JPS5388581A - Complementary type field effect transistor - Google Patents

Complementary type field effect transistor

Info

Publication number
JPS5388581A
JPS5388581A JP247977A JP247977A JPS5388581A JP S5388581 A JPS5388581 A JP S5388581A JP 247977 A JP247977 A JP 247977A JP 247977 A JP247977 A JP 247977A JP S5388581 A JPS5388581 A JP S5388581A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
complementary type
silicides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP247977A
Other languages
Japanese (ja)
Inventor
Kenji Shibata
Toru Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP247977A priority Critical patent/JPS5388581A/en
Publication of JPS5388581A publication Critical patent/JPS5388581A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate the need for formation of contact parts and increase the scale of integration by simultaneously forming part or the whole of gate, source and drain electrodes and wirings by using high melting point metals or their silicides.
JP247977A 1977-01-14 1977-01-14 Complementary type field effect transistor Pending JPS5388581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP247977A JPS5388581A (en) 1977-01-14 1977-01-14 Complementary type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP247977A JPS5388581A (en) 1977-01-14 1977-01-14 Complementary type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5388581A true JPS5388581A (en) 1978-08-04

Family

ID=11530470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP247977A Pending JPS5388581A (en) 1977-01-14 1977-01-14 Complementary type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5388581A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568675A (en) * 1978-11-17 1980-05-23 Toshiba Corp Fabrication of complementary mos transistor
JPS6419721A (en) * 1988-03-25 1989-01-23 Seiko Epson Corp Integrated circuit
JPS6419720A (en) * 1988-03-25 1989-01-23 Seiko Epson Corp Integrated circuit
JPH0358472A (en) * 1989-07-26 1991-03-13 Nec Corp Cmos semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941067A (en) * 1972-08-28 1974-04-17
JPS5124873A (en) * 1974-08-24 1976-02-28 Nippon Electric Co

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941067A (en) * 1972-08-28 1974-04-17
JPS5124873A (en) * 1974-08-24 1976-02-28 Nippon Electric Co

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568675A (en) * 1978-11-17 1980-05-23 Toshiba Corp Fabrication of complementary mos transistor
JPS6349387B2 (en) * 1978-11-17 1988-10-04 Tokyo Shibaura Electric Co
JPS6419721A (en) * 1988-03-25 1989-01-23 Seiko Epson Corp Integrated circuit
JPS6419720A (en) * 1988-03-25 1989-01-23 Seiko Epson Corp Integrated circuit
JPH0358472A (en) * 1989-07-26 1991-03-13 Nec Corp Cmos semiconductor device

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