JPH11177022A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPH11177022A
JPH11177022A JP9337306A JP33730697A JPH11177022A JP H11177022 A JPH11177022 A JP H11177022A JP 9337306 A JP9337306 A JP 9337306A JP 33730697 A JP33730697 A JP 33730697A JP H11177022 A JPH11177022 A JP H11177022A
Authority
JP
Japan
Prior art keywords
wiring
insulating film
power supply
drive transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9337306A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11177022A5 (https=
Inventor
Gen Morishita
玄 森下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9337306A priority Critical patent/JPH11177022A/ja
Priority to US09/088,703 priority patent/US6323689B1/en
Priority to KR1019980051606A priority patent/KR100284153B1/ko
Publication of JPH11177022A publication Critical patent/JPH11177022A/ja
Publication of JPH11177022A5 publication Critical patent/JPH11177022A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP9337306A 1997-12-08 1997-12-08 半導体集積回路装置 Pending JPH11177022A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9337306A JPH11177022A (ja) 1997-12-08 1997-12-08 半導体集積回路装置
US09/088,703 US6323689B1 (en) 1997-12-08 1998-06-02 Semiconductor integrated circuit including output buffer circuit having high resistance to electro-static discharge
KR1019980051606A KR100284153B1 (ko) 1997-12-08 1998-11-28 반도체 집적 회로 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9337306A JPH11177022A (ja) 1997-12-08 1997-12-08 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPH11177022A true JPH11177022A (ja) 1999-07-02
JPH11177022A5 JPH11177022A5 (https=) 2005-06-09

Family

ID=18307396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9337306A Pending JPH11177022A (ja) 1997-12-08 1997-12-08 半導体集積回路装置

Country Status (3)

Country Link
US (1) US6323689B1 (https=)
JP (1) JPH11177022A (https=)
KR (1) KR100284153B1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100351452B1 (ko) * 1999-12-30 2002-09-09 주식회사 하이닉스반도체 디커플링 커패시터 구조를 갖는 반도체소자
KR20030002847A (ko) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP2013504201A (ja) * 2009-09-08 2013-02-04 ザイリンクス インコーポレイテッド 集積回路出力ドライバ用の共有静電放電保護

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW445575B (en) 2000-05-20 2001-07-11 Nanya Technology Corp Dynamic random access memory with guard ring and its manufacture method
DE10041139A1 (de) * 2000-08-21 2002-03-14 Philips Corp Intellectual Pty Anordnung zur Verbesserung des ESD-Schutzes bei einem CMOS Buffer
US6552372B2 (en) * 2001-04-05 2003-04-22 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit having improved ESD protection
US6937003B2 (en) * 2002-03-26 2005-08-30 Veris Industries, Llc Power monitoring system
KR100769800B1 (ko) * 2001-12-26 2007-10-23 주식회사 하이닉스반도체 멀티 플레인 블럭 어드레스 레지스터
JP2003209186A (ja) * 2002-01-15 2003-07-25 Seiko Epson Corp 半導体装置
SG111069A1 (en) * 2002-06-18 2005-05-30 Micron Technology Inc Semiconductor devices including peripherally located bond pads, assemblies, packages, and methods
JP3808026B2 (ja) * 2002-10-23 2006-08-09 株式会社ルネサステクノロジ 半導体装置
US7375543B2 (en) * 2005-07-21 2008-05-20 Lsi Corporation Electrostatic discharge testing
US8294251B2 (en) * 2008-06-30 2012-10-23 Sandisk Technologies Inc. Stacked semiconductor package with localized cavities for wire bonding
DE102010060465A1 (de) * 2010-11-09 2012-05-10 Harald Riegel Verfahren zur Kalibrierung einer Leitfähigkeitsmesszelle
CN108735729B (zh) * 2017-04-21 2021-04-06 上海和辉光电股份有限公司 电子设备及具备esd防护功能的芯片内部电路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03278571A (ja) 1990-03-28 1991-12-10 Nec Corp 出力バッファ
JP3016844B2 (ja) 1990-09-25 2000-03-06 日本電気株式会社 出力回路
JP3013624B2 (ja) * 1992-09-01 2000-02-28 日本電気株式会社 半導体集積回路装置
JPH0878624A (ja) * 1994-08-31 1996-03-22 Oki Electric Ind Co Ltd 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100351452B1 (ko) * 1999-12-30 2002-09-09 주식회사 하이닉스반도체 디커플링 커패시터 구조를 갖는 반도체소자
KR20030002847A (ko) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP2013504201A (ja) * 2009-09-08 2013-02-04 ザイリンクス インコーポレイテッド 集積回路出力ドライバ用の共有静電放電保護

Also Published As

Publication number Publication date
KR100284153B1 (ko) 2001-04-02
KR19990062633A (ko) 1999-07-26
US6323689B1 (en) 2001-11-27

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