JPH1116866A5 - - Google Patents

Info

Publication number
JPH1116866A5
JPH1116866A5 JP1997187326A JP18732697A JPH1116866A5 JP H1116866 A5 JPH1116866 A5 JP H1116866A5 JP 1997187326 A JP1997187326 A JP 1997187326A JP 18732697 A JP18732697 A JP 18732697A JP H1116866 A5 JPH1116866 A5 JP H1116866A5
Authority
JP
Japan
Prior art keywords
pure water
silicon
oxide film
added
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997187326A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1116866A (ja
JP4001662B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP18732697A priority Critical patent/JP4001662B2/ja
Priority claimed from JP18732697A external-priority patent/JP4001662B2/ja
Priority to US09/103,813 priority patent/US6235122B1/en
Publication of JPH1116866A publication Critical patent/JPH1116866A/ja
Priority to US09/832,866 priority patent/US6696326B2/en
Publication of JPH1116866A5 publication Critical patent/JPH1116866A5/ja
Application granted granted Critical
Publication of JP4001662B2 publication Critical patent/JP4001662B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP18732697A 1997-06-27 1997-06-27 シリコンの洗浄方法および多結晶シリコンの作製方法 Expired - Lifetime JP4001662B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP18732697A JP4001662B2 (ja) 1997-06-27 1997-06-27 シリコンの洗浄方法および多結晶シリコンの作製方法
US09/103,813 US6235122B1 (en) 1997-06-27 1998-06-24 Cleaning method and cleaning apparatus of silicon
US09/832,866 US6696326B2 (en) 1997-06-27 2001-04-12 Cleaning method to prevent watermarks

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18732697A JP4001662B2 (ja) 1997-06-27 1997-06-27 シリコンの洗浄方法および多結晶シリコンの作製方法

Publications (3)

Publication Number Publication Date
JPH1116866A JPH1116866A (ja) 1999-01-22
JPH1116866A5 true JPH1116866A5 (enExample) 2005-03-17
JP4001662B2 JP4001662B2 (ja) 2007-10-31

Family

ID=16204051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18732697A Expired - Lifetime JP4001662B2 (ja) 1997-06-27 1997-06-27 シリコンの洗浄方法および多結晶シリコンの作製方法

Country Status (2)

Country Link
US (2) US6235122B1 (enExample)
JP (1) JP4001662B2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7402467B1 (en) 1999-03-26 2008-07-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6328814B1 (en) * 1999-03-26 2001-12-11 Applied Materials, Inc. Apparatus for cleaning and drying substrates
AU772539B2 (en) * 1999-07-29 2004-04-29 Kaneka Corporation Method for cleaning photovoltaic module and cleaning apparatus
US6221164B1 (en) * 2000-01-25 2001-04-24 Advanced Micro Devices, Inc. Method of in-situ cleaning for LPCVD teos pump
JP2001267281A (ja) * 2000-03-21 2001-09-28 Mitsubishi Electric Corp 半導体洗浄処理方法、半導体装置およびその製造方法
US6762132B1 (en) 2000-08-31 2004-07-13 Micron Technology, Inc. Compositions for dissolution of low-K dielectric films, and methods of use
JP4045731B2 (ja) 2000-09-25 2008-02-13 株式会社日立製作所 薄膜半導体素子の製造方法
US6479372B1 (en) * 2000-10-17 2002-11-12 United Microelectronics Corp. Method for avoiding water marks formed during cleaning after well implantation
KR100488376B1 (ko) * 2001-04-27 2005-05-11 가부시키가이샤 고베 세이코쇼 기판 처리 방법 및 기판 처리 설비
JP4522642B2 (ja) * 2001-05-18 2010-08-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100939596B1 (ko) 2001-11-02 2010-02-01 어플라이드 머티어리얼스, 인코포레이티드 단일 웨이퍼 건조기 및 건조 방법
US20030192570A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Method and apparatus for wafer cleaning
KR100488907B1 (ko) * 2002-08-05 2005-05-11 에이펫(주) 산화막 형성방법 및 이를 적용한 캐패시터 제조방법
JP4162211B2 (ja) * 2002-09-05 2008-10-08 コバレントマテリアル株式会社 シリコンウエハの洗浄方法および洗浄されたシリコンウエハ
AU2002951838A0 (en) * 2002-10-08 2002-10-24 Unisearch Limited Method of preparation for polycrystalline semiconductor films
EP1427003A3 (en) * 2002-12-02 2005-03-02 OHMI, Tadahiro Semiconductor device and method of manufacturing the same
US20070227567A1 (en) * 2004-07-16 2007-10-04 Tohoku University Processing Liquid and Processing Method for Semiconductor Device, and Semiconductor Manufacturing Apparatus
US7611825B2 (en) * 2004-09-15 2009-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography method to prevent photoresist pattern collapse
JP4817291B2 (ja) * 2005-10-25 2011-11-16 Ｏｋｉセミコンダクタ株式会社 半導体ウェハの製造方法
KR100856326B1 (ko) * 2006-07-19 2008-09-03 삼성전기주식회사 레이저 리프트 오프를 이용한 유전체 박막을 갖는 박막 커패시터 내장된 인쇄회로기판 제조방법, 및 이로부터 제조된 박막 커패시터 내장된 인쇄회로기판
US20110195279A1 (en) * 2007-09-04 2011-08-11 Konica Minolta Opto, Inc. Method for manufacturing glass substrate for information recording medium, glass substrate for information recording medium, and magnetic recording medium
EP2077576A1 (en) * 2008-01-04 2009-07-08 S.O.I.Tec Silicon on Insulator Technologies Process for preparing cleaned substrates suitable for epitaxial growth
KR101381305B1 (ko) * 2010-04-23 2014-04-07 솔렉셀, 인크. 고효율 태양 전지 극 저 표면 재결합 속도를 달성하기 위한 패시베이션 방법 및 장치
US20120276714A1 (en) * 2011-04-28 2012-11-01 Nanya Technology Corporation Method of oxidizing polysilazane
JP6403377B2 (ja) * 2013-11-19 2018-10-10 株式会社ジャパンディスプレイ 多結晶化方法
KR20170136740A (ko) * 2016-06-02 2017-12-12 엘지디스플레이 주식회사 박막 트랜지스터의 제조 방법, 이를 수행하기 위한 탈수소 장치 및 이를 통해 제조된 박막 트랜지스터를 포함하는 유기 발광 표시 장치
CN110223927A (zh) * 2018-03-01 2019-09-10 胜高股份有限公司 硅晶片的金属污染分析方法
CN111540670B (zh) * 2020-05-11 2023-10-24 粤芯半导体技术股份有限公司 晶圆的湿法清洗方法及半导体器件的制造方法
JP2023048696A (ja) * 2021-09-28 2023-04-07 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578520A (en) * 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
JP3154814B2 (ja) * 1991-06-28 2001-04-09 株式会社東芝 半導体ウエハの洗浄方法および洗浄装置
JP2914555B2 (ja) * 1994-08-30 1999-07-05 信越半導体株式会社 半導体シリコンウェーハの洗浄方法
JP3609131B2 (ja) * 1994-12-06 2005-01-12 株式会社半導体エネルギー研究所 イオンドーピング装置のクリーニング方法
JP3923097B2 (ja) * 1995-03-06 2007-05-30 忠弘 大見 洗浄装置
JP3198899B2 (ja) * 1995-11-30 2001-08-13 アルプス電気株式会社 ウエット処理方法
JPH11204791A (ja) * 1997-11-17 1999-07-30 Toshiba Corp 半導体装置及びその製造方法

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