JPH11265984A5 - - Google Patents

Info

Publication number
JPH11265984A5
JPH11265984A5 JP1998066336A JP6633698A JPH11265984A5 JP H11265984 A5 JPH11265984 A5 JP H11265984A5 JP 1998066336 A JP1998066336 A JP 1998066336A JP 6633698 A JP6633698 A JP 6633698A JP H11265984 A5 JPH11265984 A5 JP H11265984A5
Authority
JP
Japan
Prior art keywords
manufacturing
semiconductor device
forming
electrode
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998066336A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11265984A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10066336A priority Critical patent/JPH11265984A/ja
Priority claimed from JP10066336A external-priority patent/JPH11265984A/ja
Publication of JPH11265984A publication Critical patent/JPH11265984A/ja
Publication of JPH11265984A5 publication Critical patent/JPH11265984A5/ja
Pending legal-status Critical Current

Links

JP10066336A 1998-03-17 1998-03-17 半導体装置の製造方法 Pending JPH11265984A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10066336A JPH11265984A (ja) 1998-03-17 1998-03-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10066336A JPH11265984A (ja) 1998-03-17 1998-03-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH11265984A JPH11265984A (ja) 1999-09-28
JPH11265984A5 true JPH11265984A5 (https=) 2005-10-27

Family

ID=13312921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10066336A Pending JPH11265984A (ja) 1998-03-17 1998-03-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH11265984A (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100346833B1 (ko) * 1999-10-14 2002-08-03 삼성전자 주식회사 전기 도금 방법을 이용한 반도체 메모리 소자의 캐패시터제조방법
JP4074734B2 (ja) * 1999-10-29 2008-04-09 株式会社東芝 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ
US6451666B2 (en) * 1999-12-27 2002-09-17 Hyundai Electronics Industries Co., Ltd Method for forming a lower electrode by using an electroplating method
KR100326810B1 (ko) * 1999-12-31 2002-03-04 박종섭 캐패시터의 제조 방법
US6498364B1 (en) * 2000-01-21 2002-12-24 Agere Systems Inc. Capacitor for integration with copper damascene processes
KR100331570B1 (ko) * 2000-06-13 2002-04-06 윤종용 전기도금법을 이용한 반도체 메모리 소자의 커패시터제조방법
KR100612561B1 (ko) * 2000-06-19 2006-08-11 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
KR100676534B1 (ko) * 2000-06-28 2007-01-30 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조 방법
KR100646947B1 (ko) * 2000-06-29 2006-11-17 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조 방법
KR100569587B1 (ko) * 2000-06-30 2006-04-10 주식회사 하이닉스반도체 고유전체 캐패시터의 제조 방법
KR100504943B1 (ko) * 2000-11-15 2005-08-03 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
KR100501595B1 (ko) * 2000-11-15 2005-07-14 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
JP2002280523A (ja) * 2001-03-16 2002-09-27 Nec Corp 半導体記憶装置とその製造方法
KR20030003332A (ko) * 2001-06-30 2003-01-10 주식회사 하이닉스반도체 강유전체 소자의 캐패시터 제조방법
JP2003289134A (ja) 2002-03-28 2003-10-10 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2008085350A (ja) * 2007-10-18 2008-04-10 Renesas Technology Corp 半導体集積回路装置の製造方法および半導体集積回路装置

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