JPH1168061A5 - - Google Patents

Info

Publication number
JPH1168061A5
JPH1168061A5 JP1997216697A JP21669797A JPH1168061A5 JP H1168061 A5 JPH1168061 A5 JP H1168061A5 JP 1997216697 A JP1997216697 A JP 1997216697A JP 21669797 A JP21669797 A JP 21669797A JP H1168061 A5 JPH1168061 A5 JP H1168061A5
Authority
JP
Japan
Prior art keywords
film
oxide film
treatment
conductive film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997216697A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1168061A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9216697A priority Critical patent/JPH1168061A/ja
Priority claimed from JP9216697A external-priority patent/JPH1168061A/ja
Priority to US09/009,966 priority patent/US5963815A/en
Priority to TW087101876A priority patent/TW411617B/zh
Priority to KR1019980006796A priority patent/KR19990023080A/ko
Priority to DE19809270A priority patent/DE19809270A1/de
Publication of JPH1168061A publication Critical patent/JPH1168061A/ja
Publication of JPH1168061A5 publication Critical patent/JPH1168061A5/ja
Pending legal-status Critical Current

Links

JP9216697A 1997-07-08 1997-08-11 粗面化導電性膜の形成方法及び半導体装置 Pending JPH1168061A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9216697A JPH1168061A (ja) 1997-08-11 1997-08-11 粗面化導電性膜の形成方法及び半導体装置
US09/009,966 US5963815A (en) 1997-07-08 1998-01-21 Method for forming a surface-roughened conductive film on a semiconductor wafer
TW087101876A TW411617B (en) 1997-08-11 1998-02-11 Forming method for the roughened conductive film and the semiconductor apparatus
KR1019980006796A KR19990023080A (ko) 1997-08-11 1998-03-02 조면화 도전성막의 형성방법및 반도체 장치
DE19809270A DE19809270A1 (de) 1997-08-11 1998-03-04 Bildungsverfahren eines leitenden Filmes mit aufgerauhter Oberfläche und Halbleitereinrichtung mit einem leitenden Film mit aufgerauhter Oberfläche

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9216697A JPH1168061A (ja) 1997-08-11 1997-08-11 粗面化導電性膜の形成方法及び半導体装置

Publications (2)

Publication Number Publication Date
JPH1168061A JPH1168061A (ja) 1999-03-09
JPH1168061A5 true JPH1168061A5 (enExample) 2004-08-12

Family

ID=16692510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9216697A Pending JPH1168061A (ja) 1997-07-08 1997-08-11 粗面化導電性膜の形成方法及び半導体装置

Country Status (5)

Country Link
US (1) US5963815A (enExample)
JP (1) JPH1168061A (enExample)
KR (1) KR19990023080A (enExample)
DE (1) DE19809270A1 (enExample)
TW (1) TW411617B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW408447B (en) * 1999-01-04 2000-10-11 United Microelectronics Corp The formation method of semispherical grained silicon (HSG-Si)
JP2000340644A (ja) * 1999-05-27 2000-12-08 Mitsubishi Electric Corp 半導体装置の製造方法
US20040206998A1 (en) * 2002-08-26 2004-10-21 Renesas Technology Corp. Semiconductor device having a roughened surface electrode and method of manufacturing the same
KR102424963B1 (ko) 2015-07-30 2022-07-25 삼성전자주식회사 집적회로 소자 및 그 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2894361B2 (ja) * 1990-02-16 1999-05-24 三菱電機株式会社 半導体装置およびその製造方法
JPH04290219A (ja) * 1991-03-19 1992-10-14 Nec Corp 多結晶シリコン膜の形成方法
JP3034327B2 (ja) * 1991-03-25 2000-04-17 宮崎沖電気株式会社 キャパシタ電極の形成方法
JP3071284B2 (ja) * 1991-12-20 2000-07-31 宮崎沖電気株式会社 半導体素子の製造方法
JPH05343337A (ja) * 1992-06-10 1993-12-24 Fujitsu Ltd 半導体装置の製造方法
US5811344A (en) * 1997-01-27 1998-09-22 Mosel Vitelic Incorporated Method of forming a capacitor of a dram cell

Similar Documents

Publication Publication Date Title
KR101691717B1 (ko) 다중 막층을 갖는 스페이서를 형성하기 위한 에칭 방법
TW399255B (en) Control of SiO2 etch rate using dilute chemical etchants in the presence of a megasonic field
JPH1116866A5 (enExample)
JP2004519088A5 (ja) 枚葉プロセスにおける基板の洗浄方法及び洗浄液
JP2001015612A5 (enExample)
US5674357A (en) Semiconductor substrate cleaning process
CN102931073A (zh) 一种半导体器件的制作方法
CN104752551A (zh) 一种太阳能硅片的清洗方法
TW478062B (en) A method of surface treatment on the improvement of electrical properties for doped SiO2 films
TW508691B (en) Cleaning method after etching metal layer
TWI316737B (en) Method for manufacturting gate electrode for use in semiconductor device
JPH1168061A5 (enExample)
US20100167543A1 (en) Method for manufacturing semiconductor device
TWI238925B (en) Resist stripping composition and method of producing semiconductor device using the same
JPH07161689A (ja) ドライエッチング方法
TW200522193A (en) Method to remove fluorine residue from bond pads
JP2000077356A (ja) 自己整列ケイ化の方法
JP2906416B2 (ja) シリコンのエッチング方法
JP2001223363A (ja) 薄膜トランジスタの製造方法
JP2001319914A (ja) 半導体デバイスの製造方法
JP2843946B2 (ja) シリコン基板表面の清浄化方法
JPH1168061A (ja) 粗面化導電性膜の形成方法及び半導体装置
JP4585205B2 (ja) 半導体装置の製造方法
KR0139723B1 (ko) 갈륨비소 표면의 경면처리방법
CN106298494B (zh) 一种多晶硅刻蚀方法