JP4001662B2 - シリコンの洗浄方法および多結晶シリコンの作製方法 - Google Patents

シリコンの洗浄方法および多結晶シリコンの作製方法 Download PDF

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Publication number
JP4001662B2
JP4001662B2 JP18732697A JP18732697A JP4001662B2 JP 4001662 B2 JP4001662 B2 JP 4001662B2 JP 18732697 A JP18732697 A JP 18732697A JP 18732697 A JP18732697 A JP 18732697A JP 4001662 B2 JP4001662 B2 JP 4001662B2
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Japan
Prior art keywords
amorphous silicon
pure water
oxide film
silicon
silicon surface
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JP18732697A
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English (en)
Japanese (ja)
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JPH1116866A (ja
JPH1116866A5 (enExample
Inventor
宏勇 張
真之 坂倉
裕吾 後藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP18732697A priority Critical patent/JP4001662B2/ja
Priority to US09/103,813 priority patent/US6235122B1/en
Publication of JPH1116866A publication Critical patent/JPH1116866A/ja
Priority to US09/832,866 priority patent/US6696326B2/en
Publication of JPH1116866A5 publication Critical patent/JPH1116866A5/ja
Application granted granted Critical
Publication of JP4001662B2 publication Critical patent/JP4001662B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
JP18732697A 1997-06-27 1997-06-27 シリコンの洗浄方法および多結晶シリコンの作製方法 Expired - Lifetime JP4001662B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP18732697A JP4001662B2 (ja) 1997-06-27 1997-06-27 シリコンの洗浄方法および多結晶シリコンの作製方法
US09/103,813 US6235122B1 (en) 1997-06-27 1998-06-24 Cleaning method and cleaning apparatus of silicon
US09/832,866 US6696326B2 (en) 1997-06-27 2001-04-12 Cleaning method to prevent watermarks

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18732697A JP4001662B2 (ja) 1997-06-27 1997-06-27 シリコンの洗浄方法および多結晶シリコンの作製方法

Publications (3)

Publication Number Publication Date
JPH1116866A JPH1116866A (ja) 1999-01-22
JPH1116866A5 JPH1116866A5 (enExample) 2005-03-17
JP4001662B2 true JP4001662B2 (ja) 2007-10-31

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JP18732697A Expired - Lifetime JP4001662B2 (ja) 1997-06-27 1997-06-27 シリコンの洗浄方法および多結晶シリコンの作製方法

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US (2) US6235122B1 (enExample)
JP (1) JP4001662B2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7402467B1 (en) 1999-03-26 2008-07-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6328814B1 (en) * 1999-03-26 2001-12-11 Applied Materials, Inc. Apparatus for cleaning and drying substrates
AU772539B2 (en) * 1999-07-29 2004-04-29 Kaneka Corporation Method for cleaning photovoltaic module and cleaning apparatus
US6221164B1 (en) * 2000-01-25 2001-04-24 Advanced Micro Devices, Inc. Method of in-situ cleaning for LPCVD teos pump
JP2001267281A (ja) * 2000-03-21 2001-09-28 Mitsubishi Electric Corp 半導体洗浄処理方法、半導体装置およびその製造方法
US6762132B1 (en) 2000-08-31 2004-07-13 Micron Technology, Inc. Compositions for dissolution of low-K dielectric films, and methods of use
JP4045731B2 (ja) 2000-09-25 2008-02-13 株式会社日立製作所 薄膜半導体素子の製造方法
US6479372B1 (en) * 2000-10-17 2002-11-12 United Microelectronics Corp. Method for avoiding water marks formed during cleaning after well implantation
KR100488376B1 (ko) * 2001-04-27 2005-05-11 가부시키가이샤 고베 세이코쇼 기판 처리 방법 및 기판 처리 설비
JP4522642B2 (ja) * 2001-05-18 2010-08-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100939596B1 (ko) 2001-11-02 2010-02-01 어플라이드 머티어리얼스, 인코포레이티드 단일 웨이퍼 건조기 및 건조 방법
US20030192570A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Method and apparatus for wafer cleaning
KR100488907B1 (ko) * 2002-08-05 2005-05-11 에이펫(주) 산화막 형성방법 및 이를 적용한 캐패시터 제조방법
JP4162211B2 (ja) * 2002-09-05 2008-10-08 コバレントマテリアル株式会社 シリコンウエハの洗浄方法および洗浄されたシリコンウエハ
AU2002951838A0 (en) * 2002-10-08 2002-10-24 Unisearch Limited Method of preparation for polycrystalline semiconductor films
EP1427003A3 (en) * 2002-12-02 2005-03-02 OHMI, Tadahiro Semiconductor device and method of manufacturing the same
US20070227567A1 (en) * 2004-07-16 2007-10-04 Tohoku University Processing Liquid and Processing Method for Semiconductor Device, and Semiconductor Manufacturing Apparatus
US7611825B2 (en) * 2004-09-15 2009-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography method to prevent photoresist pattern collapse
JP4817291B2 (ja) * 2005-10-25 2011-11-16 Ｏｋｉセミコンダクタ株式会社 半導体ウェハの製造方法
KR100856326B1 (ko) * 2006-07-19 2008-09-03 삼성전기주식회사 레이저 리프트 오프를 이용한 유전체 박막을 갖는 박막 커패시터 내장된 인쇄회로기판 제조방법, 및 이로부터 제조된 박막 커패시터 내장된 인쇄회로기판
US20110195279A1 (en) * 2007-09-04 2011-08-11 Konica Minolta Opto, Inc. Method for manufacturing glass substrate for information recording medium, glass substrate for information recording medium, and magnetic recording medium
EP2077576A1 (en) * 2008-01-04 2009-07-08 S.O.I.Tec Silicon on Insulator Technologies Process for preparing cleaned substrates suitable for epitaxial growth
KR101381305B1 (ko) * 2010-04-23 2014-04-07 솔렉셀, 인크. 고효율 태양 전지 극 저 표면 재결합 속도를 달성하기 위한 패시베이션 방법 및 장치
US20120276714A1 (en) * 2011-04-28 2012-11-01 Nanya Technology Corporation Method of oxidizing polysilazane
JP6403377B2 (ja) * 2013-11-19 2018-10-10 株式会社ジャパンディスプレイ 多結晶化方法
KR20170136740A (ko) * 2016-06-02 2017-12-12 엘지디스플레이 주식회사 박막 트랜지스터의 제조 방법, 이를 수행하기 위한 탈수소 장치 및 이를 통해 제조된 박막 트랜지스터를 포함하는 유기 발광 표시 장치
CN110223927A (zh) * 2018-03-01 2019-09-10 胜高股份有限公司 硅晶片的金属污染分析方法
CN111540670B (zh) * 2020-05-11 2023-10-24 粤芯半导体技术股份有限公司 晶圆的湿法清洗方法及半导体器件的制造方法
JP2023048696A (ja) * 2021-09-28 2023-04-07 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578520A (en) * 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
JP3154814B2 (ja) * 1991-06-28 2001-04-09 株式会社東芝 半導体ウエハの洗浄方法および洗浄装置
JP2914555B2 (ja) * 1994-08-30 1999-07-05 信越半導体株式会社 半導体シリコンウェーハの洗浄方法
JP3609131B2 (ja) * 1994-12-06 2005-01-12 株式会社半導体エネルギー研究所 イオンドーピング装置のクリーニング方法
JP3923097B2 (ja) * 1995-03-06 2007-05-30 忠弘 大見 洗浄装置
JP3198899B2 (ja) * 1995-11-30 2001-08-13 アルプス電気株式会社 ウエット処理方法
JPH11204791A (ja) * 1997-11-17 1999-07-30 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH1116866A (ja) 1999-01-22
US20020052096A1 (en) 2002-05-02
US6696326B2 (en) 2004-02-24
US6235122B1 (en) 2001-05-22

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