JPS5658255A - Mos type semiconductor memory device - Google Patents

Mos type semiconductor memory device

Info

Publication number
JPS5658255A
JPS5658255A JP13280979A JP13280979A JPS5658255A JP S5658255 A JPS5658255 A JP S5658255A JP 13280979 A JP13280979 A JP 13280979A JP 13280979 A JP13280979 A JP 13280979A JP S5658255 A JPS5658255 A JP S5658255A
Authority
JP
Japan
Prior art keywords
film
memory capacity
substrate
impurities
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13280979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6410948B2 (enrdf_load_stackoverflow
Inventor
Masayoshi Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP13280979A priority Critical patent/JPS5658255A/ja
Publication of JPS5658255A publication Critical patent/JPS5658255A/ja
Publication of JPS6410948B2 publication Critical patent/JPS6410948B2/ja
Granted legal-status Critical Current

Links

Classifications

    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47C—CHAIRS; SOFAS; BEDS
    • A47C7/00—Parts, details, or accessories of chairs or stools
    • A47C7/62—Accessories for chairs
    • A47C7/68—Arm-rest tables ; or back-rest tables
    • A47C7/70—Arm-rest tables ; or back-rest tables of foldable type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP13280979A 1979-10-17 1979-10-17 Mos type semiconductor memory device Granted JPS5658255A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13280979A JPS5658255A (en) 1979-10-17 1979-10-17 Mos type semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13280979A JPS5658255A (en) 1979-10-17 1979-10-17 Mos type semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5658255A true JPS5658255A (en) 1981-05-21
JPS6410948B2 JPS6410948B2 (enrdf_load_stackoverflow) 1989-02-22

Family

ID=15090079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13280979A Granted JPS5658255A (en) 1979-10-17 1979-10-17 Mos type semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5658255A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61208255A (ja) * 1985-03-13 1986-09-16 Toshiba Corp 半導体記憶装置
JPS63208263A (ja) * 1987-02-25 1988-08-29 Toshiba Corp 半導体装置
US4974040A (en) * 1987-06-17 1990-11-27 Fujitsu Limited Dynamic random access memory device and method of producing same
JPH03270162A (ja) * 1990-03-20 1991-12-02 Toshiba Corp 半導体装置の製造方法
US5071783A (en) * 1987-06-17 1991-12-10 Fujitsu Limited Method of producing a dynamic random access memory device
US5650647A (en) * 1987-06-17 1997-07-22 Fujitsu Limited Dynamic random access memory device and method of producing same
US5939746A (en) * 1995-12-14 1999-08-17 Nec Corporation Semiconductor memory device and manufacturing method of the same
US6046468A (en) * 1987-11-25 2000-04-04 Fujitsu Limited Dynamic random access memory device and method for producing the same
US6617205B1 (en) 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104088A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Mis capacitor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104088A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Mis capacitor

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61208255A (ja) * 1985-03-13 1986-09-16 Toshiba Corp 半導体記憶装置
JPS63208263A (ja) * 1987-02-25 1988-08-29 Toshiba Corp 半導体装置
US5650647A (en) * 1987-06-17 1997-07-22 Fujitsu Limited Dynamic random access memory device and method of producing same
US5021357A (en) * 1987-06-17 1991-06-04 Fujitsu Limited Method of making a dram cell with stacked capacitor
US5071783A (en) * 1987-06-17 1991-12-10 Fujitsu Limited Method of producing a dynamic random access memory device
US4974040A (en) * 1987-06-17 1990-11-27 Fujitsu Limited Dynamic random access memory device and method of producing same
US6046468A (en) * 1987-11-25 2000-04-04 Fujitsu Limited Dynamic random access memory device and method for producing the same
US6114721A (en) * 1987-11-25 2000-09-05 Fujitsu Limited Dynamic random access memory device and method for producing the same
JPH03270162A (ja) * 1990-03-20 1991-12-02 Toshiba Corp 半導体装置の製造方法
US6617205B1 (en) 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
US6791134B2 (en) 1995-11-20 2004-09-14 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
US6798005B2 (en) 1995-11-20 2004-09-28 Hitachi, Ltd. Semiconductor memory device having large storage capacity and minimal step height between memory cell and peripheral circuits
US7196368B2 (en) 1995-11-20 2007-03-27 Renesas Technology Corp. Semiconductor memory arrangements with crown shaped capacitor arrangements trenched in interlayer dielectric film
US5939746A (en) * 1995-12-14 1999-08-17 Nec Corporation Semiconductor memory device and manufacturing method of the same
US5953609A (en) * 1995-12-14 1999-09-14 Nec Corporation Method of manufacturing a semiconductor memory device

Also Published As

Publication number Publication date
JPS6410948B2 (enrdf_load_stackoverflow) 1989-02-22

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