JPS5591162A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5591162A
JPS5591162A JP16499778A JP16499778A JPS5591162A JP S5591162 A JPS5591162 A JP S5591162A JP 16499778 A JP16499778 A JP 16499778A JP 16499778 A JP16499778 A JP 16499778A JP S5591162 A JPS5591162 A JP S5591162A
Authority
JP
Japan
Prior art keywords
latch
transistor
transistors
power supply
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16499778A
Other languages
English (en)
Other versions
JPS6245706B2 (ja
Inventor
Hideo Kikuchi
Haruyoshi Takaoka
Shigenori Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16499778A priority Critical patent/JPS5591162A/ja
Priority to EP79302775A priority patent/EP0013482A3/en
Priority to US06/102,017 priority patent/US4288804A/en
Publication of JPS5591162A publication Critical patent/JPS5591162A/ja
Publication of JPS6245706B2 publication Critical patent/JPS6245706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP16499778A 1978-12-27 1978-12-27 Semiconductor device Granted JPS5591162A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP16499778A JPS5591162A (en) 1978-12-27 1978-12-27 Semiconductor device
EP79302775A EP0013482A3 (en) 1978-12-27 1979-12-04 Complementary metal-oxide semiconductor
US06/102,017 US4288804A (en) 1978-12-27 1979-12-10 Complementary metal-oxide semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16499778A JPS5591162A (en) 1978-12-27 1978-12-27 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5591162A true JPS5591162A (en) 1980-07-10
JPS6245706B2 JPS6245706B2 (ja) 1987-09-28

Family

ID=15803873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16499778A Granted JPS5591162A (en) 1978-12-27 1978-12-27 Semiconductor device

Country Status (3)

Country Link
US (1) US4288804A (ja)
EP (1) EP0013482A3 (ja)
JP (1) JPS5591162A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163836A (ja) * 1983-03-09 1984-09-14 Toshiba Corp 半導体集積回路
JPS6076160A (ja) * 1983-10-03 1985-04-30 Seiko Epson Corp 半導体集積回路
JPS61164252A (ja) * 1985-01-17 1986-07-24 Sanyo Electric Co Ltd Ｃｍｏｓ半導体装置
JPS61164254A (ja) * 1985-01-17 1986-07-24 Sanyo Electric Co Ltd Ｃｍｏｓ半導体装置
JPS61164253A (ja) * 1985-01-17 1986-07-24 Sanyo Electric Co Ltd Ｃｍｏｓ半導体装置
JPS61188962A (ja) * 1985-02-18 1986-08-22 Sanyo Electric Co Ltd Ｃｍｏｓ半導体装置

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943824B2 (ja) * 1982-03-03 1984-10-24 三菱電機株式会社 半導体集積回路装置
US4870471A (en) * 1982-09-30 1989-09-26 Mitsubishi Denki Kabushiki Kaisha Complementary metal-oxide semiconductor integrated circuit device with isolation
US4578629A (en) * 1983-09-09 1986-03-25 Westinghouse Electric Corp. Monolithic microwave "split load" phase inverter for push-pull monolithic FET amplifier circuits
JPS6110269A (ja) * 1984-06-26 1986-01-17 Nec Corp 半導体集積回路
JPS6136946A (ja) * 1984-07-30 1986-02-21 Nec Corp 半導体装置
JPS61100947A (ja) * 1984-10-22 1986-05-19 Toshiba Corp 半導体集積回路装置
US4762802A (en) * 1984-11-09 1988-08-09 American Telephone And Telegraph Company At&T, Bell Laboratories Method for preventing latchup in CMOS devices
US4675561A (en) * 1985-11-15 1987-06-23 Precision Monolithics, Inc. FET output drive circuit with parasitic transistor inhibition
US4639359A (en) * 1985-12-16 1987-01-27 International Minerals & Chemical Corp. Process of removing cationic impurities from wet process phosphoric acid
EP0248266A3 (de) * 1986-06-06 1990-04-25 Siemens Aktiengesellschaft Logikschaltung mit einer Mehrzahl von zueinander komplementären Feldeffekttransistoren
EP0248267A3 (de) * 1986-06-06 1990-04-25 Siemens Aktiengesellschaft Monolithisch integrierte Schaltung mit zueinander parallelen Schaltungszweigen
FR2623016B1 (fr) * 1987-11-06 1991-06-14 Thomson Semiconducteurs Dispositif de fusion d'un fusible dans un circuit integre de type cmos
JP3184298B2 (ja) * 1992-05-28 2001-07-09 沖電気工業株式会社 Ｃｍｏｓ出力回路
DE19545554A1 (de) * 1995-12-06 1997-06-12 Siemens Ag CMOS-Anordnung
US6359316B1 (en) * 1997-09-19 2002-03-19 Cypress Semiconductor Corp. Method and apparatus to prevent latch-up in CMOS devices
US6657241B1 (en) * 1998-04-10 2003-12-02 Cypress Semiconductor Corp. ESD structure having an improved noise immunity in CMOS and BICMOS semiconductor devices
US6483386B1 (en) 2000-09-29 2002-11-19 Cypress Semiconductor Corp. Low voltage differential amplifier with high voltage protection
JP2002124580A (ja) * 2000-10-18 2002-04-26 Yamaha Corp 入力保護回路
US7301370B1 (en) * 2003-05-22 2007-11-27 Cypress Semiconductor Corporation High-speed differential logic to CMOS translator architecture with low data-dependent jitter and duty cycle distortion
US7737734B1 (en) 2003-12-19 2010-06-15 Cypress Semiconductor Corporation Adaptive output driver
US7956641B1 (en) 2005-04-28 2011-06-07 Cypress Semiconductor Corporation Low voltage interface circuit

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3955210A (en) * 1974-12-30 1976-05-04 International Business Machines Corporation Elimination of SCR structure
GB1559583A (en) * 1975-07-18 1980-01-23 Tokyo Shibaura Electric Co Complementary mosfet device and method of manufacturing the same
US4167747A (en) * 1975-07-18 1979-09-11 Tokyo Shibaura Electric Co., Ltd. Complementary mosfet device and method of manufacturing the same
JPS5211872A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor device
GB1559581A (en) * 1975-07-18 1980-01-23 Tokyo Shibaura Electric Co Complementary mosfet device
JPS5234680A (en) * 1975-09-12 1977-03-16 Toshiba Corp Integrated circuit
US4203126A (en) * 1975-11-13 1980-05-13 Siliconix, Inc. CMOS structure and method utilizing retarded electric field for minimum latch-up
US4035826A (en) * 1976-02-23 1977-07-12 Rca Corporation Reduction of parasitic bipolar effects in integrated circuits employing insulated gate field effect transistors via the use of low resistance substrate contacts extending through source region
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163836A (ja) * 1983-03-09 1984-09-14 Toshiba Corp 半導体集積回路
JPH0316790B2 (ja) * 1983-03-09 1991-03-06 Tokyo Shibaura Electric Co
JPS6076160A (ja) * 1983-10-03 1985-04-30 Seiko Epson Corp 半導体集積回路
JPS61164252A (ja) * 1985-01-17 1986-07-24 Sanyo Electric Co Ltd Ｃｍｏｓ半導体装置
JPS61164254A (ja) * 1985-01-17 1986-07-24 Sanyo Electric Co Ltd Ｃｍｏｓ半導体装置
JPS61164253A (ja) * 1985-01-17 1986-07-24 Sanyo Electric Co Ltd Ｃｍｏｓ半導体装置
JPS61188962A (ja) * 1985-02-18 1986-08-22 Sanyo Electric Co Ltd Ｃｍｏｓ半導体装置
JPH039628B2 (ja) * 1985-02-18 1991-02-08 Sanyo Electric Co

Also Published As

Publication number Publication date
US4288804A (en) 1981-09-08
EP0013482A3 (en) 1980-10-15
JPS6245706B2 (ja) 1987-09-28
EP0013482A2 (en) 1980-07-23

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