JPS6349387B2 - - Google Patents

Info

Publication number
JPS6349387B2
JPS6349387B2 JP53141800A JP14180078A JPS6349387B2 JP S6349387 B2 JPS6349387 B2 JP S6349387B2 JP 53141800 A JP53141800 A JP 53141800A JP 14180078 A JP14180078 A JP 14180078A JP S6349387 B2 JPS6349387 B2 JP S6349387B2
Authority
JP
Japan
Prior art keywords
type
film
forming
polycrystalline silicon
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53141800A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5568675A (en
Inventor
Takuji Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP14180078A priority Critical patent/JPS5568675A/ja
Publication of JPS5568675A publication Critical patent/JPS5568675A/ja
Publication of JPS6349387B2 publication Critical patent/JPS6349387B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP14180078A 1978-11-17 1978-11-17 Fabrication of complementary mos transistor Granted JPS5568675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14180078A JPS5568675A (en) 1978-11-17 1978-11-17 Fabrication of complementary mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14180078A JPS5568675A (en) 1978-11-17 1978-11-17 Fabrication of complementary mos transistor

Publications (2)

Publication Number Publication Date
JPS5568675A JPS5568675A (en) 1980-05-23
JPS6349387B2 true JPS6349387B2 (enrdf_load_stackoverflow) 1988-10-04

Family

ID=15300420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14180078A Granted JPS5568675A (en) 1978-11-17 1978-11-17 Fabrication of complementary mos transistor

Country Status (1)

Country Link
JP (1) JPS5568675A (enrdf_load_stackoverflow)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106068A (en) * 1980-12-23 1982-07-01 Seiko Epson Corp Manufacture of semiconductor device
JPS57113269A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Complementary-metal oxide semiconductor type semiconductor device
US4374700A (en) * 1981-05-29 1983-02-22 Texas Instruments Incorporated Method of manufacturing silicide contacts for CMOS devices
CA1194614A (en) * 1982-03-04 1985-10-01 Nan-Hsiung Tsai Process of ion implant masking in cmos manufacture and resultant structure
DE3218309A1 (de) * 1982-05-14 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-feldeffekttransistoren mit einer aus metallsiliziden bestehenden zusaetzlichen leiterbahnebene
JPS592363A (ja) * 1982-06-09 1984-01-07 テキサス・インスツルメンツ・インコ−ポレイテツド 相補型絶縁ゲート電界効果型装置
JPS5957469A (ja) * 1982-09-28 1984-04-03 Fujitsu Ltd 半導体装置
JPS59119863A (ja) * 1982-12-27 1984-07-11 Seiko Epson Corp 半導体装置
JPS6014461A (ja) * 1983-07-04 1985-01-25 Hitachi Ltd 相補型絶縁ゲート電界効果トランジスタの製造方法
JPS59197162A (ja) * 1983-04-22 1984-11-08 Nec Corp 半導体装置
JPS6041259A (ja) * 1983-08-17 1985-03-04 Nec Corp 半導体装置
JPS60117766A (ja) * 1983-11-30 1985-06-25 Nec Corp 半導体装置
IT1213120B (it) * 1984-01-10 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari a basse tensioni di soglia in circuiti integrati ad alta densita' e struttura da esso risultante.
JPH0626235B2 (ja) * 1984-06-20 1994-04-06 株式会社日立製作所 半導体集積回路装置
US4740479A (en) * 1985-07-05 1988-04-26 Siemens Aktiengesellschaft Method for the manufacture of cross-couplings between n-channel and p-channel CMOS field effect transistors of static write-read memories
JPH01217945A (ja) * 1988-02-26 1989-08-31 Toshiba Corp 半導体装置の製造方法
JPH0273628A (ja) * 1988-09-08 1990-03-13 Oki Electric Ind Co Ltd 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5241099B2 (enrdf_load_stackoverflow) * 1973-03-07 1977-10-17
JPS5847860B2 (ja) * 1973-06-30 1983-10-25 株式会社東芝 ハンドウタイソウチ
JPS5843912B2 (ja) * 1975-05-06 1983-09-29 松下電器産業株式会社 半導体集積回路装置の製造方法
JPS5388581A (en) * 1977-01-14 1978-08-04 Toshiba Corp Complementary type field effect transistor

Also Published As

Publication number Publication date
JPS5568675A (en) 1980-05-23

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