JPH11501458A - 低減したオン抵抗と耐圧性を有する埋込層を備えたトレンチ形電界効果トランジスタ - Google Patents

低減したオン抵抗と耐圧性を有する埋込層を備えたトレンチ形電界効果トランジスタ

Info

Publication number
JPH11501458A
JPH11501458A JP9509395A JP50939597A JPH11501458A JP H11501458 A JPH11501458 A JP H11501458A JP 9509395 A JP9509395 A JP 9509395A JP 50939597 A JP50939597 A JP 50939597A JP H11501458 A JPH11501458 A JP H11501458A
Authority
JP
Japan
Prior art keywords
region
buried layer
doped
substrate
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP9509395A
Other languages
English (en)
Japanese (ja)
Inventor
シィエ、フゥ−イユァン
チャング、マイク・エフ
チング、リー−イング
ヒム、スツェ
クック、ウィリアム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of JPH11501458A publication Critical patent/JPH11501458A/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP9509395A 1995-08-21 1996-08-16 低減したオン抵抗と耐圧性を有する埋込層を備えたトレンチ形電界効果トランジスタ Ceased JPH11501458A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/537,157 US5629543A (en) 1995-08-21 1995-08-21 Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness
US537,157 1995-08-21
PCT/US1996/013040 WO1997007533A1 (en) 1995-08-21 1996-08-16 Trenched dmos transistor with buried layer for reduced on-resistance and ruggedness

Publications (1)

Publication Number Publication Date
JPH11501458A true JPH11501458A (ja) 1999-02-02

Family

ID=24141463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9509395A Ceased JPH11501458A (ja) 1995-08-21 1996-08-16 低減したオン抵抗と耐圧性を有する埋込層を備えたトレンチ形電界効果トランジスタ

Country Status (6)

Country Link
US (1) US5629543A (enExample)
EP (1) EP0870322B1 (enExample)
JP (1) JPH11501458A (enExample)
KR (1) KR19990037698A (enExample)
DE (1) DE69635824T2 (enExample)
WO (1) WO1997007533A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127292A (ja) * 1999-10-27 2001-05-11 Siliconix Inc 高密度トレンチゲートパワーｍｏｓｆｅｔ
US6639278B2 (en) 2001-01-25 2003-10-28 Nec Electronics Corporation Semiconductor device
US6855998B2 (en) 2002-03-26 2005-02-15 Kabushiki Kaisha Toshiba Semiconductor device
JP2019519938A (ja) * 2016-06-29 2019-07-11 アーベーベー・シュバイツ・アーゲー 短チャネルトレンチ型パワーｍｏｓｆｅｔ

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KR100218260B1 (ko) * 1997-01-14 1999-09-01 김덕중 트랜치 게이트형 모스트랜지스터의 제조방법
JP3938964B2 (ja) * 1997-02-10 2007-06-27 三菱電機株式会社 高耐圧半導体装置およびその製造方法
JP3502531B2 (ja) 1997-08-28 2004-03-02 株式会社ルネサステクノロジ 半導体装置の製造方法
US6429481B1 (en) 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
US5981999A (en) * 1999-01-07 1999-11-09 Industrial Technology Research Institute Power trench DMOS with large active cell density
GB2347014B (en) * 1999-02-18 2003-04-16 Zetex Plc Semiconductor device
US6077744A (en) * 1999-02-22 2000-06-20 Intersil Corporation Semiconductor trench MOS devices
US6198127B1 (en) * 1999-05-19 2001-03-06 Intersil Corporation MOS-gated power device having extended trench and doping zone and process for forming same
US6365932B1 (en) 1999-08-20 2002-04-02 Denso Corporation Power MOS transistor
US20030060013A1 (en) * 1999-09-24 2003-03-27 Bruce D. Marchant Method of manufacturing trench field effect transistors with trenched heavy body
US6461918B1 (en) 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
US6635534B2 (en) * 2000-06-05 2003-10-21 Fairchild Semiconductor Corporation Method of manufacturing a trench MOSFET using selective growth epitaxy
US6921939B2 (en) * 2000-07-20 2005-07-26 Fairchild Semiconductor Corporation Power MOSFET and method for forming same using a self-aligned body implant
US6696726B1 (en) * 2000-08-16 2004-02-24 Fairchild Semiconductor Corporation Vertical MOSFET with ultra-low resistance and low gate charge
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6818513B2 (en) * 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US6710403B2 (en) * 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US6803626B2 (en) * 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
FI120310B (fi) * 2001-02-13 2009-09-15 Valtion Teknillinen Parannettu menetelmä erittyvien proteiinien tuottamiseksi sienissä
US6713351B2 (en) * 2001-03-28 2004-03-30 General Semiconductor, Inc. Double diffused field effect transistor having reduced on-resistance
US7061066B2 (en) 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
KR100859701B1 (ko) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
GB0208833D0 (en) * 2002-04-18 2002-05-29 Koninkl Philips Electronics Nv Trench-gate semiconductor devices
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7033891B2 (en) * 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
US7063975B2 (en) * 2002-10-28 2006-06-20 Ixys Corporation Shallow trench power MOSFET and IGBT
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
KR100994719B1 (ko) * 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US20050199918A1 (en) * 2004-03-15 2005-09-15 Daniel Calafut Optimized trench power MOSFET with integrated schottky diode
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
DE102005012217B4 (de) * 2005-03-15 2007-02-22 Infineon Technologies Austria Ag Lateraler MISFET und Verfahren zur Herstellung desselben
JP2008536316A (ja) 2005-04-06 2008-09-04 フェアチャイルド・セミコンダクター・コーポレーション トレンチゲート電界効果トランジスタおよびその形成方法
KR101296984B1 (ko) 2005-06-10 2013-08-14 페어차일드 세미컨덕터 코포레이션 전하 균형 전계 효과 트랜지스터
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
DE102005049593B4 (de) * 2005-10-17 2012-02-02 Infineon Technologies Ag Halbleiterbauelementanordnung und Verfahren zu deren Herstellung
US8350318B2 (en) * 2006-03-06 2013-01-08 Semiconductor Components Industries, Llc Method of forming an MOS transistor and structure therefor
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
DE102006024504B4 (de) * 2006-05-23 2010-09-02 Infineon Technologies Austria Ag Leistungshalbleiterbauelement mit vertikaler Gatezone und Verfahren zur Herstellung desselben
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US7804150B2 (en) 2006-06-29 2010-09-28 Fairchild Semiconductor Corporation Lateral trench gate FET with direct source-drain current path
KR101630734B1 (ko) 2007-09-21 2016-06-16 페어차일드 세미컨덕터 코포레이션 전력 소자
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
WO2009144640A1 (en) * 2008-05-28 2009-12-03 Nxp B.V. Trench gate semiconductor device and method of manufacturing thereof.
JP4943394B2 (ja) * 2008-09-01 2012-05-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US7847346B2 (en) * 2008-11-26 2010-12-07 Force Mos Technology Co., Ltd. Trench MOSFET with trench source contact having copper wire bonding
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8264035B2 (en) * 2010-03-26 2012-09-11 Force Mos Technology Co., Ltd. Avalanche capability improvement in power semiconductor devices
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US9105682B2 (en) * 2011-02-28 2015-08-11 Infineon Technologies Austria Ag Semiconductor component with improved dynamic behavior
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
CN103489862B (zh) * 2012-06-12 2018-05-22 恩智浦美国有限公司 功率mosfet电流传感结构和方法
US20140167103A1 (en) * 2012-12-13 2014-06-19 Samsung Electro-Mechanics Co., Ltd. Semiconductor device and method of manufacturing the same
KR101440892B1 (ko) * 2013-02-01 2014-09-18 삼성에스디아이 주식회사 캡 커버 및 이를 포함하는 배터리 팩
KR102177257B1 (ko) 2014-04-15 2020-11-10 삼성전자주식회사 반도체 소자 및 그 제조 방법
US10317128B2 (en) 2017-01-03 2019-06-11 Samsung Electronics Co., Ltd. Refrigerator
CN109273529A (zh) * 2017-07-18 2019-01-25 比亚迪股份有限公司 Mos型功率器件及其制备方法
CN107403834A (zh) * 2017-09-14 2017-11-28 全球能源互联网研究院 具有软关断特性的fs型igbt器件
CN109065628A (zh) * 2018-08-21 2018-12-21 电子科技大学 一种体区变掺杂的槽栅dmos器件
JP7279394B2 (ja) * 2019-02-15 2023-05-23 富士電機株式会社 半導体装置および半導体装置の製造方法
CN116344575B (zh) * 2021-12-22 2024-06-18 浙江清华柔性电子技术研究院 Vdmos器件及vdmos器件的制作方法
CN118136676B (zh) * 2024-05-07 2024-07-26 上海陆芯电子科技有限公司 一种碳化硅金属-氧化物场效应晶体管以及功率器件

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JPH025482A (ja) * 1988-06-24 1990-01-10 Hitachi Ltd 縦形ｍｏｓｆｅｔ
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JPH07122749A (ja) * 1993-09-01 1995-05-12 Toshiba Corp 半導体装置及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127292A (ja) * 1999-10-27 2001-05-11 Siliconix Inc 高密度トレンチゲートパワーｍｏｓｆｅｔ
US6639278B2 (en) 2001-01-25 2003-10-28 Nec Electronics Corporation Semiconductor device
US6855998B2 (en) 2002-03-26 2005-02-15 Kabushiki Kaisha Toshiba Semiconductor device
JP2019519938A (ja) * 2016-06-29 2019-07-11 アーベーベー・シュバイツ・アーゲー 短チャネルトレンチ型パワーｍｏｓｆｅｔ

Also Published As

Publication number Publication date
WO1997007533A1 (en) 1997-02-27
EP0870322A4 (enExample) 1998-10-14
US5629543A (en) 1997-05-13
KR19990037698A (ko) 1999-05-25
EP0870322A1 (en) 1998-10-14
EP0870322B1 (en) 2006-02-15
DE69635824D1 (de) 2006-04-20
DE69635824T2 (de) 2006-10-19

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