JPH11265984A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPH11265984A
JPH11265984A JP10066336A JP6633698A JPH11265984A JP H11265984 A JPH11265984 A JP H11265984A JP 10066336 A JP10066336 A JP 10066336A JP 6633698 A JP6633698 A JP 6633698A JP H11265984 A JPH11265984 A JP H11265984A
Authority
JP
Japan
Prior art keywords
electrode
manufacturing
film
semiconductor device
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10066336A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11265984A5 (https=
Inventor
Katsuyuki Hironaka
克行 広中
Akihiko Ochiai
昭彦 落合
Naohiro Tanaka
均洋 田中
Kenji Katori
健二 香取
Chiharu Isobe
千春 磯辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP10066336A priority Critical patent/JPH11265984A/ja
Publication of JPH11265984A publication Critical patent/JPH11265984A/ja
Publication of JPH11265984A5 publication Critical patent/JPH11265984A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP10066336A 1998-03-17 1998-03-17 半導体装置の製造方法 Pending JPH11265984A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10066336A JPH11265984A (ja) 1998-03-17 1998-03-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10066336A JPH11265984A (ja) 1998-03-17 1998-03-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH11265984A true JPH11265984A (ja) 1999-09-28
JPH11265984A5 JPH11265984A5 (https=) 2005-10-27

Family

ID=13312921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10066336A Pending JPH11265984A (ja) 1998-03-17 1998-03-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH11265984A (https=)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127264A (ja) * 1999-10-29 2001-05-11 Toshiba Corp 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ
JP2001210806A (ja) * 1999-12-27 2001-08-03 Hyundai Electronics Ind Co Ltd 電気メッキ法を利用して下部電極を形成する方法
JP2002026145A (ja) * 2000-06-19 2002-01-25 Hynix Semiconductor Inc キャパシタ電極と接するプラグを有する半導体素子及びその製造方法
JP2002043440A (ja) * 2000-06-30 2002-02-08 Hynix Semiconductor Inc 半導体メモリおよびその製造方法
KR100326810B1 (ko) * 1999-12-31 2002-03-04 박종섭 캐패시터의 제조 방법
KR100331570B1 (ko) * 2000-06-13 2002-04-06 윤종용 전기도금법을 이용한 반도체 메모리 소자의 커패시터제조방법
KR100346833B1 (ko) * 1999-10-14 2002-08-03 삼성전자 주식회사 전기 도금 방법을 이용한 반도체 메모리 소자의 캐패시터제조방법
JP2002280523A (ja) * 2001-03-16 2002-09-27 Nec Corp 半導体記憶装置とその製造方法
KR20030003332A (ko) * 2001-06-30 2003-01-10 주식회사 하이닉스반도체 강유전체 소자의 캐패시터 제조방법
US6831323B2 (en) 2002-03-28 2004-12-14 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
KR100501595B1 (ko) * 2000-11-15 2005-07-14 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
KR100504943B1 (ko) * 2000-11-15 2005-08-03 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
KR100646947B1 (ko) * 2000-06-29 2006-11-17 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조 방법
KR100676534B1 (ko) * 2000-06-28 2007-01-30 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조 방법
JP2007221161A (ja) * 2000-01-21 2007-08-30 Lucent Technol Inc 半導体デバイスで用いられるキャパシタとその製造方法
JP2008085350A (ja) * 2007-10-18 2008-04-10 Renesas Technology Corp 半導体集積回路装置の製造方法および半導体集積回路装置

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100346833B1 (ko) * 1999-10-14 2002-08-03 삼성전자 주식회사 전기 도금 방법을 이용한 반도체 메모리 소자의 캐패시터제조방법
JP2001127264A (ja) * 1999-10-29 2001-05-11 Toshiba Corp 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ
JP2001210806A (ja) * 1999-12-27 2001-08-03 Hyundai Electronics Ind Co Ltd 電気メッキ法を利用して下部電極を形成する方法
KR100326810B1 (ko) * 1999-12-31 2002-03-04 박종섭 캐패시터의 제조 방법
JP2007221161A (ja) * 2000-01-21 2007-08-30 Lucent Technol Inc 半導体デバイスで用いられるキャパシタとその製造方法
KR100331570B1 (ko) * 2000-06-13 2002-04-06 윤종용 전기도금법을 이용한 반도체 메모리 소자의 커패시터제조방법
JP2002026145A (ja) * 2000-06-19 2002-01-25 Hynix Semiconductor Inc キャパシタ電極と接するプラグを有する半導体素子及びその製造方法
KR100676534B1 (ko) * 2000-06-28 2007-01-30 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조 방법
KR100646947B1 (ko) * 2000-06-29 2006-11-17 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조 방법
JP2002043440A (ja) * 2000-06-30 2002-02-08 Hynix Semiconductor Inc 半導体メモリおよびその製造方法
KR100501595B1 (ko) * 2000-11-15 2005-07-14 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
KR100504943B1 (ko) * 2000-11-15 2005-08-03 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
JP2002280523A (ja) * 2001-03-16 2002-09-27 Nec Corp 半導体記憶装置とその製造方法
KR20030003332A (ko) * 2001-06-30 2003-01-10 주식회사 하이닉스반도체 강유전체 소자의 캐패시터 제조방법
US6831323B2 (en) 2002-03-28 2004-12-14 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US7268036B2 (en) 2002-03-28 2007-09-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2008085350A (ja) * 2007-10-18 2008-04-10 Renesas Technology Corp 半導体集積回路装置の製造方法および半導体集積回路装置

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