CN109671717A - 金属线和薄膜晶体管 - Google Patents

金属线和薄膜晶体管 Download PDF

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CN109671717A
CN109671717A CN201811195676.5A CN201811195676A CN109671717A CN 109671717 A CN109671717 A CN 109671717A CN 201811195676 A CN201811195676 A CN 201811195676A CN 109671717 A CN109671717 A CN 109671717A
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coating
metal wire
nitrogen
titanium
layer
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李东敏
申相原
申铉亿
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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Abstract

提供了一种金属线和一种薄膜晶体管。所述金属线包括：导电层,包含铝(Al)或铝合金；第一覆盖层，位于导电层上，第一覆盖层包含氮化钛(TiNx)；以及第二覆盖层，位于第一覆盖层上，第二覆盖层包含钛(Ti)。

Description

金属线和薄膜晶体管
于2017年10月17日在韩国知识产权局提交的名称为“金属线和薄膜晶体管”的第10-2017-0134845号韩国专利申请通过引用全部包含于此。
技术领域
实施例涉及一种金属线和包括该金属线的薄膜晶体管。
背景技术
诸如有机发光显示装置或液晶显示装置的显示装置包括作为用于图像输出的驱动和控制元件的薄膜晶体管(TFT)。薄膜晶体管可包括诸如用于传输电信号的栅极线或数据线的金属线。
发明内容
实施例涉及一种金属线，所述金属线包括：导电层,包含铝(Al)或铝合金；第一覆盖层，位于导电层上，第一覆盖层包含氮化钛(TiNx)；以及第二覆盖层，位于第一覆盖层上，第二覆盖层包含钛(Ti)。
导电层可包括包含镍(Ni)、镧(La)、钕(Nd)和锗(Ge)中的至少一种的铝合金。
包含在第一覆盖层中的氮与钛的原子比为0.9至1.2，所述原子比由下式表示：氮原子数/钛原子数。
导电层和第一覆盖层可彼此接触。
第一覆盖层和第二覆盖层可彼此接触。
第一覆盖层的较靠近导电层的部分中的氮原子的含量可高于第一覆盖层的较靠近第二覆盖层的部分中的氮原子的含量。金属线还可包括位于第二覆盖层上的第三覆盖层，第三覆盖层包含氮化钛。
第三覆盖层的朝向第二覆盖层的部分中的氮原子的含量低于第三覆盖层的较靠近与第二覆盖层相对的一侧的部分中的氮原子的含量。
第一覆盖层中的氮原子的含量可不同于第三覆盖层中的氮原子的含量。
实施例也涉及一种薄膜晶体管，所述薄膜晶体管包括通过绝缘膜彼此电隔离的栅极金属层和数据金属层。栅极金属层和/或数据金属层包括：导电层，包含铝(Al)或铝合金；第一覆盖层，位于导电层上，第一覆盖层包含氮化钛(TiNx)；以及第二覆盖层，位于第一覆盖层上，第二覆盖层包含钛(Ti)。
包含在第一覆盖层中的氮和钛的原子比可以为0.9至1.2，所述原子比由下式表示：氮原子数/钛原子数。
栅极金属层和/或数据金属层还可包括位于第二覆盖层上的第三覆盖层，第三覆盖层包含氮化钛。
第一覆盖层中的氮原子的含量可不同于第三覆盖层中的氮原子的含量。
实施例也涉及一种制造金属线的方法，所述方法包括在铝(Al)膜或铝合金膜上形成氮化钛(TiNx)膜以及在氮化钛膜上形成钛(Ti)膜。
包含在氮化钛膜中的氮和钛的原子比可以为0.9至1.2，所述原子比由下式表示：氮原子数/钛原子数。
可使用钛和氮气(N2)通过溅射形成氮化钛膜。
可通过其中在形成氮化钛膜的同时仅停止氮气的供应的连续溅射来形成钛膜。
在溅射期间可另外供应惰性气体。在溅射期间氮气的供应量可大于惰性气体的供应量。
所述方法还可包括在钛膜上形成亚氮化钛膜。
可通过溅射形成钛膜。可通过其中在形成钛膜的同时另外供应氮气的连续溅射来形成亚氮化钛膜。
附图说明
通过参照附图详细描述示例性实施例，特征对于本领域技术人员而言将变得明显，在附图中：
图1示出了根据实施例的金属线的剖视图；
图2至图4示出了根据其它实施例的金属线的剖视图；
图5示出了根据实施例的薄膜晶体管基底的剖视图；以及
图6至图11示出了根据工艺步骤制造图1和图3中所示的金属线的方法的阶段的剖视图。
具体实施方式
现在将参照附图在下文中更充分地描述示例实施例；然而，示例实施例可以以不同的形式来实施，并且不应该被解释为限于在此阐述的实施例。相反，提供这些实施例使得本公开将是彻底的和完整的，并将向本领域技术人员充分地传达示例性实施方式。
在附图中，为了说明的清楚性，层和区域的尺寸可以被夸大。同样的附图标记始终表示同样的元件。
图1示出了根据实施例的金属线200的剖视图。
参照图1，金属线200可设置在基体构件100上并可包括导电层210和覆盖层220。
通过提供其上可以设置金属线200的空间，基体构件100可支撑金属线200。基体构件100的上表面可以是接触金属线200的基体表面。术语“基体构件”可以指能够支撑金属线200的任何构件。作为示例，金属线200可直接设置在基体构件100上。由基体构件100支撑的另一构件也可设置在金属线200与基体构件100之间。
在示例性实施例中，金属线200可以是构成薄膜晶体管的栅极线或数据线。在这种情况下，基体构件100可以是作为薄膜晶体管的基体基底的玻璃基底或聚合物基底。在一些实施方式中，基体构件100可以是直接支撑金属线200的缓冲层或绝缘层。
金属线200可具有包括导电层210和覆盖层220的多层结构。导电层210可以是设置在基体构件100的上侧的层。
作为赋予金属线200导电性的层的导电层210可包含铝(Al)或铝合金。铝合金可包含作为添加剂材料的镍(Ni)、镧(La)、钕(Nd)和锗(Ge)中的至少一种和作为基体材料的铝(Al)。诸如镍(Ni)的添加剂材料可以以例如2at％(原子百分比)或更少的量被包含。
与具有表面电阻为大约0.55Ω/□(基于的厚度)的钼(Mo)相比，铝是具有表面电阻为大约0.15Ω/□(基于的厚度)的相对低电阻材料。因此，包含铝或铝合金的导电层210可具有足够的导电性。
覆盖层220可设置在导电层210上。覆盖层220可具有多层结构，并可包括设置在导电层210上的第一覆盖层220a和设置在第一覆盖层220a上的第二覆盖层220b。
第一覆盖层220a可直接设置在导电层210上以接触导电层210，并可基本上覆盖导电层210的上表面。第一覆盖层220a可包含氮化钛(TiNx)。
如上所述，导电层210可由包括铝的材料制成。然而，如果导电层210仅由铝形成，则由于诸如激活薄膜晶体管的半导体层的工艺的高温(400℃至580℃)工艺或由于诸如形成接触孔的工艺的产生等离子体的后续工艺，导致可以出现小丘，从而造成导电层210的电阻增大。
如果用钛(Ti)覆盖导电层210的上表面，则可以防止出现小丘。然而在这种情况下，在后续高温工艺期间铝和钛之间的界面处可以发生扩散，使得形成铝-钛合金，从而增大导电层210的电阻。此外，在这种情况下，由于氢氟酸(HF)在诸如缓冲氧化物蚀刻(BOE)工艺的清洗工艺期间用作清洗液，导致可以发生对铝和钛的损伤。
因此，可以用构成第一覆盖层220a的氮化钛覆盖导电层210，以防止导电层210出现小丘并防止导电层210和覆盖层220发生损伤。此外，能够防止铝与钛之间出现扩散现象，使得导电层210与第一覆盖层220a之间的界面处不形成诸如Al3Ti的铝-钛合金，或仅以微量形成铝-钛合金。
第一覆盖层220a的厚度可以为大约至大约当第一覆盖层220a的厚度为或更大时，能够抑制由后续BOE工艺引起的损伤并防止由于铝-钛扩散而导致的电阻的增大。此外，当第一覆盖层220a的厚度为或更小时，可避免薄膜工艺中的低效率。
包含在第一覆盖层220a中的氮(N)和钛(Ti)的原子比(氮原子数/钛原子数)可以为大约0.9至大约1.2。当氮(N)与钛(Ti)的原子比为0.9或更大时，可有效地防止铝-钛合金的形成。此外，当氮(N)与钛(Ti)的原子比为1.2或更小时，如下所述，可抑制第一覆盖层220a中的颗粒的产生。
无论在第一覆盖层220a中的位置如何，包含在第一覆盖层220a中的氮原子的比例可以是基本上均匀的。在一些实施方式中，根据在第一覆盖层220a的厚度方向上的位置，氮原子可具有不同的分布。
第二覆盖层220b可直接设置在第一覆盖层220a上以接触第一覆盖层220a。第二覆盖层220b可设置为基本上覆盖第一覆盖层220a的上表面。第二覆盖层220b可包含钛。
如上所述，当第一覆盖层220a由氮化钛制成时，能够防止铝与钛之间发生扩散或损伤。然而，随着氮的比例在形成氮化钛的工艺期间增大，颗粒可以大量产生，从而引起不利的结果。可通过在第一覆盖层220a上形成由钛制成的第二覆盖层220b来稳定颗粒产生的程度。
可通过溅射形成第一覆盖层220a和第二覆盖层220b。例如，可通过其中第二覆盖层220b连续地形成在第一覆盖层220a上的连续溅射来形成第一覆盖层220a和第二覆盖层220b。
图2示出了根据另一实施例的金属线201的剖视图。
除包含在覆盖层221中的氮原子的比例在厚度方向上逐渐改变之外，图2的金属线201与已经参照图1所描述的金属线200相同。在下文中，将不重复多余的描述。
参照图2，覆盖层221可包含氮化钛和钛，并且覆盖层221中氮原子的比例可在向上的方向上(例如，在远离导电层210的方向上)逐渐减小。因此，覆盖层221可被分成包含氮化钛的第一覆盖层221a和仅包含钛而不含氮原子的第二覆盖层221b。此外，包含在第一覆盖层221a中的氮化钛中的氮原子的比例可朝向第二覆盖层221b逐渐减小。
例如，覆盖层221可以是其中氮化钛和钛连续存在的集成层。例如，可通过其中氮的供应逐渐减少的连续溅射来形成这种覆盖层221。
图3示出了根据另一实施例的金属线202的剖视图。
除图3的金属线202还包括设置在第二覆盖层222b上的第三覆盖层222c之外，图3的金属线202可与参照图1所描述的金属线200相同。在下文中，将不重复多余的描述。
参照图3，第三覆盖层222c可直接设置在第二覆盖层222b上以接触第二覆盖层222b。第三覆盖层222c可设置为基本上覆盖第二覆盖层222b的上表面。第三覆盖层222c可包括氮化钛。
如上所述，在后续工艺中存在钛可以被清洗液等损坏的风险。通过在第二覆盖层222b上另外提供包含氮化钛的第三覆盖层222c，可以保护包含钛的第二覆盖层222b。
第一覆盖层222a中氮原子的比例和第三覆盖层222c中氮原子的比例可以彼此相同或不同。在示例性实施例中，如果第一覆盖层222a上设置有能够稳定颗粒的形成的第二覆盖层222b，则第一覆盖层222a可形成为使得氮化钛中氮的比例高。相反，如果第三覆盖层222c上没有设置单独的钛层，则第三覆盖层222c可形成为使得氮化钛中的氮的比例低。
第三覆盖层222c的厚度可以为大约至大约当第三覆盖层222c的厚度在上述范围内时，可有效地抑制由于后续BOE工艺而导致的损坏。
图4示出了根据另一实施例的金属线203的剖视图。
除包含在覆盖层223中的氮原子的比例在厚度方向上逐渐改变之外，图4的金属线203可与参照图3所描述的金属线202相同。在下文中，将不重复多余的描述。
参照图4，与图2的实施例相似，覆盖层223可包含氮化钛和钛，并且覆盖层223中的氮原子的比例可在向上的方向上(例如，在远离导电层210的方向上)逐渐减小，然后再次增大。因此，可以认为覆盖层223被分成包含氮化钛的第一覆盖层223a、仅包含钛而不含氮原子的第二覆盖层223b以及包含氮化钛的第三覆盖层223c。包含在第一覆盖层223a中的氮化钛中的氮原子的比例可以在朝向第二覆盖层223b的方向上逐渐减小，并且包含在第三覆盖层223c中的氮化钛中的氮原子的比例可在远离第二覆盖层223b的方向上逐渐增大。
例如，图4的覆盖层223可以是其中氮化钛和钛连续存在的集成层。可通过其中氮的供应逐渐减小然后增大的连续溅射来形成这种覆盖层223。
图5示出了根据实施例的薄膜晶体管基底1000的剖视图。
参照图5，薄膜晶体管基底1000可包括基体基底10、缓冲层20、半导体层30、第一绝缘层40、栅极金属层50、第二绝缘层60、平坦化层70和数据金属层80。
基体基底10可提供其上设置有构成薄膜晶体管基底1000的元件的空间。基体基底10可以是例如玻璃基底或具有柔性的聚合物基底。
缓冲层20可设置在基体基底10上。缓冲层20可包含氮化硅(SiNx)、氧化硅(SiOx)、氮氧化硅(SiOxNy)等，并可形成为单层或多层。缓冲层20可防止可以使半导体的特性劣化的杂质、湿气或外部空气的渗透，并可提供表面平坦化。
半导体层30可设置在缓冲层20上。半导体层30可包括沟道区30b以及位于沟道区30b的两个横向侧的源区30a和漏区30c。沟道区30b可包含本征半导体，例如，未掺杂杂质的多晶硅。源区30a和漏区30c中的每个可包含杂质半导体，例如，掺杂有杂质的多晶硅。
第一绝缘层40可设置在半导体层30上。第一绝缘层40可包括氮化硅、氧化硅、氮氧化硅等。第一绝缘层40可形成为单层或多层。
栅极金属层50可设置在第一绝缘层40上。栅极金属层50可包括栅极线、栅电极、栅极垫(pad，或称为“焊盘”或“焊垫”)等。图5示出了对应于栅极金属层50的栅电极的部分。栅电极可设置为与半导体层30的沟道区30b叠置。
栅极金属层50可具有诸如图1至图4中所示的结构中任一种的金属线结构。例如，栅极金属层50可包括导电层51和设置在导电层51上的覆盖层52。覆盖层52可包括第一覆盖层52a和设置在第一覆盖层52a上的第二覆盖层52b。
第二绝缘层60可设置在栅极金属层50上。第二绝缘层60可包含氮化硅、氧化硅、氮氧化硅等，并可形成为单层或多层。第二绝缘层60可将栅极金属层50与设置在其上的数据金属层80电隔离。
平坦化层70可设置在第二绝缘层60上。平坦化层70可用作绝缘膜，并且也可提供表面平坦化。
数据金属层80可设置在平坦化层70上。数据金属层80可包括数据线、数据垫(pad，或称为“焊盘”或“焊垫”)和源/漏电极。图5示出了对应于数据金属层80的源/漏电极的部分。源/漏电极可设置为分别与半导体层30的源区30a和漏区30c叠置。
用于将数据金属层80的源/漏电极分别与半导体层30的源区30a和漏区30c电连接的接触孔h可形成在第一绝缘层40、第二绝缘层60和平坦化层70中。
半导体层30、栅极金属层50和数据金属层80可构成薄膜晶体管Tr。例如，栅极金属层50的栅电极可以是薄膜晶体管Tr的控制端子，数据金属层80的源/漏电极可以是薄膜晶体管Tr的输入端子。
类似于栅极金属层50，数据金属层80可具有图1至图4中所示的结构中的任一种结构。例如，数据金属层80可包括导电层81和设置在导电层81上的覆盖层82。覆盖层82可包括第一覆盖层82a和设置在第一覆盖层82a上的第二覆盖层82b。
虽然图5中示出了栅极金属层50和数据金属层80都具有根据实施例的金属线200结构，但是在一些实施方式中，仅栅极金属层50可具有上述金属线200结构，或仅数据金属层80可具有上述金属线200结构。例如，栅极金属层50和数据金属层80可形成为具有彼此独立的结构。
薄膜晶体管基底1000可以是包括在显示装置中的元件。例如，诸如包括有机发光层的有机发光元件或包括液晶层的液晶显示元件的显示元件可设置在薄膜晶体管基底1000上。
当包括在薄膜晶体管基底1000中的栅极金属层50和/或数据金属层80具有上述金属线200结构时，栅极金属层50和/或数据金属层80可稳定地表现出低电阻特性。薄膜晶体管基底1000可适当地应用于实现高分辨率的显示装置。
图6至图9示出了根据工艺步骤制造如图1中所示的金属线200的方法的阶段的剖视图。
参照图6，可通过合适的方法在基体构件100上形成铝膜或铝合金膜1。
参照图7，可在铝膜或铝合金膜1上形成氮化钛膜2。可通过溅射形成氮化钛膜2。
例如，可通过向其中放置有铝膜或铝合金膜1的溅射室中供应钛、氮气和惰性气体并施加电压来形成氮化钛膜2。可通过供应比惰性气体更大量的氮气，在富氮条件下形成氮化钛膜2。因此，氮化钛膜2中氮与钛的原子比(氮原子数/钛原子数)可调节到0.9至1.2的水平。惰性气体可以是氩(Ar)、氦(He)等。
参照图8，可在氮化钛膜2上形成钛膜3。可通过溅射形成钛膜3。例如，可通过连续溅射形成钛膜3。
当在通过供应钛和氮气进行溅射来形成氮化钛膜2的同时停止氮气的供应时，在相同的溅射室中钛膜3可连续地形成在氮化钛膜2上(连续溅射)。当氮气的供应逐渐减少时，如图2中所示，也可形成具有连续的氮分布的覆盖层221结构。
参照图9，同时蚀刻铝膜(或铝合金膜)1、氮化钛膜2和钛膜3，以制造图1的金属线200，该金属线200具有预定的铝膜(或铝合金膜)图案210、氮化钛膜图案220a和钛膜图案220b。
图6至图8、图10和图11是根据工艺步骤制造图3中所示的金属线202的方法的剖视图。
参照图6至图8，可通过连续溅射在铝膜或铝合金膜1上形成氮化钛膜2和钛膜3。由于以上已经描述了该工艺，因此将不重复其详细描述。
参照图10，在钛膜3上形成亚氮化钛膜4。可通过溅射形成亚氮化钛膜4。例如，可通过连续溅射形成亚氮化钛膜4。
例如，当在通过供应钛和惰性气体进行溅射来形成钛膜3的同时另外供应氮气时，在相同溅射室中亚氮化钛膜4可连续地形成在钛膜3上(连续溅射)。此外，当氮气的供应逐渐减小然后逐渐增大时，可形成如图4所示的具有连续氮分布的覆盖层223结构。
参照图11，可同时蚀刻铝膜(或铝合金膜)1、氮化钛膜2、钛膜3和亚氮化钛膜4，以制造图3的金属线202，该金属线202具有包括铝膜(或铝合金膜)图案210、氮化钛膜图案222a、钛膜图案222b和亚氮化钛膜图案222c的预定图案。
通过总结和回顾，薄膜晶体管可包括诸如用于传输电信号的栅极线或数据线的金属线。通常，钼(Mo)已经被用作构成这种金属线的导电金属。然而，当使钼层的厚度变更薄以减小薄膜晶体管的厚度时，电阻增大。因此，在薄的高分辨率显示装置中使用钼(Mo)是不利的。
与钼相比，铝(Al)基金属线可具有相对低的电阻。然而，在后续工艺期间铝膜会易受损伤的影响。
根据实施例，通过在包含铝或铝合金的导电层上形成包含氮化钛(TiNx)和钛(Ti)的覆盖层，能够在金属线中稳定地提供低电阻特性。薄膜晶体管可包括金属线。
这里已经公开了示例实施例，并且虽然采用了特定术语，但是仅以一般性和描述性意义来使用和解释这些术语，而不是出于限制的目的。在一些情况下，如自提交本申请时对本领域普通技术人员将明显的，结合具体实施例描述的特征、特性和/或元件可以单独使用或与结合其它实施例描述的特征、特性和/或元件组合使用，除非另有明确说明。因此，本领域技术人员将理解的是，在不脱离如由权利要求中阐述的本发明的精神和范围的情况下，可以做出形式和细节上的各种改变。

Claims (10)

1.一种金属线，所述金属线包括：
导电层，包含铝或铝合金；
第一覆盖层，位于所述导电层上，所述第一覆盖层包含氮化钛；以及
第二覆盖层，位于所述第一覆盖层上，所述第二覆盖层包含钛。
2.根据权利要求1所述的金属线，其中：
所述导电层包含所述铝合金，并且
所述铝合金包括镍、镧、钕和锗中的至少一种。
3.根据权利要求1所述的金属线，
其中，包含在所述第一覆盖层中的氮和钛的原子比为0.9至1.2，所述原子比由下式表示：氮原子数/钛原子数。
4.根据权利要求1所述的金属线，
其中，所述导电层和所述第一覆盖层彼此接触。
5.根据权利要求1所述的金属线，
其中，所述第一覆盖层和所述第二覆盖层彼此接触。
6.根据权利要求1所述的金属线，
其中，所述第一覆盖层的较靠近所述导电层的部分中的氮原子的含量高于所述第一覆盖层的较靠近所述第二覆盖层的部分中氮原子的含量。
7.根据权利要求1所述的金属线，所述金属线还包括：
第三覆盖层，位于所述第二覆盖层上，所述第三覆盖层包含氮化钛。
8.根据权利要求7所述的金属线，
其中，所述第三覆盖层的较靠近所述第二覆盖层的部分中的氮原子的含量低于所述第三覆盖层的较靠近与所述第二覆盖层相对的一侧的部分中的氮原子的含量。
9.根据权利要求7所述的金属线，
其中，所述第一覆盖层中的氮原子的含量不同于所述第三覆盖层中的氮原子的含量。
10.一种薄膜晶体管，所述薄膜晶体管包括：
栅极金属层和数据金属层，通过绝缘膜彼此电隔离，
其中，所述栅极金属层和/或所述数据金属层包括：
导电层，包含铝或铝合金；
第一覆盖层，位于所述导电层上，所述第一覆盖层包含氮化钛；以及
第二覆盖层，位于所述第一覆盖层上，所述第二覆盖层包含钛。
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