JPS55165649A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55165649A
JPS55165649A JP7351479A JP7351479A JPS55165649A JP S55165649 A JPS55165649 A JP S55165649A JP 7351479 A JP7351479 A JP 7351479A JP 7351479 A JP7351479 A JP 7351479A JP S55165649 A JPS55165649 A JP S55165649A
Authority
JP
Japan
Prior art keywords
layer
polycrystalline
wirings
laminated
integration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7351479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6241422B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7351479A priority Critical patent/JPS55165649A/ja
Publication of JPS55165649A publication Critical patent/JPS55165649A/ja
Publication of JPS6241422B2 publication Critical patent/JPS6241422B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP7351479A 1979-06-13 1979-06-13 Manufacture of semiconductor device Granted JPS55165649A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7351479A JPS55165649A (en) 1979-06-13 1979-06-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7351479A JPS55165649A (en) 1979-06-13 1979-06-13 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55165649A true JPS55165649A (en) 1980-12-24
JPS6241422B2 JPS6241422B2 (enrdf_load_stackoverflow) 1987-09-02

Family

ID=13520423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7351479A Granted JPS55165649A (en) 1979-06-13 1979-06-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165649A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS585356U (ja) * 1981-07-02 1983-01-13 三洋電機株式会社 抵抗素子
JPS62279679A (ja) * 1986-05-29 1987-12-04 Fujitsu Ltd 論理用半導体装置
DE4309898B4 (de) * 1992-03-30 2005-11-03 Rohm Co. Ltd. Verfahren zur Herstellung eines Bipolartransistors mit einer Polysiliziumschicht zwischen einem Halbleiterbereich und einem Oberflächenelektrodenmetall

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS585356U (ja) * 1981-07-02 1983-01-13 三洋電機株式会社 抵抗素子
JPS62279679A (ja) * 1986-05-29 1987-12-04 Fujitsu Ltd 論理用半導体装置
DE4309898B4 (de) * 1992-03-30 2005-11-03 Rohm Co. Ltd. Verfahren zur Herstellung eines Bipolartransistors mit einer Polysiliziumschicht zwischen einem Halbleiterbereich und einem Oberflächenelektrodenmetall

Also Published As

Publication number Publication date
JPS6241422B2 (enrdf_load_stackoverflow) 1987-09-02

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