JPH11204742A5 - - Google Patents

Info

Publication number
JPH11204742A5
JPH11204742A5 JP1998008170A JP817098A JPH11204742A5 JP H11204742 A5 JPH11204742 A5 JP H11204742A5 JP 1998008170 A JP1998008170 A JP 1998008170A JP 817098 A JP817098 A JP 817098A JP H11204742 A5 JPH11204742 A5 JP H11204742A5
Authority
JP
Japan
Prior art keywords
temperature
memory chip
address decoder
recording layer
recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998008170A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11204742A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10008170A priority Critical patent/JPH11204742A/ja
Priority claimed from JP10008170A external-priority patent/JPH11204742A/ja
Priority to US09/233,653 priority patent/US6384435B1/en
Publication of JPH11204742A publication Critical patent/JPH11204742A/ja
Priority to US10/006,007 priority patent/US6909625B2/en
Priority to US11/095,321 priority patent/US7042751B2/en
Publication of JPH11204742A5 publication Critical patent/JPH11204742A5/ja
Pending legal-status Critical Current

Links

JP10008170A 1998-01-20 1998-01-20 メモリ及び情報機器 Pending JPH11204742A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10008170A JPH11204742A (ja) 1998-01-20 1998-01-20 メモリ及び情報機器
US09/233,653 US6384435B1 (en) 1998-01-20 1999-01-19 Data cell region and system region for a semiconductor memory
US10/006,007 US6909625B2 (en) 1998-01-20 2001-12-04 Method to produce data cell region and system region for semiconductor memory
US11/095,321 US7042751B2 (en) 1998-01-20 2005-03-31 Method to produce data cell region and system region for semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10008170A JPH11204742A (ja) 1998-01-20 1998-01-20 メモリ及び情報機器

Publications (2)

Publication Number Publication Date
JPH11204742A JPH11204742A (ja) 1999-07-30
JPH11204742A5 true JPH11204742A5 (https=) 2005-07-21

Family

ID=11685867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10008170A Pending JPH11204742A (ja) 1998-01-20 1998-01-20 メモリ及び情報機器

Country Status (2)

Country Link
US (3) US6384435B1 (https=)
JP (1) JPH11204742A (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204742A (ja) * 1998-01-20 1999-07-30 Sony Corp メモリ及び情報機器
JP4491870B2 (ja) * 1999-10-27 2010-06-30 ソニー株式会社 不揮発性メモリの駆動方法
TW587252B (en) * 2000-01-18 2004-05-11 Hitachi Ltd Semiconductor memory device and data processing device
US20040124407A1 (en) * 2000-02-11 2004-07-01 Kozicki Michael N. Scalable programmable structure, an array including the structure, and methods of forming the same
JP3915868B2 (ja) * 2000-07-07 2007-05-16 セイコーエプソン株式会社 強誘電体メモリ装置およびその製造方法
JP2003152165A (ja) * 2001-11-15 2003-05-23 Fujitsu Ltd 半導体装置およびその製造方法
JP2004241397A (ja) 2003-01-23 2004-08-26 Dainippon Printing Co Ltd 薄膜トランジスタおよびその製造方法
WO2004100266A1 (ja) 2003-05-09 2004-11-18 Matsushita Electric Industrial Co., Ltd. 不揮発性メモリおよびその製造方法
JP4545397B2 (ja) * 2003-06-19 2010-09-15 株式会社 日立ディスプレイズ 画像表示装置
ITBO20040076A1 (it) * 2004-02-17 2004-05-17 Fabio Biscarini Metodo per la realizzazione di un film sottile di composizione chimica spazialmente strutturata su scala micrometrica o nanometrica su un supporto
JP2008543105A (ja) * 2005-06-06 2008-11-27 エヌエックスピー ビー ヴィ クロスバー回路装置の製造方法
US9129845B2 (en) 2007-09-19 2015-09-08 Micron Technology, Inc. Buried low-resistance metal word lines for cross-point variable-resistance material memories
US7969774B2 (en) * 2009-03-10 2011-06-28 Micron Technology, Inc. Electronic devices formed of two or more substrates bonded together, electronic systems comprising electronic devices and methods of making electronic devices
KR101089396B1 (ko) 2009-06-02 2011-12-07 고려대학교 산학협력단 3차원 임프린트 및 리프트 오프 공정을 이용한 교차형 상변환 소자 제조 방법 및 그 방법에 의해 제조된 교차형 상변환 소자
US11411181B2 (en) * 2020-03-30 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Phase-change memory device and method

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0762958B2 (ja) * 1983-06-03 1995-07-05 株式会社日立製作所 Ｍｏｓ記憶装置
JPH0715799B2 (ja) * 1987-06-30 1995-02-22 日本電気株式会社 半導体記憶装置
JPH01166399A (ja) * 1987-12-23 1989-06-30 Toshiba Corp スタティック型ランダムアクセスメモリ
JPH01166400A (ja) * 1987-12-23 1989-06-30 Toshiba Corp スタティック型ランダムアクセスメモリ
US5208782A (en) * 1989-02-09 1993-05-04 Hitachi, Ltd. Semiconductor integrated circuit device having a plurality of memory blocks and a lead on chip (LOC) arrangement
JPH0770620B2 (ja) * 1990-12-26 1995-07-31 株式会社東芝 半導体記憶装置
KR100307602B1 (ko) * 1993-08-30 2001-12-15 가나이 쓰도무 반도체집적회로장치및그제조방법
EP1178530A2 (en) * 1993-09-30 2002-02-06 Kopin Corporation Three-dimensional processor using transferred thin film circuits
JP3490131B2 (ja) * 1994-01-21 2004-01-26 株式会社ルネサステクノロジ データ転送制御方法、データプロセッサ及びデータ処理システム
US5781031A (en) * 1995-11-21 1998-07-14 International Business Machines Corporation Programmable logic array
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
JPH11204742A (ja) * 1998-01-20 1999-07-30 Sony Corp メモリ及び情報機器
KR100265770B1 (ko) * 1998-06-12 2000-09-15 윤종용 워드라인 보다 짧은 비트라인을 갖는 에스램 셀
US6396751B1 (en) * 2001-01-05 2002-05-28 Taiwan Semiconductor Manufacturing Corporation, Ltd Semiconductor device comprising a test structure
JP3729159B2 (ja) * 2002-06-26 2005-12-21 ソニー株式会社 磁気メモリ装置
US6778449B2 (en) * 2002-07-01 2004-08-17 International Business Machines Corporation Method and design for measuring SRAM array leakage macro (ALM)

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