JPS628940B2 - - Google Patents

Info

Publication number
JPS628940B2
JPS628940B2 JP55003297A JP329780A JPS628940B2 JP S628940 B2 JPS628940 B2 JP S628940B2 JP 55003297 A JP55003297 A JP 55003297A JP 329780 A JP329780 A JP 329780A JP S628940 B2 JPS628940 B2 JP S628940B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
semiconductor
electrode
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55003297A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56100442A (en
Inventor
Takehide Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP329780A priority Critical patent/JPS56100442A/ja
Publication of JPS56100442A publication Critical patent/JPS56100442A/ja
Publication of JPS628940B2 publication Critical patent/JPS628940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0126—
    • H10W10/13—

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP329780A 1980-01-16 1980-01-16 Semiconductor ic device Granted JPS56100442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP329780A JPS56100442A (en) 1980-01-16 1980-01-16 Semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP329780A JPS56100442A (en) 1980-01-16 1980-01-16 Semiconductor ic device

Publications (2)

Publication Number Publication Date
JPS56100442A JPS56100442A (en) 1981-08-12
JPS628940B2 true JPS628940B2 (enExample) 1987-02-25

Family

ID=11553433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP329780A Granted JPS56100442A (en) 1980-01-16 1980-01-16 Semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS56100442A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263254A (ja) * 1985-05-17 1986-11-21 Nec Corp 入力保護装置

Also Published As

Publication number Publication date
JPS56100442A (en) 1981-08-12

Similar Documents

Publication Publication Date Title
US6518623B1 (en) Semiconductor device having a buried-channel MOS structure
US5420061A (en) Method for improving latchup immunity in a dual-polysilicon gate process
US4853340A (en) Semiconductor device isolated by a pair of field oxide regions
JPH0770685B2 (ja) 相補形ｍｉｓ半導体集積回路
US5242849A (en) Method for the fabrication of MOS devices
US5238857A (en) Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
JPH04241452A (ja) 半導体集積回路装置
US6207996B1 (en) Semiconductor device and method for manufacturing the same
JPH07321327A (ja) 半導体装置及びその製造方法
JP3057792B2 (ja) 薄膜トランジスタの製造方法
JPH08195443A (ja) 半導体装置及びその製造方法
JP3298313B2 (ja) 接合形電界効果トランジスタ及びその作製方法
US3936862A (en) MISFET and method of manufacture
JPH01194349A (ja) 半導体装置
JPS628940B2 (enExample)
JPS6359258B2 (enExample)
JPS63137478A (ja) 保護回路をもつ半導体装置の製造方法
JP2888857B2 (ja) 半導体装置
US5962898A (en) Field-effect transistor
JPH0475387A (ja) Ｍｉｓ型半導体装置
US4528581A (en) High density CMOS devices with conductively interconnected wells
JP3424146B2 (ja) 半導体装置およびその製造方法
JPH06140502A (ja) 半導体装置の製造方法
JP2948256B2 (ja) 半導体記憶装置の製造方法
JPH0430194B2 (enExample)