JPS5691477A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPS5691477A
JPS5691477A JP16867279A JP16867279A JPS5691477A JP S5691477 A JPS5691477 A JP S5691477A JP 16867279 A JP16867279 A JP 16867279A JP 16867279 A JP16867279 A JP 16867279A JP S5691477 A JPS5691477 A JP S5691477A
Authority
JP
Japan
Prior art keywords
layer
electrode
active layer
center
series resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16867279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6253953B2 (en, 2012
Inventor
Hideaki Kozu
Akira Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16867279A priority Critical patent/JPS5691477A/ja
Publication of JPS5691477A publication Critical patent/JPS5691477A/ja
Publication of JPS6253953B2 publication Critical patent/JPS6253953B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP16867279A 1979-12-25 1979-12-25 Semiconductor Granted JPS5691477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16867279A JPS5691477A (en) 1979-12-25 1979-12-25 Semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16867279A JPS5691477A (en) 1979-12-25 1979-12-25 Semiconductor

Publications (2)

Publication Number Publication Date
JPS5691477A true JPS5691477A (en) 1981-07-24
JPS6253953B2 JPS6253953B2 (en, 2012) 1987-11-12

Family

ID=15872344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16867279A Granted JPS5691477A (en) 1979-12-25 1979-12-25 Semiconductor

Country Status (1)

Country Link
JP (1) JPS5691477A (en, 2012)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027170A (en) * 1988-09-30 1991-06-25 Sumitomo Electric Industries, Ltd. Semiconductor device MESFET with upper and lower layers
WO1991013466A1 (en) * 1990-02-20 1991-09-05 Varian Associates, Inc. High electron mobility transistor
JPH04136817U (ja) * 1991-03-29 1992-12-21 タツタ電線株式会社 耐油・耐薬品・耐摩耗・耐屈曲・可撓性ケーブル
JPH04136818U (ja) * 1991-03-29 1992-12-21 タツタ電線株式会社 耐油・耐薬品・耐摩耗・耐屈曲・可撓性ケーブル
JPH0520208U (ja) * 1991-06-27 1993-03-12 タツタ電線株式会社 耐屈曲性計装用ケーブル
JPH0520209U (ja) * 1991-06-27 1993-03-12 タツタ電線株式会社 耐屈曲性計装用ケーブル
JPH0538718U (ja) * 1991-09-11 1993-05-25 タツタ電線株式会社 耐屈曲性シールドケーブル
US6426523B1 (en) 1996-10-30 2002-07-30 Nec Corporation Heterojunction field effect transistor

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027170A (en) * 1988-09-30 1991-06-25 Sumitomo Electric Industries, Ltd. Semiconductor device MESFET with upper and lower layers
WO1991013466A1 (en) * 1990-02-20 1991-09-05 Varian Associates, Inc. High electron mobility transistor
US5270798A (en) * 1990-02-20 1993-12-14 Varian Associates, Inc. High electron mobility transistor
EP0469136B1 (en) * 1990-02-20 1997-05-07 Varian Associates, Inc. High electron mobility transistor
JPH04136817U (ja) * 1991-03-29 1992-12-21 タツタ電線株式会社 耐油・耐薬品・耐摩耗・耐屈曲・可撓性ケーブル
JPH04136818U (ja) * 1991-03-29 1992-12-21 タツタ電線株式会社 耐油・耐薬品・耐摩耗・耐屈曲・可撓性ケーブル
JPH0520208U (ja) * 1991-06-27 1993-03-12 タツタ電線株式会社 耐屈曲性計装用ケーブル
JPH0520209U (ja) * 1991-06-27 1993-03-12 タツタ電線株式会社 耐屈曲性計装用ケーブル
JPH0538718U (ja) * 1991-09-11 1993-05-25 タツタ電線株式会社 耐屈曲性シールドケーブル
US6426523B1 (en) 1996-10-30 2002-07-30 Nec Corporation Heterojunction field effect transistor
US6720200B2 (en) 1996-10-30 2004-04-13 Nec Corporation Field effect transistor and fabrication process thereof

Also Published As

Publication number Publication date
JPS6253953B2 (en, 2012) 1987-11-12

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