JPS57105897A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS57105897A
JPS57105897A JP55182292A JP18229280A JPS57105897A JP S57105897 A JPS57105897 A JP S57105897A JP 55182292 A JP55182292 A JP 55182292A JP 18229280 A JP18229280 A JP 18229280A JP S57105897 A JPS57105897 A JP S57105897A
Authority
JP
Japan
Prior art keywords
blocks
circuit
memory cell
test
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55182292A
Other languages
English (en)
Other versions
JPS6322000B2 (ja
Inventor
Takeo Tatematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55182292A priority Critical patent/JPS57105897A/ja
Priority to US06/329,942 priority patent/US4464750A/en
Priority to EP81306047A priority patent/EP0055129B1/en
Priority to DE8181306047T priority patent/DE3177183D1/de
Priority to IE3035/81A priority patent/IE56146B1/en
Publication of JPS57105897A publication Critical patent/JPS57105897A/ja
Publication of JPS6322000B2 publication Critical patent/JPS6322000B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
JP55182292A 1980-12-23 1980-12-23 Semiconductor storage device Granted JPS57105897A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP55182292A JPS57105897A (en) 1980-12-23 1980-12-23 Semiconductor storage device
US06/329,942 US4464750A (en) 1980-12-23 1981-12-11 Semiconductor memory device
EP81306047A EP0055129B1 (en) 1980-12-23 1981-12-22 Semiconductor memory device
DE8181306047T DE3177183D1 (de) 1980-12-23 1981-12-22 Halbleiterspeichergeraet.
IE3035/81A IE56146B1 (en) 1980-12-23 1981-12-22 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55182292A JPS57105897A (en) 1980-12-23 1980-12-23 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS57105897A true JPS57105897A (en) 1982-07-01
JPS6322000B2 JPS6322000B2 (ja) 1988-05-10

Family

ID=16115725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55182292A Granted JPS57105897A (en) 1980-12-23 1980-12-23 Semiconductor storage device

Country Status (5)

Country Link
US (1) US4464750A (ja)
EP (1) EP0055129B1 (ja)
JP (1) JPS57105897A (ja)
DE (1) DE3177183D1 (ja)
IE (1) IE56146B1 (ja)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175095A (ja) * 1983-03-22 1984-10-03 Mitsubishi Electric Corp 半導体メモリ
JPS59175093A (ja) * 1983-03-22 1984-10-03 Mitsubishi Electric Corp 半導体メモリ
JPS59175094A (ja) * 1983-03-22 1984-10-03 Mitsubishi Electric Corp 半導体メモリ
JPS6015899A (ja) * 1983-07-08 1985-01-26 Hitachi Micro Comput Eng Ltd 記憶装置
JPS6151700A (ja) * 1984-08-22 1986-03-14 Hitachi Ltd 半導体記憶装置
JPS6159699A (ja) * 1984-08-30 1986-03-27 Mitsubishi Electric Corp 半導体記憶装置
JPS6159700A (ja) * 1984-08-30 1986-03-27 Mitsubishi Electric Corp 半導体記憶装置
JPS6262500A (ja) * 1985-09-11 1987-03-19 シ−メンス、アクチエンゲゼルシヤフト 集積半導体メモリ
JPS62202396A (ja) * 1986-02-28 1987-09-07 Toshiba Corp スタテイツク型メモリ
JPH04212799A (ja) * 1990-01-31 1992-08-04 Nec Ic Microcomput Syst Ltd テスト回路内蔵半導体メモリ
US6584013B2 (en) * 2001-04-25 2003-06-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having increased memory capacity while reducing mounting area and stand-by current
JP2004530243A (ja) * 2001-03-30 2004-09-30 インテル・コーポレーション メモリセルの構造試験
JP2006066041A (ja) * 2004-08-30 2006-03-09 Oki Electric Ind Co Ltd メモリテスト回路
JP2013225301A (ja) * 2012-03-22 2013-10-31 Ricoh Co Ltd 制御装置、画像形成装置及び判定方法

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3379354D1 (en) * 1983-05-25 1989-04-13 Ibm Deutschland Test and diagnostic device for a digital computer
JPS60115099A (ja) * 1983-11-25 1985-06-21 Fujitsu Ltd 半導体記憶装置
JPS60205895A (ja) * 1984-03-30 1985-10-17 Fujitsu Ltd 半導体記憶装置
JPS60261148A (ja) * 1984-06-07 1985-12-24 Mitsubishi Electric Corp 半導体装置
US4670878A (en) * 1984-08-14 1987-06-02 Texas Instruments Incorporated Column shift circuitry for high speed testing of semiconductor memory devices
DE3583493D1 (de) * 1984-12-28 1991-08-22 Siemens Ag Integrierter halbleiterspeicher.
JP2508629B2 (ja) * 1985-02-28 1996-06-19 日本電気株式会社 半導体メモリ
US4814646A (en) * 1985-03-22 1989-03-21 Monolithic Memories, Inc. Programmable logic array using emitter-coupled logic
US4669082A (en) * 1985-05-09 1987-05-26 Halliburton Company Method of testing and addressing a magnetic core memory
US4686456A (en) * 1985-06-18 1987-08-11 Kabushiki Kaisha Toshiba Memory test circuit
DE3773773D1 (de) * 1986-06-25 1991-11-21 Nec Corp Pruefschaltung fuer eine speichereinrichtung mit willkuerlichem zugriff.
JPS6337894A (ja) * 1986-07-30 1988-02-18 Mitsubishi Electric Corp ランダムアクセスメモリ
US5293598A (en) * 1986-07-30 1994-03-08 Mitsubishi Denki Kabushiki Kaisha Random access memory with a plurality of amplifier groups
JPH0828115B2 (ja) * 1986-11-10 1996-03-21 日本電気株式会社 半導体メモリ装置
JP2523586B2 (ja) * 1987-02-27 1996-08-14 株式会社日立製作所 半導体記憶装置
US4801869A (en) * 1987-04-27 1989-01-31 International Business Machines Corporation Semiconductor defect monitor for diagnosing processing-induced defects
US4782486A (en) * 1987-05-14 1988-11-01 Digital Equipment Corporation Self-testing memory
JPH01175056A (ja) * 1987-12-28 1989-07-11 Toshiba Corp プログラム転送方式
US5051995A (en) * 1988-03-14 1991-09-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having a test mode setting circuit
US5263143A (en) * 1988-07-11 1993-11-16 Star Semiconductor Corporation Real time probe device for internals of signal processor
US5287511A (en) * 1988-07-11 1994-02-15 Star Semiconductor Corporation Architectures and methods for dividing processing tasks into tasks for a programmable real time signal processor and tasks for a decision making microprocessor interfacing therewith
JPH0271707U (ja) * 1988-11-21 1990-05-31
KR910005306B1 (ko) * 1988-12-31 1991-07-24 삼성전자 주식회사 고밀도 메모리의 테스트를 위한 병렬리드회로
JP2780354B2 (ja) * 1989-07-04 1998-07-30 富士通株式会社 半導体メモリ装置
JP2717712B2 (ja) * 1989-08-18 1998-02-25 三菱電機株式会社 半導体記憶装置
JPH0752597B2 (ja) * 1989-10-30 1995-06-05 三菱電機株式会社 半導体メモリ装置
JP2838425B2 (ja) * 1990-01-08 1998-12-16 三菱電機株式会社 半導体記憶装置
US5301155A (en) * 1990-03-20 1994-04-05 Mitsubishi Denki Kabushiki Kaisha Multiblock semiconduction storage device including simultaneous operation of a plurality of block defect determination circuits
GB2243466A (en) * 1990-03-31 1991-10-30 Motorola Gmbh Memory error detection
JP3133063B2 (ja) * 1990-05-10 2001-02-05 シーメンス アクチエンゲゼルシヤフト 並列検査可能性および冗長方法を有する集積半導体メモリ
US5675544A (en) * 1990-06-25 1997-10-07 Texas Instruments Incorporated Method and apparatus for parallel testing of memory circuits
JP2647546B2 (ja) * 1990-10-11 1997-08-27 シャープ株式会社 半導体記憶装置のテスト方法
US5457696A (en) * 1991-08-08 1995-10-10 Matsushita Electric Industrial Co., Ltd. Semiconductor memory having internal test circuit
US5751728A (en) * 1991-11-12 1998-05-12 Nec Corporation Semiconductor memory IC testing device
JPH0684396A (ja) * 1992-04-27 1994-03-25 Nec Corp 半導体記憶装置
JPH06275100A (ja) * 1993-03-19 1994-09-30 Fujitsu Ltd 半導体記憶装置
US6037123A (en) 1995-09-15 2000-03-14 Microcide Pharmaceuticals, Inc. Methods of screening for compounds active on Staphylococcus aureus target genes
US6009026A (en) * 1997-07-28 1999-12-28 International Business Machines Corporation Compressed input/output test mode
USRE40172E1 (en) * 1998-05-25 2008-03-25 Hynix Semiconductor, Inc. Multi-bank testing apparatus for a synchronous dram
JP2002367400A (ja) * 2001-06-08 2002-12-20 Mitsubishi Electric Corp 半導体集積回路装置
DE102004052594B3 (de) * 2004-10-29 2006-05-04 Infineon Technologies Ag Integrierter Halbleiterspeicher

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147924A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Memory unit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2246023B1 (ja) * 1973-09-05 1976-10-01 Honeywell Bull Soc Ind
US3995215A (en) * 1974-06-26 1976-11-30 International Business Machines Corporation Test technique for semiconductor memory array
US4055754A (en) * 1975-12-22 1977-10-25 Chesley Gilman D Memory device and method of testing the same
JPS5622278A (en) * 1979-07-27 1981-03-02 Fujitsu Ltd Decoder selection system
US4334307A (en) * 1979-12-28 1982-06-08 Honeywell Information Systems Inc. Data processing system with self testing and configuration mapping capability
US4281398A (en) * 1980-02-12 1981-07-28 Mostek Corporation Block redundancy for memory array

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147924A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Memory unit

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0325872B2 (ja) * 1983-03-22 1991-04-09 Mitsubishi Electric Corp
JPS59175093A (ja) * 1983-03-22 1984-10-03 Mitsubishi Electric Corp 半導体メモリ
JPS59175094A (ja) * 1983-03-22 1984-10-03 Mitsubishi Electric Corp 半導体メモリ
JPS59175095A (ja) * 1983-03-22 1984-10-03 Mitsubishi Electric Corp 半導体メモリ
JPS6015899A (ja) * 1983-07-08 1985-01-26 Hitachi Micro Comput Eng Ltd 記憶装置
JPS6151700A (ja) * 1984-08-22 1986-03-14 Hitachi Ltd 半導体記憶装置
JPS6159699A (ja) * 1984-08-30 1986-03-27 Mitsubishi Electric Corp 半導体記憶装置
JPS6159700A (ja) * 1984-08-30 1986-03-27 Mitsubishi Electric Corp 半導体記憶装置
JPS6262500A (ja) * 1985-09-11 1987-03-19 シ−メンス、アクチエンゲゼルシヤフト 集積半導体メモリ
JPS62202396A (ja) * 1986-02-28 1987-09-07 Toshiba Corp スタテイツク型メモリ
JPH04212799A (ja) * 1990-01-31 1992-08-04 Nec Ic Microcomput Syst Ltd テスト回路内蔵半導体メモリ
US5260906A (en) * 1990-01-31 1993-11-09 Nec Corporation Semiconductor memory having built-in test circuit
JP2004530243A (ja) * 2001-03-30 2004-09-30 インテル・コーポレーション メモリセルの構造試験
US6584013B2 (en) * 2001-04-25 2003-06-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having increased memory capacity while reducing mounting area and stand-by current
JP2006066041A (ja) * 2004-08-30 2006-03-09 Oki Electric Ind Co Ltd メモリテスト回路
JP4627644B2 (ja) * 2004-08-30 2011-02-09 Ｏｋｉセミコンダクタ株式会社 メモリテスト回路
JP2013225301A (ja) * 2012-03-22 2013-10-31 Ricoh Co Ltd 制御装置、画像形成装置及び判定方法

Also Published As

Publication number Publication date
EP0055129A3 (en) 1984-07-04
JPS6322000B2 (ja) 1988-05-10
US4464750A (en) 1984-08-07
IE813035L (en) 1982-06-23
EP0055129A2 (en) 1982-06-30
DE3177183D1 (de) 1990-06-21
EP0055129B1 (en) 1990-05-16
IE56146B1 (en) 1991-05-08

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