A HK 44886A HK 448/86 A HK448/86 A HK 448/86A HK 44886 A HK44886 A HK 44886A HK 44886 A HK44886 A HK 44886A
- Authority
- HK
- Hong Kong
- Prior art keywords
- memory device
- semiconductor memory
- fabrication process
- fabrication
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/082—Ion implantation FETs/COMs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56015733A JPS57130461A (en) | 1981-02-06 | 1981-02-06 | Semiconductor memory storage |
Publications (1)
Publication Number | Publication Date |
---|---|
HK44886A true HK44886A (en) | 1986-06-27 |
Family
ID=11896962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK448/86A HK44886A (en) | 1981-02-06 | 1986-06-19 | Semiconductor memory device and fabrication process thereof |
Country Status (8)
Country | Link |
---|---|
US (2) | US4554729A (xx) |
JP (1) | JPS57130461A (xx) |
DE (1) | DE3204039A1 (xx) |
FR (1) | FR2499749B1 (xx) |
GB (1) | GB2092826B (xx) |
HK (1) | HK44886A (xx) |
IT (1) | IT1150181B (xx) |
MY (1) | MY8600548A (xx) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5736844A (en) * | 1980-08-15 | 1982-02-27 | Hitachi Ltd | Semiconductor device |
JPS59107555A (ja) * | 1982-12-03 | 1984-06-21 | Fujitsu Ltd | 半導体装置 |
US4633572A (en) * | 1983-02-22 | 1987-01-06 | General Motors Corporation | Programming power paths in an IC by combined depletion and enhancement implants |
JPS60116167A (ja) * | 1983-11-29 | 1985-06-22 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
US5610089A (en) * | 1983-12-26 | 1997-03-11 | Hitachi, Ltd. | Method of fabrication of semiconductor integrated circuit device |
US5276346A (en) * | 1983-12-26 | 1994-01-04 | Hitachi, Ltd. | Semiconductor integrated circuit device having protective/output elements and internal circuits |
US5352620A (en) * | 1984-05-23 | 1994-10-04 | Hitachi, Ltd. | Method of making semiconductor device with memory cells and peripheral transistors |
US4663645A (en) * | 1984-05-23 | 1987-05-05 | Hitachi, Ltd. | Semiconductor device of an LDD structure having a floating gate |
JPH0691195B2 (ja) * | 1984-07-25 | 1994-11-14 | 株式会社日立製作所 | 半導体集積回路装置 |
US4670091A (en) * | 1984-08-23 | 1987-06-02 | Fairchild Semiconductor Corporation | Process for forming vias on integrated circuits |
KR940002772B1 (ko) * | 1984-08-31 | 1994-04-02 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 집적회로 장치 및 그 제조방법 |
US4830976A (en) * | 1984-10-01 | 1989-05-16 | American Telephone And Telegraph Company, At&T Bell Laboratories | Integrated circuit resistor |
KR940006668B1 (ko) * | 1984-11-22 | 1994-07-25 | 가부시끼가이샤 히다찌세이사꾸쇼 | 반도체 집적회로 장치의 제조방법 |
GB2172744B (en) * | 1985-03-23 | 1989-07-19 | Stc Plc | Semiconductor devices |
JPS61263254A (ja) * | 1985-05-17 | 1986-11-21 | Nec Corp | 入力保護装置 |
US4774203A (en) * | 1985-10-25 | 1988-09-27 | Hitachi, Ltd. | Method for making static random-access memory device |
US4774202A (en) * | 1985-11-07 | 1988-09-27 | Sprague Electric Company | Memory device with interconnected polysilicon layers and method for making |
JPS63305545A (ja) * | 1987-06-05 | 1988-12-13 | Hitachi Ltd | 半導体集積回路装置 |
US4843027A (en) * | 1987-08-21 | 1989-06-27 | Siliconix Incorporated | Method of fabricating a high value semiconductor resistor |
US4984200A (en) * | 1987-11-30 | 1991-01-08 | Hitachi, Ltd. | Semiconductor circuit device having a plurality of SRAM type memory cell arrangement |
US5014242A (en) * | 1987-12-10 | 1991-05-07 | Hitachi, Ltd. | Semiconductor device for a ram disposed on chip so as to minimize distances of signal paths between the logic circuits and memory circuit |
US4830974A (en) * | 1988-01-11 | 1989-05-16 | Atmel Corporation | EPROM fabrication process |
US4833096A (en) * | 1988-01-19 | 1989-05-23 | Atmel Corporation | EEPROM fabrication process |
US5445980A (en) * | 1988-05-10 | 1995-08-29 | Hitachi, Ltd. | Method of making a semiconductor memory device |
US5153144A (en) * | 1988-05-10 | 1992-10-06 | Hitachi, Ltd. | Method of making tunnel EEPROM |
US4859619A (en) * | 1988-07-15 | 1989-08-22 | Atmel Corporation | EPROM fabrication process forming tub regions for high voltage devices |
JP2829992B2 (ja) * | 1988-11-10 | 1998-12-02 | セイコーエプソン株式会社 | 半導体装置 |
US5349206A (en) * | 1988-11-10 | 1994-09-20 | Seiko Epson Corporation | Integrated memory circuit with high density load elements |
US5196233A (en) * | 1989-01-18 | 1993-03-23 | Sgs-Thomson Microelectronics, Inc. | Method for fabricating semiconductor circuits |
US5151387A (en) | 1990-04-30 | 1992-09-29 | Sgs-Thomson Microelectronics, Inc. | Polycrystalline silicon contact structure |
JP3266644B2 (ja) * | 1991-04-08 | 2002-03-18 | テキサス インスツルメンツ インコーポレイテツド | ゲートアレイ装置 |
US5275962A (en) * | 1991-04-08 | 1994-01-04 | Texas Instruments Incorporated | Mask programmable gate array base cell |
TW208088B (xx) * | 1991-05-16 | 1993-06-21 | American Telephone & Telegraph | |
US5204279A (en) * | 1991-06-03 | 1993-04-20 | Sgs-Thomson Microelectronics, Inc. | Method of making SRAM cell and structure with polycrystalline p-channel load devices |
US5187114A (en) * | 1991-06-03 | 1993-02-16 | Sgs-Thomson Microelectronics, Inc. | Method of making SRAM cell and structure with polycrystalline P-channel load devices |
JP2853426B2 (ja) * | 1991-12-20 | 1999-02-03 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
US5880022A (en) * | 1991-12-30 | 1999-03-09 | Lucent Technologies Inc. | Self-aligned contact window |
FR2690786A1 (fr) * | 1992-04-30 | 1993-10-29 | Sgs Thomson Microelectronics Sa | Dispositif de protection d'un circuit intégré contre les décharges électrostatiques. |
US5354704A (en) * | 1993-07-28 | 1994-10-11 | United Microelectronics Corporation | Symmetric SRAM cell with buried N+ local interconnection line |
JP3110262B2 (ja) * | 1993-11-15 | 2000-11-20 | 松下電器産業株式会社 | 半導体装置及び半導体装置のオペレーティング方法 |
JP2689888B2 (ja) * | 1993-12-30 | 1997-12-10 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JPH09260510A (ja) * | 1996-01-17 | 1997-10-03 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US6140684A (en) * | 1997-06-24 | 2000-10-31 | Stmicroelectronic, Inc. | SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers |
JP3540190B2 (ja) * | 1999-03-15 | 2004-07-07 | 日本電気株式会社 | 半導体記憶装置 |
US7160773B2 (en) * | 2004-05-05 | 2007-01-09 | Spansion Llc | Methods and apparatus for wordline protection in flash memory devices |
US7512509B2 (en) * | 2007-04-26 | 2009-03-31 | International Business Machines Corporation | M1 testable addressable array for device parameter characterization |
JP5274878B2 (ja) * | 2008-04-15 | 2013-08-28 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP2011091188A (ja) * | 2009-10-22 | 2011-05-06 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
KR101896412B1 (ko) * | 2011-08-01 | 2018-09-07 | 페어차일드코리아반도체 주식회사 | 폴리 실리콘 저항, 이를 포함하는 기준 전압 회로, 및 폴리 실리콘 저항 제조 방법 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
US3967295A (en) * | 1975-04-03 | 1976-06-29 | Rca Corporation | Input transient protection for integrated circuit element |
DE2751481C2 (de) * | 1976-11-22 | 1986-10-23 | Mostek Corp. (n.d.Ges.d.Staates Delaware), Carrollton, Tex. | Lastimpedanz für eine statische Halbleiterspeicherzelle |
US4167804A (en) * | 1976-12-13 | 1979-09-18 | General Motors Corporation | Integrated circuit process compatible surge protection resistor |
JPS5376679A (en) * | 1976-12-17 | 1978-07-07 | Nec Corp | Semiconductor device |
US4240097A (en) * | 1977-05-31 | 1980-12-16 | Texas Instruments Incorporated | Field-effect transistor structure in multilevel polycrystalline silicon |
US4209716A (en) * | 1977-05-31 | 1980-06-24 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in second-level polycrystalline silicon layer |
US4139785A (en) * | 1977-05-31 | 1979-02-13 | Texas Instruments Incorporated | Static memory cell with inverted field effect transistor |
JPS5910581B2 (ja) * | 1977-12-01 | 1984-03-09 | 富士通株式会社 | 半導体装置の製造方法 |
US4408385A (en) * | 1978-06-15 | 1983-10-11 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer |
US4198695A (en) * | 1978-07-19 | 1980-04-15 | Texas Instruments Incorporated | Static semiconductor memory cell using data lines for voltage supply |
US4246593A (en) * | 1979-01-02 | 1981-01-20 | Texas Instruments Incorporated | High density static memory cell with polysilicon resistors |
JPS6055988B2 (ja) * | 1979-01-26 | 1985-12-07 | 株式会社日立製作所 | 半導体装置の製法 |
US4475964A (en) * | 1979-02-20 | 1984-10-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device |
US4370798A (en) * | 1979-06-15 | 1983-02-01 | Texas Instruments Incorporated | Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon |
US4397077A (en) * | 1981-12-16 | 1983-08-09 | Inmos Corporation | Method of fabricating self-aligned MOS devices and independently formed gate dielectrics and insulating layers |
US4651409A (en) * | 1984-02-09 | 1987-03-24 | Ncr Corporation | Method of fabricating a high density, low power, merged vertical fuse/bipolar transistor |
-
1981
- 1981-02-06 JP JP56015733A patent/JPS57130461A/ja active Granted
-
1982
- 1982-01-22 US US06/341,623 patent/US4554729A/en not_active Expired - Lifetime
- 1982-01-25 FR FR8201073A patent/FR2499749B1/fr not_active Expired
- 1982-02-03 GB GB8203074A patent/GB2092826B/en not_active Expired
- 1982-02-04 IT IT19466/82A patent/IT1150181B/it active
- 1982-02-05 DE DE19823204039 patent/DE3204039A1/de not_active Withdrawn
-
1985
- 1985-10-04 US US06/783,959 patent/US4712192A/en not_active Expired - Lifetime
-
1986
- 1986-06-19 HK HK448/86A patent/HK44886A/xx not_active IP Right Cessation
- 1986-12-30 MY MY548/86A patent/MY8600548A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
JPH0410229B2 (xx) | 1992-02-24 |
US4712192A (en) | 1987-12-08 |
GB2092826B (en) | 1985-01-09 |
GB2092826A (en) | 1982-08-18 |
FR2499749B1 (fr) | 1986-01-24 |
JPS57130461A (en) | 1982-08-12 |
IT8219466A0 (it) | 1982-02-04 |
DE3204039A1 (de) | 1982-08-26 |
MY8600548A (en) | 1986-12-31 |
IT1150181B (it) | 1986-12-10 |
FR2499749A1 (fr) | 1982-08-13 |
US4554729A (en) | 1985-11-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE | Patent expired |