JPS56124257A - Manufacturing of semiconductor integrated circuit device - Google Patents

Manufacturing of semiconductor integrated circuit device

Info

Publication number
JPS56124257A
JPS56124257A JP2430781A JP2430781A JPS56124257A JP S56124257 A JPS56124257 A JP S56124257A JP 2430781 A JP2430781 A JP 2430781A JP 2430781 A JP2430781 A JP 2430781A JP S56124257 A JPS56124257 A JP S56124257A
Authority
JP
Japan
Prior art keywords
layer
type
fet
type substrate
joining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2430781A
Other languages
Japanese (ja)
Inventor
Naonobu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2430781A priority Critical patent/JPS56124257A/en
Publication of JPS56124257A publication Critical patent/JPS56124257A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Abstract

PURPOSE:To obtain an IC devices with a broad range of application, by providing an NPN type bi-polar transistor on an N layer on a P type substrate, and also by making it possible to separate it from the P type substrate electrically and incorporate a PNP-structure circuit element in the system. CONSTITUTION:With SiO2 9' as a mask, B ion is injected and dispersed on an N epitaxial layer 8 on a P type substrate 6, having an N<+> flush layer, to form a P<+> separating layer 10' and second gate layer 11 of a joining type FET. And then, by dispersion, an N emitter layer 15, a collector joining layer 16 and N<+> layers 17 and 18 of FET are formed on a P type layer 14. At the time of forming the P layer 11', if an N<+> flush layer 19 is provided also on the bottom side of the layer 11', a PNP tri-layer-structure FET by the layers 11'-12'-13' can be electrically separated from the P type substrate 8 and incorporated into the system. There is an extremely wide variety of application for an IC in which N channel joining type FET is thus incorporated.
JP2430781A 1981-02-23 1981-02-23 Manufacturing of semiconductor integrated circuit device Pending JPS56124257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2430781A JPS56124257A (en) 1981-02-23 1981-02-23 Manufacturing of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2430781A JPS56124257A (en) 1981-02-23 1981-02-23 Manufacturing of semiconductor integrated circuit device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3677173A Division JPS5720710B2 (en) 1973-04-02 1973-04-02

Publications (1)

Publication Number Publication Date
JPS56124257A true JPS56124257A (en) 1981-09-29

Family

ID=12134513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2430781A Pending JPS56124257A (en) 1981-02-23 1981-02-23 Manufacturing of semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56124257A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474309A (en) * 1967-06-30 1969-10-21 Texas Instruments Inc Monolithic circuit with high q capacitor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474309A (en) * 1967-06-30 1969-10-21 Texas Instruments Inc Monolithic circuit with high q capacitor

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