JPS5568675A - Fabrication of complementary mos transistor - Google Patents

Fabrication of complementary mos transistor

Info

Publication number
JPS5568675A
JPS5568675A JP14180078A JP14180078A JPS5568675A JP S5568675 A JPS5568675 A JP S5568675A JP 14180078 A JP14180078 A JP 14180078A JP 14180078 A JP14180078 A JP 14180078A JP S5568675 A JPS5568675 A JP S5568675A
Authority
JP
Japan
Prior art keywords
film
films
gate
source
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14180078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6349387B2 (enrdf_load_stackoverflow
Inventor
Takuji Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14180078A priority Critical patent/JPS5568675A/ja
Publication of JPS5568675A publication Critical patent/JPS5568675A/ja
Publication of JPS6349387B2 publication Critical patent/JPS6349387B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP14180078A 1978-11-17 1978-11-17 Fabrication of complementary mos transistor Granted JPS5568675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14180078A JPS5568675A (en) 1978-11-17 1978-11-17 Fabrication of complementary mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14180078A JPS5568675A (en) 1978-11-17 1978-11-17 Fabrication of complementary mos transistor

Publications (2)

Publication Number Publication Date
JPS5568675A true JPS5568675A (en) 1980-05-23
JPS6349387B2 JPS6349387B2 (enrdf_load_stackoverflow) 1988-10-04

Family

ID=15300420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14180078A Granted JPS5568675A (en) 1978-11-17 1978-11-17 Fabrication of complementary mos transistor

Country Status (1)

Country Link
JP (1) JPS5568675A (enrdf_load_stackoverflow)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106068A (en) * 1980-12-23 1982-07-01 Seiko Epson Corp Manufacture of semiconductor device
JPS57113269A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Complementary-metal oxide semiconductor type semiconductor device
JPS57199260A (en) * 1981-05-29 1982-12-07 Texas Instruments Inc Silicide electrode for c-mos device and method of producing same
JPS58209145A (ja) * 1982-05-14 1983-12-06 シ−メンス・アクチエンゲゼルシヤフト 集積ｍｏｓ電界効果トランジスタ回路の製造方法
JPS592363A (ja) * 1982-06-09 1984-01-07 テキサス・インスツルメンツ・インコ−ポレイテツド 相補型絶縁ゲート電界効果型装置
JPS5957469A (ja) * 1982-09-28 1984-04-03 Fujitsu Ltd 半導体装置
JPS59119863A (ja) * 1982-12-27 1984-07-11 Seiko Epson Corp 半導体装置
JPS59197162A (ja) * 1983-04-22 1984-11-08 Nec Corp 半導体装置
JPS6014461A (ja) * 1983-07-04 1985-01-25 Hitachi Ltd 相補型絶縁ゲート電界効果トランジスタの製造方法
JPS6041259A (ja) * 1983-08-17 1985-03-04 Nec Corp 半導体装置
JPS60117766A (ja) * 1983-11-30 1985-06-25 Nec Corp 半導体装置
JPS60210863A (ja) * 1984-01-10 1985-10-23 エス・ジ−・エス−アテス・コンポネンチ・エレツトロニシ・ソシエタ・ペル・アチオニ 相補ｍｏｓ集積回路及びその製造方法
EP0089265A3 (en) * 1982-03-04 1986-01-22 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Process of ion implant masking in cmos manufacture and resultant structure
JPS6187353A (ja) * 1984-06-20 1986-05-02 Hitachi Ltd 半導体集積回路装置
JPS6218064A (ja) * 1985-07-05 1987-01-27 シ−メンス、アクチエンゲゼルシヤフト スタテイツク・ライト・リ−ド・メモリにおける交差結合の製作方法
JPH01217945A (ja) * 1988-02-26 1989-08-31 Toshiba Corp 半導体装置の製造方法
JPH0273628A (ja) * 1988-09-08 1990-03-13 Oki Electric Ind Co Ltd 半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115659A (enrdf_load_stackoverflow) * 1973-03-07 1974-11-05
JPS5023586A (enrdf_load_stackoverflow) * 1973-06-30 1975-03-13
JPS51130183A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor ic and its process
JPS5388581A (en) * 1977-01-14 1978-08-04 Toshiba Corp Complementary type field effect transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115659A (enrdf_load_stackoverflow) * 1973-03-07 1974-11-05
JPS5023586A (enrdf_load_stackoverflow) * 1973-06-30 1975-03-13
JPS51130183A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor ic and its process
JPS5388581A (en) * 1977-01-14 1978-08-04 Toshiba Corp Complementary type field effect transistor

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106068A (en) * 1980-12-23 1982-07-01 Seiko Epson Corp Manufacture of semiconductor device
JPS57113269A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Complementary-metal oxide semiconductor type semiconductor device
JPS57199260A (en) * 1981-05-29 1982-12-07 Texas Instruments Inc Silicide electrode for c-mos device and method of producing same
EP0089265A3 (en) * 1982-03-04 1986-01-22 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Process of ion implant masking in cmos manufacture and resultant structure
JPS58209145A (ja) * 1982-05-14 1983-12-06 シ−メンス・アクチエンゲゼルシヤフト 集積ｍｏｓ電界効果トランジスタ回路の製造方法
JPS592363A (ja) * 1982-06-09 1984-01-07 テキサス・インスツルメンツ・インコ−ポレイテツド 相補型絶縁ゲート電界効果型装置
JPS5957469A (ja) * 1982-09-28 1984-04-03 Fujitsu Ltd 半導体装置
JPS59119863A (ja) * 1982-12-27 1984-07-11 Seiko Epson Corp 半導体装置
JPS59197162A (ja) * 1983-04-22 1984-11-08 Nec Corp 半導体装置
JPS6014461A (ja) * 1983-07-04 1985-01-25 Hitachi Ltd 相補型絶縁ゲート電界効果トランジスタの製造方法
JPS6041259A (ja) * 1983-08-17 1985-03-04 Nec Corp 半導体装置
JPS60117766A (ja) * 1983-11-30 1985-06-25 Nec Corp 半導体装置
JPS60210863A (ja) * 1984-01-10 1985-10-23 エス・ジ−・エス−アテス・コンポネンチ・エレツトロニシ・ソシエタ・ペル・アチオニ 相補ｍｏｓ集積回路及びその製造方法
JPS6187353A (ja) * 1984-06-20 1986-05-02 Hitachi Ltd 半導体集積回路装置
JPS6218064A (ja) * 1985-07-05 1987-01-27 シ−メンス、アクチエンゲゼルシヤフト スタテイツク・ライト・リ−ド・メモリにおける交差結合の製作方法
JPH01217945A (ja) * 1988-02-26 1989-08-31 Toshiba Corp 半導体装置の製造方法
JPH0273628A (ja) * 1988-09-08 1990-03-13 Oki Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6349387B2 (enrdf_load_stackoverflow) 1988-10-04

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