JPS56100442A - Semiconductor ic device - Google Patents
Semiconductor ic deviceInfo
- Publication number
- JPS56100442A JPS56100442A JP329780A JP329780A JPS56100442A JP S56100442 A JPS56100442 A JP S56100442A JP 329780 A JP329780 A JP 329780A JP 329780 A JP329780 A JP 329780A JP S56100442 A JPS56100442 A JP S56100442A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sio26
- resistance
- electrode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP329780A JPS56100442A (en) | 1980-01-16 | 1980-01-16 | Semiconductor ic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP329780A JPS56100442A (en) | 1980-01-16 | 1980-01-16 | Semiconductor ic device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56100442A true JPS56100442A (en) | 1981-08-12 |
JPS628940B2 JPS628940B2 (ja) | 1987-02-25 |
Family
ID=11553433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP329780A Granted JPS56100442A (en) | 1980-01-16 | 1980-01-16 | Semiconductor ic device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56100442A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61263254A (ja) * | 1985-05-17 | 1986-11-21 | Nec Corp | 入力保護装置 |
-
1980
- 1980-01-16 JP JP329780A patent/JPS56100442A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61263254A (ja) * | 1985-05-17 | 1986-11-21 | Nec Corp | 入力保護装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS628940B2 (ja) | 1987-02-25 |
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