JPS5569263A - Dry etching process - Google Patents

Dry etching process

Info

Publication number
JPS5569263A
JPS5569263A JP13977878A JP13977878A JPS5569263A JP S5569263 A JPS5569263 A JP S5569263A JP 13977878 A JP13977878 A JP 13977878A JP 13977878 A JP13977878 A JP 13977878A JP S5569263 A JPS5569263 A JP S5569263A
Authority
JP
Japan
Prior art keywords
film
substrate
pattern
gas
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13977878A
Other languages
Japanese (ja)
Inventor
Hiroshi Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13977878A priority Critical patent/JPS5569263A/en
Publication of JPS5569263A publication Critical patent/JPS5569263A/en
Pending legal-status Critical Current

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  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To increase etching speed, and to increase etching selection ratio of Si substrate or Si oxide coating, by etching Al (or Al alloy) coating in a gas plasma made by mixing Cl-contg. reactive gas with O2.
CONSTITUTION: An Si substrate 11 is coated with layers of a field oxidation film 12, a gate oxidation film 13, a gare electrode 14, then a contact hole 18 is formed by etching an SiO2 film 15 applied all over the substrate 11, simultaneously diffusion layers 16, 17 are formed. Over all the substrate is formed an Al film or an Al alloy film 19. A positive type photoresist is applied on the film 19, then a resist pattern 20 for wiring use is formed by the irradiation of ultraviolet rays. Successively, the portion of the film 19, which is not covered with the pattern 20 is etched by plasma discharge in a mixed gas of Cl-contg. reactive gas with O2 gas. The SiO2 film 15 and substrate under the film 19 are scarcely etched. Then the pattern 20 is removed to obtain a MOS type semiconductor unit having wiring pattern of Al film.
COPYRIGHT: (C)1980,JPO&Japio
JP13977878A 1978-11-15 1978-11-15 Dry etching process Pending JPS5569263A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13977878A JPS5569263A (en) 1978-11-15 1978-11-15 Dry etching process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13977878A JPS5569263A (en) 1978-11-15 1978-11-15 Dry etching process

Publications (1)

Publication Number Publication Date
JPS5569263A true JPS5569263A (en) 1980-05-24

Family

ID=15253191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13977878A Pending JPS5569263A (en) 1978-11-15 1978-11-15 Dry etching process

Country Status (1)

Country Link
JP (1) JPS5569263A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213877A (en) * 1982-06-05 1983-12-12 Anelva Corp Method for dry etching aluminum

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213877A (en) * 1982-06-05 1983-12-12 Anelva Corp Method for dry etching aluminum

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