KR19990023080A - 조면화 도전성막의 형성방법및 반도체 장치 - Google Patents

조면화 도전성막의 형성방법및 반도체 장치 Download PDF

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Publication number
KR19990023080A
KR19990023080A KR1019980006796A KR19980006796A KR19990023080A KR 19990023080 A KR19990023080 A KR 19990023080A KR 1019980006796 A KR1019980006796 A KR 1019980006796A KR 19980006796 A KR19980006796 A KR 19980006796A KR 19990023080 A KR19990023080 A KR 19990023080A
Authority
KR
South Korea
Prior art keywords
storage node
oxide film
roughening
film
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019980006796A
Other languages
English (en)
Korean (ko)
Inventor
요시히코 오카모토
히로시 오니시
겐이치 하나오카
시게키 나카지마
준이치 츠치모토
타다시 요시다
Original Assignee
요시토미 마사오
료덴 세미컨덕터 시스템 엔지니어링 (주)
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 요시토미 마사오, 료덴 세미컨덕터 시스템 엔지니어링 (주), 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 요시토미 마사오
Publication of KR19990023080A publication Critical patent/KR19990023080A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019980006796A 1997-08-11 1998-03-02 조면화 도전성막의 형성방법및 반도체 장치 Ceased KR19990023080A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9216697A JPH1168061A (ja) 1997-08-11 1997-08-11 粗面化導電性膜の形成方法及び半導体装置
JP216697 1999-07-30

Publications (1)

Publication Number Publication Date
KR19990023080A true KR19990023080A (ko) 1999-03-25

Family

ID=16692510

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980006796A Ceased KR19990023080A (ko) 1997-08-11 1998-03-02 조면화 도전성막의 형성방법및 반도체 장치

Country Status (5)

Country Link
US (1) US5963815A (enExample)
JP (1) JPH1168061A (enExample)
KR (1) KR19990023080A (enExample)
DE (1) DE19809270A1 (enExample)
TW (1) TW411617B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW408447B (en) * 1999-01-04 2000-10-11 United Microelectronics Corp The formation method of semispherical grained silicon (HSG-Si)
JP2000340644A (ja) * 1999-05-27 2000-12-08 Mitsubishi Electric Corp 半導体装置の製造方法
US20040206998A1 (en) * 2002-08-26 2004-10-21 Renesas Technology Corp. Semiconductor device having a roughened surface electrode and method of manufacturing the same
KR102424963B1 (ko) 2015-07-30 2022-07-25 삼성전자주식회사 집적회로 소자 및 그 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2894361B2 (ja) * 1990-02-16 1999-05-24 三菱電機株式会社 半導体装置およびその製造方法
JPH04290219A (ja) * 1991-03-19 1992-10-14 Nec Corp 多結晶シリコン膜の形成方法
JP3034327B2 (ja) * 1991-03-25 2000-04-17 宮崎沖電気株式会社 キャパシタ電極の形成方法
JP3071284B2 (ja) * 1991-12-20 2000-07-31 宮崎沖電気株式会社 半導体素子の製造方法
JPH05343337A (ja) * 1992-06-10 1993-12-24 Fujitsu Ltd 半導体装置の製造方法
US5811344A (en) * 1997-01-27 1998-09-22 Mosel Vitelic Incorporated Method of forming a capacitor of a dram cell

Also Published As

Publication number Publication date
DE19809270A1 (de) 1999-02-25
TW411617B (en) 2000-11-11
JPH1168061A (ja) 1999-03-09
US5963815A (en) 1999-10-05

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