KR100351452B1 - 디커플링 커패시터 구조를 갖는 반도체소자 - Google Patents
디커플링 커패시터 구조를 갖는 반도체소자 Download PDFInfo
- Publication number
- KR100351452B1 KR100351452B1 KR1019990067388A KR19990067388A KR100351452B1 KR 100351452 B1 KR100351452 B1 KR 100351452B1 KR 1019990067388 A KR1019990067388 A KR 1019990067388A KR 19990067388 A KR19990067388 A KR 19990067388A KR 100351452 B1 KR100351452 B1 KR 100351452B1
- Authority
- KR
- South Korea
- Prior art keywords
- decoupling capacitor
- semiconductor device
- semiconductor substrate
- wiring
- type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 239000003990 capacitor Substances 0.000 title abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000008054 signal transmission Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 abstract description 5
- 239000011229 interlayer Substances 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (3)
- 제1도전형 반도체 기판;상기 제1도전형 반도체 기판상에 형성된 입출력 버퍼회로;상기 입출력 버퍼회로의 출력라인에 연결된 상기 반도체 기판의 주변부에 형성된 신호 전달 배선; 및상기 신호전달 배선 하방측 상기 반도체 기판내에 형성된 제2도전형의 웰로 구성되고, 상기 제2도전형의 웰은 전원전압 배선에 연결되어 있는 것을 특징으로 하는 전원전압 배선의 노이즈 저감 구조를 갖는 반도체 소자.
- 제1항에 있어서,상기 제1도전형은 p형이고 제2도전형은 n형인 것을 특징으로 하는 전원전압 배선의 노이즈 저감 구조를 갖는 반도체 소자.
- 제1항에 있어서,상기 입출력 버퍼회로는 씨모스 인버터인 것을 특징으로 하는 전원전압 배선의 노이즈 저감 구조를 갖는 반도체 소자.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990067388A KR100351452B1 (ko) | 1999-12-30 | 1999-12-30 | 디커플링 커패시터 구조를 갖는 반도체소자 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990067388A KR100351452B1 (ko) | 1999-12-30 | 1999-12-30 | 디커플링 커패시터 구조를 갖는 반도체소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010059851A KR20010059851A (ko) | 2001-07-06 |
KR100351452B1 true KR100351452B1 (ko) | 2002-09-09 |
Family
ID=19634497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990067388A KR100351452B1 (ko) | 1999-12-30 | 1999-12-30 | 디커플링 커패시터 구조를 갖는 반도체소자 |
Country Status (1)
Country | Link |
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KR (1) | KR100351452B1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100721191B1 (ko) * | 2001-06-30 | 2007-05-23 | 주식회사 하이닉스반도체 | 반도체 소자의 디커플링 커패시터 형성 방법 |
JP4841204B2 (ja) * | 2005-08-31 | 2011-12-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR100810487B1 (ko) | 2005-12-08 | 2008-03-07 | 한국전자통신연구원 | 반도체 집적회로의 전원선 레이아웃 방법 및 그 방법을이용하여 제작된 반도체 집적 회로 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06132481A (ja) * | 1992-02-27 | 1994-05-13 | Philips Gloeilampenfab:Nv | Cmos集積回路 |
JPH11177022A (ja) * | 1997-12-08 | 1999-07-02 | Mitsubishi Electric Corp | 半導体集積回路装置 |
JPH11186497A (ja) * | 1997-12-17 | 1999-07-09 | Toshiba Corp | 半導体集積回路装置 |
KR20000003885A (ko) * | 1998-06-29 | 2000-01-25 | 윤종용 | 디커플링 커패시터를 갖는 반도체 장치 |
KR100261210B1 (ko) * | 1992-06-20 | 2000-07-01 | 윤종용 | 디커플링 커패시터의 형성방법 |
KR20000041463A (ko) * | 1998-12-22 | 2000-07-15 | 김영환 | 메모리소자의 파워를 위한 디커플링 캐패시터 |
-
1999
- 1999-12-30 KR KR1019990067388A patent/KR100351452B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06132481A (ja) * | 1992-02-27 | 1994-05-13 | Philips Gloeilampenfab:Nv | Cmos集積回路 |
KR100261210B1 (ko) * | 1992-06-20 | 2000-07-01 | 윤종용 | 디커플링 커패시터의 형성방법 |
JPH11177022A (ja) * | 1997-12-08 | 1999-07-02 | Mitsubishi Electric Corp | 半導体集積回路装置 |
JPH11186497A (ja) * | 1997-12-17 | 1999-07-09 | Toshiba Corp | 半導体集積回路装置 |
KR20000003885A (ko) * | 1998-06-29 | 2000-01-25 | 윤종용 | 디커플링 커패시터를 갖는 반도체 장치 |
KR20000041463A (ko) * | 1998-12-22 | 2000-07-15 | 김영환 | 메모리소자의 파워를 위한 디커플링 캐패시터 |
Also Published As
Publication number | Publication date |
---|---|
KR20010059851A (ko) | 2001-07-06 |
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