JPS57157312A - Integrated semiconductor device - Google Patents

Integrated semiconductor device

Info

Publication number
JPS57157312A
JPS57157312A JP56042177A JP4217781A JPS57157312A JP S57157312 A JPS57157312 A JP S57157312A JP 56042177 A JP56042177 A JP 56042177A JP 4217781 A JP4217781 A JP 4217781A JP S57157312 A JPS57157312 A JP S57157312A
Authority
JP
Japan
Prior art keywords
voltage
output
constant voltage
source
differential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56042177A
Other languages
Japanese (ja)
Inventor
Tadahide Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56042177A priority Critical patent/JPS57157312A/en
Publication of JPS57157312A publication Critical patent/JPS57157312A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/618—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series and in parallel with the load as final control devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

PURPOSE:To achieve an integrated semiconductor device for a constant voltage source suitable for a tri-state level lock generation, by the constitution of the provision of a large current supplying ability with an MOS field effect transistor. CONSTITUTION:The source of a P-MOS transistor (TR)QP1 is connected to a 5V power supply line VDD and the drain is connected to a constant voltage output terminal N1, and the source of an N-MOS TRQN2 is connected to 0V ground line GND and the drain is connected to a constant voltage output terminal N1. The differential input terminal of a differential amplifier 3 is connected to a constant voltage line R and an output terminal of the 1st reference voltage generating circuit 1, and a differential input terminal of a differential amplifier 4 is connected to the constant voltage source line R and the output terminal of the 2nd reference voltage generating circuit 2. A voltage shift amplifier 5 amplifies the differential output of the differential amplifier 3, and when a voltage V0 of the constant voltage source line R is higher than the 1st reference voltage V1, the output voltage is taken as 5V, and when the voltage V0 is lower than the 1st reference voltage V1, the output voltage is taken as 0V. Similarly, the output voltage is taken as 5V with a voltage shift amplifier 6.
JP56042177A 1981-03-23 1981-03-23 Integrated semiconductor device Pending JPS57157312A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56042177A JPS57157312A (en) 1981-03-23 1981-03-23 Integrated semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56042177A JPS57157312A (en) 1981-03-23 1981-03-23 Integrated semiconductor device

Publications (1)

Publication Number Publication Date
JPS57157312A true JPS57157312A (en) 1982-09-28

Family

ID=12628697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56042177A Pending JPS57157312A (en) 1981-03-23 1981-03-23 Integrated semiconductor device

Country Status (1)

Country Link
JP (1) JPS57157312A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61221812A (en) * 1985-03-27 1986-10-02 Mitsubishi Electric Corp Constant voltage generating circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5482111A (en) * 1977-12-14 1979-06-30 Tokyo Keiki Kk Transmitting circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5482111A (en) * 1977-12-14 1979-06-30 Tokyo Keiki Kk Transmitting circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61221812A (en) * 1985-03-27 1986-10-02 Mitsubishi Electric Corp Constant voltage generating circuit
JPH0574851B2 (en) * 1985-03-27 1993-10-19 Mitsubishi Electric Corp

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