JPS5569263A - Dry etching process - Google Patents
Dry etching processInfo
- Publication number
- JPS5569263A JPS5569263A JP13977878A JP13977878A JPS5569263A JP S5569263 A JPS5569263 A JP S5569263A JP 13977878 A JP13977878 A JP 13977878A JP 13977878 A JP13977878 A JP 13977878A JP S5569263 A JPS5569263 A JP S5569263A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- pattern
- gas
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
Abstract
PURPOSE: To increase etching speed, and to increase etching selection ratio of Si substrate or Si oxide coating, by etching Al (or Al alloy) coating in a gas plasma made by mixing Cl-contg. reactive gas with O2.
CONSTITUTION: An Si substrate 11 is coated with layers of a field oxidation film 12, a gate oxidation film 13, a gare electrode 14, then a contact hole 18 is formed by etching an SiO2 film 15 applied all over the substrate 11, simultaneously diffusion layers 16, 17 are formed. Over all the substrate is formed an Al film or an Al alloy film 19. A positive type photoresist is applied on the film 19, then a resist pattern 20 for wiring use is formed by the irradiation of ultraviolet rays. Successively, the portion of the film 19, which is not covered with the pattern 20 is etched by plasma discharge in a mixed gas of Cl-contg. reactive gas with O2 gas. The SiO2 film 15 and substrate under the film 19 are scarcely etched. Then the pattern 20 is removed to obtain a MOS type semiconductor unit having wiring pattern of Al film.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13977878A JPS5569263A (en) | 1978-11-15 | 1978-11-15 | Dry etching process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13977878A JPS5569263A (en) | 1978-11-15 | 1978-11-15 | Dry etching process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5569263A true JPS5569263A (en) | 1980-05-24 |
Family
ID=15253191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13977878A Pending JPS5569263A (en) | 1978-11-15 | 1978-11-15 | Dry etching process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5569263A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58213877A (en) * | 1982-06-05 | 1983-12-12 | Anelva Corp | Method for dry etching aluminum |
-
1978
- 1978-11-15 JP JP13977878A patent/JPS5569263A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58213877A (en) * | 1982-06-05 | 1983-12-12 | Anelva Corp | Method for dry etching aluminum |
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