JPS5451785A - Manufacture of mos-type semiconductor - Google Patents
Manufacture of mos-type semiconductorInfo
- Publication number
- JPS5451785A JPS5451785A JP11785477A JP11785477A JPS5451785A JP S5451785 A JPS5451785 A JP S5451785A JP 11785477 A JP11785477 A JP 11785477A JP 11785477 A JP11785477 A JP 11785477A JP S5451785 A JPS5451785 A JP S5451785A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- electrode
- gate
- film
- overlap margin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52117854A JPS5927098B2 (ja) | 1977-10-03 | 1977-10-03 | Mos型半導体集積回路の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52117854A JPS5927098B2 (ja) | 1977-10-03 | 1977-10-03 | Mos型半導体集積回路の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5451785A true JPS5451785A (en) | 1979-04-23 |
JPS5927098B2 JPS5927098B2 (ja) | 1984-07-03 |
Family
ID=14721924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52117854A Expired JPS5927098B2 (ja) | 1977-10-03 | 1977-10-03 | Mos型半導体集積回路の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5927098B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5650533A (en) * | 1979-10-01 | 1981-05-07 | Hitachi Ltd | Semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51145285A (en) * | 1975-06-09 | 1976-12-14 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS5261960A (en) * | 1975-11-18 | 1977-05-21 | Fujitsu Ltd | Production of semiconductor device |
-
1977
- 1977-10-03 JP JP52117854A patent/JPS5927098B2/ja not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51145285A (en) * | 1975-06-09 | 1976-12-14 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS5261960A (en) * | 1975-11-18 | 1977-05-21 | Fujitsu Ltd | Production of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5650533A (en) * | 1979-10-01 | 1981-05-07 | Hitachi Ltd | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5927098B2 (ja) | 1984-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57143858A (en) | Semiconductor integrated circuit | |
JPS5799777A (en) | Metal oxide semiconductor type semiconductor device | |
JPS5451785A (en) | Manufacture of mos-type semiconductor | |
JPS54156483A (en) | Non-volatile semiconductor memory device | |
JPS62262462A (ja) | 半導体装置 | |
JPS5727069A (en) | Mos type simiconductor device | |
JPS5522879A (en) | Insulation gate type field effect semiconductor device | |
JPS5889866A (ja) | 絶縁ゲ−ト半導体装置 | |
JPS5632757A (en) | Insulated gate type transistor and integrated circuit | |
JPS5459875A (en) | Semiconductor device | |
JPS5499578A (en) | Field effect transistor | |
JPS54114081A (en) | Semiconductor integrated circuit device | |
JPS5449063A (en) | Semiconductor device and its manufacture | |
JPS5673451A (en) | Manufacture of semiconductor device | |
JPS5291382A (en) | Insulating gate type field effect transistor | |
JPS5489594A (en) | Manufacture for integrated circuit | |
JPS52130580A (en) | High densityintegrated circuit device | |
JPS5797663A (en) | Complementary mos type semiconductor | |
JPS5558573A (en) | Manufacture of mis semiconductor device | |
JPS5491066A (en) | Field effect transistor of insulation gate type | |
JPS54121081A (en) | Integrated circuit device | |
JPS5465490A (en) | Integrated circuit and its manufacture | |
JPS5513947A (en) | Semiconductor integrated circuit device | |
JPS5563875A (en) | Manufacturing method of mis transistor | |
JPS5516456A (en) | Semiconductor integrated circuit |