JPH1174227A - 半導体装置および該装置を形成するためのプロセス - Google Patents

半導体装置および該装置を形成するためのプロセス

Info

Publication number
JPH1174227A
JPH1174227A JP10201197A JP20119798A JPH1174227A JP H1174227 A JPH1174227 A JP H1174227A JP 10201197 A JP10201197 A JP 10201197A JP 20119798 A JP20119798 A JP 20119798A JP H1174227 A JPH1174227 A JP H1174227A
Authority
JP
Japan
Prior art keywords
film
nitrogen
conductive
tin
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10201197A
Other languages
English (en)
Japanese (ja)
Inventor
Zan Jiming
ジミング・ザン
Dean J Denning
ディーン・ジェイ・デニング
E Friesa Larry
ラリー・イー・フリーサ
Chan Hakku-Rei
ハック−レイ・チャン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/887,654 external-priority patent/US6028003A/en
Priority claimed from US08/996,000 external-priority patent/US5893752A/en
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JPH1174227A publication Critical patent/JPH1174227A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP10201197A 1997-07-03 1998-07-01 半導体装置および該装置を形成するためのプロセス Pending JPH1174227A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/887,654 1997-07-03
US08/887,654 US6028003A (en) 1997-07-03 1997-07-03 Method of forming an interconnect structure with a graded composition using a nitrided target
US08/996,000 1997-12-22
US08/996,000 US5893752A (en) 1997-12-22 1997-12-22 Process for forming a semiconductor device

Publications (1)

Publication Number Publication Date
JPH1174227A true JPH1174227A (ja) 1999-03-16

Family

ID=27128852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10201197A Pending JPH1174227A (ja) 1997-07-03 1998-07-01 半導体装置および該装置を形成するためのプロセス

Country Status (3)

Country Link
JP (1) JPH1174227A (ko)
KR (1) KR100365061B1 (ko)
TW (1) TW380308B (ko)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000323432A (ja) * 1999-05-11 2000-11-24 Toshiba Corp スパッタターゲット、配線膜および電子部品
JP2002334882A (ja) * 2001-05-09 2002-11-22 Sony Corp 半導体装置およびその製造方法
KR100436134B1 (ko) * 1999-12-30 2004-06-14 주식회사 하이닉스반도체 반도체 소자의 금속배선 형성방법
JP2008098424A (ja) * 2006-10-12 2008-04-24 Rohm Co Ltd 半導体装置および半導体装置の製造方法
JP2008186926A (ja) * 2007-01-29 2008-08-14 Fujitsu Ltd 半導体装置とその製造方法
JP4763894B2 (ja) * 1999-04-27 2011-08-31 東京エレクトロン株式会社 ハロゲン化タンタル前駆物質からのｃｖｄ窒化タンタルプラグの形成
CN109671717A (zh) * 2017-10-17 2019-04-23 三星显示有限公司 金属线和薄膜晶体管
CN109800604A (zh) * 2017-11-16 2019-05-24 三星电子株式会社 硬件嵌入式安全系统及提供其的方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008044757A1 (en) 2006-10-12 2008-04-17 Ulvac, Inc. Conductive film forming method, thin film transistor, panel with thin film transistor and thin film transistor manufacturing method
CN105140199B (zh) * 2015-08-11 2018-06-29 上海华虹宏力半导体制造有限公司 顶层金属薄膜结构以及铝制程工艺方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03156928A (ja) * 1989-11-15 1991-07-04 Fujitsu Ltd 半導体装置及びその製造方法
JPH0786397A (ja) * 1993-09-14 1995-03-31 Matsushita Electron Corp 半導体装置の製造方法
JPH07193025A (ja) * 1993-11-22 1995-07-28 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH07283219A (ja) * 1994-04-13 1995-10-27 Sanyo Electric Co Ltd 半導体装置および半導体装置の製造方法および半導体装 置の製造装置
JPH08139090A (ja) * 1994-11-10 1996-05-31 Nec Corp 半導体集積回路装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5231053A (en) * 1990-12-27 1993-07-27 Intel Corporation Process of forming a tri-layer titanium coating for an aluminum layer of a semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03156928A (ja) * 1989-11-15 1991-07-04 Fujitsu Ltd 半導体装置及びその製造方法
JPH0786397A (ja) * 1993-09-14 1995-03-31 Matsushita Electron Corp 半導体装置の製造方法
JPH07193025A (ja) * 1993-11-22 1995-07-28 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH07283219A (ja) * 1994-04-13 1995-10-27 Sanyo Electric Co Ltd 半導体装置および半導体装置の製造方法および半導体装 置の製造装置
JPH08139090A (ja) * 1994-11-10 1996-05-31 Nec Corp 半導体集積回路装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4763894B2 (ja) * 1999-04-27 2011-08-31 東京エレクトロン株式会社 ハロゲン化タンタル前駆物質からのｃｖｄ窒化タンタルプラグの形成
JP2000323432A (ja) * 1999-05-11 2000-11-24 Toshiba Corp スパッタターゲット、配線膜および電子部品
KR100436134B1 (ko) * 1999-12-30 2004-06-14 주식회사 하이닉스반도체 반도체 소자의 금속배선 형성방법
JP2002334882A (ja) * 2001-05-09 2002-11-22 Sony Corp 半導体装置およびその製造方法
JP2008098424A (ja) * 2006-10-12 2008-04-24 Rohm Co Ltd 半導体装置および半導体装置の製造方法
WO2008047687A1 (en) * 2006-10-12 2008-04-24 Rohm Co., Ltd. Semiconductor device and semiconductor device manufacturing method
US8125084B2 (en) 2006-10-12 2012-02-28 Rohm Co., Ltd. Semiconductor device and semiconductor device manufacturing method
JP2008186926A (ja) * 2007-01-29 2008-08-14 Fujitsu Ltd 半導体装置とその製造方法
CN109671717A (zh) * 2017-10-17 2019-04-23 三星显示有限公司 金属线和薄膜晶体管
CN109800604A (zh) * 2017-11-16 2019-05-24 三星电子株式会社 硬件嵌入式安全系统及提供其的方法
CN109800604B (zh) * 2017-11-16 2024-05-07 三星电子株式会社 硬件嵌入式安全系统及提供其的方法

Also Published As

Publication number Publication date
TW380308B (en) 2000-01-21
KR100365061B1 (ko) 2003-04-26
KR19990013553A (ko) 1999-02-25

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Effective date: 20020621