JPS55121673A - Manufacture of hybrid integrated circuit - Google Patents

Manufacture of hybrid integrated circuit

Info

Publication number
JPS55121673A
JPS55121673A JP2971379A JP2971379A JPS55121673A JP S55121673 A JPS55121673 A JP S55121673A JP 2971379 A JP2971379 A JP 2971379A JP 2971379 A JP2971379 A JP 2971379A JP S55121673 A JPS55121673 A JP S55121673A
Authority
JP
Japan
Prior art keywords
film
resist
predetermined shape
layer
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2971379A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0353781B2 (enrdf_load_stackoverflow
Inventor
Rikuo Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2971379A priority Critical patent/JPS55121673A/ja
Publication of JPS55121673A publication Critical patent/JPS55121673A/ja
Publication of JPH0353781B2 publication Critical patent/JPH0353781B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components

Landscapes

  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP2971379A 1979-03-14 1979-03-14 Manufacture of hybrid integrated circuit Granted JPS55121673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2971379A JPS55121673A (en) 1979-03-14 1979-03-14 Manufacture of hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2971379A JPS55121673A (en) 1979-03-14 1979-03-14 Manufacture of hybrid integrated circuit

Publications (2)

Publication Number Publication Date
JPS55121673A true JPS55121673A (en) 1980-09-18
JPH0353781B2 JPH0353781B2 (enrdf_load_stackoverflow) 1991-08-16

Family

ID=12283741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2971379A Granted JPS55121673A (en) 1979-03-14 1979-03-14 Manufacture of hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPS55121673A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0353781B2 (enrdf_load_stackoverflow) 1991-08-16

Similar Documents

Publication Publication Date Title
JPS54161275A (en) Etching method by gas containing hydrogen fluoride
JPS52120782A (en) Manufacture of semiconductor device
JPS55121673A (en) Manufacture of hybrid integrated circuit
JPS57154855A (en) Manufacture of semiconductor device
JPS56122143A (en) Manufacture of semiconductor device
JPS5680130A (en) Manufacture of semiconductor device
JPS56148845A (en) Manufacture of semiconductor device
JPS6420624A (en) Manufacture of semiconductor device
JPS5640257A (en) Field structure of semiconductor device
JPS56130925A (en) Manufacture of semiconductor device
JPS54163034A (en) Removing method of resist
JPS5598827A (en) Manufacture of electrode of semiconductor device
JPS55132038A (en) Forming method for metallic electrode on semiconductor substrate
JPS5762543A (en) Manufacture of semiconductor device
JPS5518041A (en) Method of fabricating semiconductor device
JPS5555532A (en) Method of manufacturing semiconductor integrated circuit
JPS55128830A (en) Method of working photoresist film
JPS5679451A (en) Production of semiconductor device
JPS54107277A (en) Production of semiconductor device
JPS5626440A (en) Method for fine pattern formation
JPS6432632A (en) Manufacture of semiconductor device
JPS54154983A (en) Forming method of metal wiring
JPS5569263A (en) Dry etching process
JPS649619A (en) Manufacture of semiconductor device
JPS564235A (en) Manufacture of semiconductor device