JPH11177022A5 - - Google Patents

Info

Publication number
JPH11177022A5
JPH11177022A5 JP1997337306A JP33730697A JPH11177022A5 JP H11177022 A5 JPH11177022 A5 JP H11177022A5 JP 1997337306 A JP1997337306 A JP 1997337306A JP 33730697 A JP33730697 A JP 33730697A JP H11177022 A5 JPH11177022 A5 JP H11177022A5
Authority
JP
Japan
Prior art keywords
drive
wiring
drive transistor
power supply
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997337306A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11177022A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9337306A priority Critical patent/JPH11177022A/ja
Priority claimed from JP9337306A external-priority patent/JPH11177022A/ja
Priority to US09/088,703 priority patent/US6323689B1/en
Priority to KR1019980051606A priority patent/KR100284153B1/ko
Publication of JPH11177022A publication Critical patent/JPH11177022A/ja
Publication of JPH11177022A5 publication Critical patent/JPH11177022A5/ja
Pending legal-status Critical Current

Links

JP9337306A 1997-12-08 1997-12-08 半導体集積回路装置 Pending JPH11177022A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9337306A JPH11177022A (ja) 1997-12-08 1997-12-08 半導体集積回路装置
US09/088,703 US6323689B1 (en) 1997-12-08 1998-06-02 Semiconductor integrated circuit including output buffer circuit having high resistance to electro-static discharge
KR1019980051606A KR100284153B1 (ko) 1997-12-08 1998-11-28 반도체 집적 회로 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9337306A JPH11177022A (ja) 1997-12-08 1997-12-08 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPH11177022A JPH11177022A (ja) 1999-07-02
JPH11177022A5 true JPH11177022A5 (https=) 2005-06-09

Family

ID=18307396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9337306A Pending JPH11177022A (ja) 1997-12-08 1997-12-08 半導体集積回路装置

Country Status (3)

Country Link
US (1) US6323689B1 (https=)
JP (1) JPH11177022A (https=)
KR (1) KR100284153B1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100351452B1 (ko) * 1999-12-30 2002-09-09 주식회사 하이닉스반도체 디커플링 커패시터 구조를 갖는 반도체소자
TW445575B (en) 2000-05-20 2001-07-11 Nanya Technology Corp Dynamic random access memory with guard ring and its manufacture method
DE10041139A1 (de) * 2000-08-21 2002-03-14 Philips Corp Intellectual Pty Anordnung zur Verbesserung des ESD-Schutzes bei einem CMOS Buffer
US6552372B2 (en) * 2001-04-05 2003-04-22 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit having improved ESD protection
KR20030002847A (ko) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US6937003B2 (en) * 2002-03-26 2005-08-30 Veris Industries, Llc Power monitoring system
KR100769800B1 (ko) * 2001-12-26 2007-10-23 주식회사 하이닉스반도체 멀티 플레인 블럭 어드레스 레지스터
JP2003209186A (ja) * 2002-01-15 2003-07-25 Seiko Epson Corp 半導体装置
SG111069A1 (en) * 2002-06-18 2005-05-30 Micron Technology Inc Semiconductor devices including peripherally located bond pads, assemblies, packages, and methods
JP3808026B2 (ja) * 2002-10-23 2006-08-09 株式会社ルネサステクノロジ 半導体装置
US7375543B2 (en) * 2005-07-21 2008-05-20 Lsi Corporation Electrostatic discharge testing
US8294251B2 (en) * 2008-06-30 2012-10-23 Sandisk Technologies Inc. Stacked semiconductor package with localized cavities for wire bonding
US8218277B2 (en) * 2009-09-08 2012-07-10 Xilinx, Inc. Shared electrostatic discharge protection for integrated circuit output drivers
DE102010060465A1 (de) * 2010-11-09 2012-05-10 Harald Riegel Verfahren zur Kalibrierung einer Leitfähigkeitsmesszelle
CN108735729B (zh) * 2017-04-21 2021-04-06 上海和辉光电股份有限公司 电子设备及具备esd防护功能的芯片内部电路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03278571A (ja) 1990-03-28 1991-12-10 Nec Corp 出力バッファ
JP3016844B2 (ja) 1990-09-25 2000-03-06 日本電気株式会社 出力回路
JP3013624B2 (ja) * 1992-09-01 2000-02-28 日本電気株式会社 半導体集積回路装置
JPH0878624A (ja) * 1994-08-31 1996-03-22 Oki Electric Ind Co Ltd 半導体装置

Similar Documents

Publication Publication Date Title
JP2024161396A5 (https=)
JPH11177022A5 (https=)
JP3101077B2 (ja) 半導体集積回路装置
US7034365B2 (en) Integrated circuit devices having contact holes exposing gate electrodes in active regions
KR950002046A (ko) 반도체 집적회로 장치
JPH08335784A (ja) 多層配線基板
JP2633562B2 (ja) 半導体集積回路
JP3405508B2 (ja) 半導体集積回路
JPH0774322A (ja) Ｃｍｏｓインバータを備えた集積回路
JP3253549B2 (ja) 半導体集積回路装置
KR101032941B1 (ko) 박막 트랜지스터 표시판
US5977573A (en) Wiring pattern for a semiconductor integrated circuit device
JP3711139B2 (ja) 半導体装置
JP3108443B2 (ja) 表示装置駆動用半導体装置
US6353239B1 (en) Semiconductor integrated circuit device
JP3070542B2 (ja) 半導体装置
JPH0485872A (ja) 半導体装置
JP2614844B2 (ja) 半導体集積回路
JPH06120222A (ja) 半導体装置
KR20010059851A (ko) 디커플링 커패시터 구조를 갖는 반도체소자
JP3175678B2 (ja) 半導体集積回路装置
JP3123854B2 (ja) 半導体装置
JP2634800B2 (ja) 半導体集積回路スタンダードセル
JPH0427159A (ja) 半導体装置
JPS61125047A (ja) 半導体集積回路装置