JPS56100442A - Semiconductor ic device - Google Patents

Semiconductor ic device

Info

Publication number
JPS56100442A
JPS56100442A JP329780A JP329780A JPS56100442A JP S56100442 A JPS56100442 A JP S56100442A JP 329780 A JP329780 A JP 329780A JP 329780 A JP329780 A JP 329780A JP S56100442 A JPS56100442 A JP S56100442A
Authority
JP
Japan
Prior art keywords
layer
sio26
resistance
electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP329780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS628940B2 (enExample
Inventor
Takehide Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP329780A priority Critical patent/JPS56100442A/ja
Publication of JPS56100442A publication Critical patent/JPS56100442A/ja
Publication of JPS628940B2 publication Critical patent/JPS628940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP329780A 1980-01-16 1980-01-16 Semiconductor ic device Granted JPS56100442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP329780A JPS56100442A (en) 1980-01-16 1980-01-16 Semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP329780A JPS56100442A (en) 1980-01-16 1980-01-16 Semiconductor ic device

Publications (2)

Publication Number Publication Date
JPS56100442A true JPS56100442A (en) 1981-08-12
JPS628940B2 JPS628940B2 (enExample) 1987-02-25

Family

ID=11553433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP329780A Granted JPS56100442A (en) 1980-01-16 1980-01-16 Semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS56100442A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263254A (ja) * 1985-05-17 1986-11-21 Nec Corp 入力保護装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263254A (ja) * 1985-05-17 1986-11-21 Nec Corp 入力保護装置

Also Published As

Publication number Publication date
JPS628940B2 (enExample) 1987-02-25

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