JPS6253953B2 - - Google Patents

Info

Publication number
JPS6253953B2
JPS6253953B2 JP54168672A JP16867279A JPS6253953B2 JP S6253953 B2 JPS6253953 B2 JP S6253953B2 JP 54168672 A JP54168672 A JP 54168672A JP 16867279 A JP16867279 A JP 16867279A JP S6253953 B2 JPS6253953 B2 JP S6253953B2
Authority
JP
Japan
Prior art keywords
active layer
drain
gate
region
gallium arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54168672A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5691477A (en
Inventor
Hideaki Kozu
Akira Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP16867279A priority Critical patent/JPS5691477A/ja
Publication of JPS5691477A publication Critical patent/JPS5691477A/ja
Publication of JPS6253953B2 publication Critical patent/JPS6253953B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
JP16867279A 1979-12-25 1979-12-25 Semiconductor Granted JPS5691477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16867279A JPS5691477A (en) 1979-12-25 1979-12-25 Semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16867279A JPS5691477A (en) 1979-12-25 1979-12-25 Semiconductor

Publications (2)

Publication Number Publication Date
JPS5691477A JPS5691477A (en) 1981-07-24
JPS6253953B2 true JPS6253953B2 (en, 2012) 1987-11-12

Family

ID=15872344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16867279A Granted JPS5691477A (en) 1979-12-25 1979-12-25 Semiconductor

Country Status (1)

Country Link
JP (1) JPS5691477A (en, 2012)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1301955C (en) * 1988-09-30 1992-05-26 Masanori Nishiguchi Semiconductor device mesfet with upper and lower layers
US5270798A (en) * 1990-02-20 1993-12-14 Varian Associates, Inc. High electron mobility transistor
JPH04136818U (ja) * 1991-03-29 1992-12-21 タツタ電線株式会社 耐油・耐薬品・耐摩耗・耐屈曲・可撓性ケーブル
JPH04136817U (ja) * 1991-03-29 1992-12-21 タツタ電線株式会社 耐油・耐薬品・耐摩耗・耐屈曲・可撓性ケーブル
JPH0520209U (ja) * 1991-06-27 1993-03-12 タツタ電線株式会社 耐屈曲性計装用ケーブル
JPH0520208U (ja) * 1991-06-27 1993-03-12 タツタ電線株式会社 耐屈曲性計装用ケーブル
JPH0538718U (ja) * 1991-09-11 1993-05-25 タツタ電線株式会社 耐屈曲性シールドケーブル
JP3147009B2 (ja) 1996-10-30 2001-03-19 日本電気株式会社 電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
JPS5691477A (en) 1981-07-24

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