JPH11204742A - メモリ及び情報機器 - Google Patents

メモリ及び情報機器

Info

Publication number
JPH11204742A
JPH11204742A JP10008170A JP817098A JPH11204742A JP H11204742 A JPH11204742 A JP H11204742A JP 10008170 A JP10008170 A JP 10008170A JP 817098 A JP817098 A JP 817098A JP H11204742 A JPH11204742 A JP H11204742A
Authority
JP
Japan
Prior art keywords
data cell
data
memory
wiring pattern
information device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10008170A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11204742A5 (https=
Inventor
Katsuhisa Araya
勝久 荒谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP10008170A priority Critical patent/JPH11204742A/ja
Priority to US09/233,653 priority patent/US6384435B1/en
Publication of JPH11204742A publication Critical patent/JPH11204742A/ja
Priority to US10/006,007 priority patent/US6909625B2/en
Priority to US11/095,321 priority patent/US7042751B2/en
Publication of JPH11204742A5 publication Critical patent/JPH11204742A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/91—Diode arrays, e.g. diode read-only memory array

Landscapes

  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP10008170A 1998-01-20 1998-01-20 メモリ及び情報機器 Pending JPH11204742A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10008170A JPH11204742A (ja) 1998-01-20 1998-01-20 メモリ及び情報機器
US09/233,653 US6384435B1 (en) 1998-01-20 1999-01-19 Data cell region and system region for a semiconductor memory
US10/006,007 US6909625B2 (en) 1998-01-20 2001-12-04 Method to produce data cell region and system region for semiconductor memory
US11/095,321 US7042751B2 (en) 1998-01-20 2005-03-31 Method to produce data cell region and system region for semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10008170A JPH11204742A (ja) 1998-01-20 1998-01-20 メモリ及び情報機器

Publications (2)

Publication Number Publication Date
JPH11204742A true JPH11204742A (ja) 1999-07-30
JPH11204742A5 JPH11204742A5 (https=) 2005-07-21

Family

ID=11685867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10008170A Pending JPH11204742A (ja) 1998-01-20 1998-01-20 メモリ及び情報機器

Country Status (2)

Country Link
US (3) US6384435B1 (https=)
JP (1) JPH11204742A (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127263A (ja) * 1999-10-27 2001-05-11 Sony Corp 不揮発性メモリおよびその駆動方法
JP2002026285A (ja) * 2000-07-07 2002-01-25 Seiko Epson Corp 強誘電体メモリ装置およびその製造方法
US7232703B2 (en) 2003-05-09 2007-06-19 Matsushita Electric Industrial Co., Ltd. Non-volatile memory and the fabrication method
US7445971B2 (en) 2003-01-23 2008-11-04 Dai Nippon Printing Co., Ltd. Thin film transistor and method for manufacturing the same
JP2010539729A (ja) * 2007-09-19 2010-12-16 マイクロン テクノロジー， インク． クロスポイント型可変抵抗材料メモリの埋め込み低抵抗金属ワード線
KR101089396B1 (ko) 2009-06-02 2011-12-07 고려대학교 산학협력단 3차원 임프린트 및 리프트 오프 공정을 이용한 교차형 상변환 소자 제조 방법 및 그 방법에 의해 제조된 교차형 상변환 소자
JP2012520569A (ja) * 2009-03-10 2012-09-06 マイクロン テクノロジー， インク． 共に結合された２つ以上の基板から形成された電子デバイス、電子デバイスを備える電子システム、及び、電子デバイスの製造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204742A (ja) * 1998-01-20 1999-07-30 Sony Corp メモリ及び情報機器
TW587252B (en) * 2000-01-18 2004-05-11 Hitachi Ltd Semiconductor memory device and data processing device
US20040124407A1 (en) * 2000-02-11 2004-07-01 Kozicki Michael N. Scalable programmable structure, an array including the structure, and methods of forming the same
JP2003152165A (ja) * 2001-11-15 2003-05-23 Fujitsu Ltd 半導体装置およびその製造方法
JP4545397B2 (ja) * 2003-06-19 2010-09-15 株式会社 日立ディスプレイズ 画像表示装置
ITBO20040076A1 (it) * 2004-02-17 2004-05-17 Fabio Biscarini Metodo per la realizzazione di un film sottile di composizione chimica spazialmente strutturata su scala micrometrica o nanometrica su un supporto
JP2008543105A (ja) * 2005-06-06 2008-11-27 エヌエックスピー ビー ヴィ クロスバー回路装置の製造方法
US11411181B2 (en) * 2020-03-30 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Phase-change memory device and method

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0762958B2 (ja) * 1983-06-03 1995-07-05 株式会社日立製作所 Ｍｏｓ記憶装置
JPH0715799B2 (ja) * 1987-06-30 1995-02-22 日本電気株式会社 半導体記憶装置
JPH01166399A (ja) * 1987-12-23 1989-06-30 Toshiba Corp スタティック型ランダムアクセスメモリ
JPH01166400A (ja) * 1987-12-23 1989-06-30 Toshiba Corp スタティック型ランダムアクセスメモリ
US5208782A (en) * 1989-02-09 1993-05-04 Hitachi, Ltd. Semiconductor integrated circuit device having a plurality of memory blocks and a lead on chip (LOC) arrangement
JPH0770620B2 (ja) * 1990-12-26 1995-07-31 株式会社東芝 半導体記憶装置
KR100307602B1 (ko) * 1993-08-30 2001-12-15 가나이 쓰도무 반도체집적회로장치및그제조방법
EP1178530A2 (en) * 1993-09-30 2002-02-06 Kopin Corporation Three-dimensional processor using transferred thin film circuits
JP3490131B2 (ja) * 1994-01-21 2004-01-26 株式会社ルネサステクノロジ データ転送制御方法、データプロセッサ及びデータ処理システム
US5781031A (en) * 1995-11-21 1998-07-14 International Business Machines Corporation Programmable logic array
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
JPH11204742A (ja) * 1998-01-20 1999-07-30 Sony Corp メモリ及び情報機器
KR100265770B1 (ko) * 1998-06-12 2000-09-15 윤종용 워드라인 보다 짧은 비트라인을 갖는 에스램 셀
US6396751B1 (en) * 2001-01-05 2002-05-28 Taiwan Semiconductor Manufacturing Corporation, Ltd Semiconductor device comprising a test structure
JP3729159B2 (ja) * 2002-06-26 2005-12-21 ソニー株式会社 磁気メモリ装置
US6778449B2 (en) * 2002-07-01 2004-08-17 International Business Machines Corporation Method and design for measuring SRAM array leakage macro (ALM)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127263A (ja) * 1999-10-27 2001-05-11 Sony Corp 不揮発性メモリおよびその駆動方法
JP2002026285A (ja) * 2000-07-07 2002-01-25 Seiko Epson Corp 強誘電体メモリ装置およびその製造方法
US7445971B2 (en) 2003-01-23 2008-11-04 Dai Nippon Printing Co., Ltd. Thin film transistor and method for manufacturing the same
US7232703B2 (en) 2003-05-09 2007-06-19 Matsushita Electric Industrial Co., Ltd. Non-volatile memory and the fabrication method
US7394090B2 (en) 2003-05-09 2008-07-01 Matsushita Electric Industrial Co., Ltd. Non-volatile memory and the fabrication method
US9666800B2 (en) 2007-09-19 2017-05-30 Micron Technology, Inc. Buried low-resistance metal word lines for cross-point variable-resistance material memories
US9129845B2 (en) 2007-09-19 2015-09-08 Micron Technology, Inc. Buried low-resistance metal word lines for cross-point variable-resistance material memories
JP2010539729A (ja) * 2007-09-19 2010-12-16 マイクロン テクノロジー， インク． クロスポイント型可変抵抗材料メモリの埋め込み低抵抗金属ワード線
US10090464B2 (en) 2007-09-19 2018-10-02 Micron Technology, Inc. Buried low-resistance metal word lines for cross-point variable-resistance material memories
US10573812B2 (en) 2007-09-19 2020-02-25 Micron Technology, Inc. Buried low-resistance metal word lines for cross-point variable-resistance material memories
US10847722B2 (en) 2007-09-19 2020-11-24 Micron Technology, Inc. Buried low-resistance metal word lines for cross-point variable-resistance material memories
JP2012520569A (ja) * 2009-03-10 2012-09-06 マイクロン テクノロジー， インク． 共に結合された２つ以上の基板から形成された電子デバイス、電子デバイスを備える電子システム、及び、電子デバイスの製造方法
US8570798B2 (en) 2009-03-10 2013-10-29 Micron Technology, Inc. Electronic devices formed of two or more substrates connected together, electronic systems comprising electronic devices, and methods of forming electronic devices
US8837212B2 (en) 2009-03-10 2014-09-16 Micron Technology, Inc. Electronic devices including two or more substrates electrically connected together and methods of forming such electronic devices
US9345135B2 (en) 2009-03-10 2016-05-17 Micron Technology, Inc. Electronic devices including two or more substrates electrically connected together and methods of forming such electronic devices
KR101089396B1 (ko) 2009-06-02 2011-12-07 고려대학교 산학협력단 3차원 임프린트 및 리프트 오프 공정을 이용한 교차형 상변환 소자 제조 방법 및 그 방법에 의해 제조된 교차형 상변환 소자

Also Published As

Publication number Publication date
US6909625B2 (en) 2005-06-21
US7042751B2 (en) 2006-05-09
US20020038876A1 (en) 2002-04-04
US20050185478A1 (en) 2005-08-25
US6384435B1 (en) 2002-05-07

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