KR100284153B1 - 반도체 집적 회로 장치 - Google Patents

반도체 집적 회로 장치 Download PDF

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Publication number
KR100284153B1
KR100284153B1 KR1019980051606A KR19980051606A KR100284153B1 KR 100284153 B1 KR100284153 B1 KR 100284153B1 KR 1019980051606 A KR1019980051606 A KR 1019980051606A KR 19980051606 A KR19980051606 A KR 19980051606A KR 100284153 B1 KR100284153 B1 KR 100284153B1
Authority
KR
South Korea
Prior art keywords
driving transistor
insulating film
wiring
power supply
driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980051606A
Other languages
English (en)
Korean (ko)
Other versions
KR19990062633A (ko
Inventor
후까시 모리시따
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 다니구찌 이찌로오, 기타오카 다카시
Publication of KR19990062633A publication Critical patent/KR19990062633A/ko
Application granted granted Critical
Publication of KR100284153B1 publication Critical patent/KR100284153B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
KR1019980051606A 1997-12-08 1998-11-28 반도체 집적 회로 장치 Expired - Fee Related KR100284153B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP97-337306 1997-12-08
JP9337306A JPH11177022A (ja) 1997-12-08 1997-12-08 半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR19990062633A KR19990062633A (ko) 1999-07-26
KR100284153B1 true KR100284153B1 (ko) 2001-04-02

Family

ID=18307396

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980051606A Expired - Fee Related KR100284153B1 (ko) 1997-12-08 1998-11-28 반도체 집적 회로 장치

Country Status (3)

Country Link
US (1) US6323689B1 (https=)
JP (1) JPH11177022A (https=)
KR (1) KR100284153B1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100351452B1 (ko) * 1999-12-30 2002-09-09 주식회사 하이닉스반도체 디커플링 커패시터 구조를 갖는 반도체소자
TW445575B (en) 2000-05-20 2001-07-11 Nanya Technology Corp Dynamic random access memory with guard ring and its manufacture method
DE10041139A1 (de) * 2000-08-21 2002-03-14 Philips Corp Intellectual Pty Anordnung zur Verbesserung des ESD-Schutzes bei einem CMOS Buffer
US6552372B2 (en) * 2001-04-05 2003-04-22 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit having improved ESD protection
KR20030002847A (ko) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US6937003B2 (en) * 2002-03-26 2005-08-30 Veris Industries, Llc Power monitoring system
KR100769800B1 (ko) * 2001-12-26 2007-10-23 주식회사 하이닉스반도체 멀티 플레인 블럭 어드레스 레지스터
JP2003209186A (ja) * 2002-01-15 2003-07-25 Seiko Epson Corp 半導体装置
SG111069A1 (en) * 2002-06-18 2005-05-30 Micron Technology Inc Semiconductor devices including peripherally located bond pads, assemblies, packages, and methods
JP3808026B2 (ja) * 2002-10-23 2006-08-09 株式会社ルネサステクノロジ 半導体装置
US7375543B2 (en) * 2005-07-21 2008-05-20 Lsi Corporation Electrostatic discharge testing
US8294251B2 (en) * 2008-06-30 2012-10-23 Sandisk Technologies Inc. Stacked semiconductor package with localized cavities for wire bonding
US8218277B2 (en) * 2009-09-08 2012-07-10 Xilinx, Inc. Shared electrostatic discharge protection for integrated circuit output drivers
DE102010060465A1 (de) * 2010-11-09 2012-05-10 Harald Riegel Verfahren zur Kalibrierung einer Leitfähigkeitsmesszelle
CN108735729B (zh) * 2017-04-21 2021-04-06 上海和辉光电股份有限公司 电子设备及具备esd防护功能的芯片内部电路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03278571A (ja) 1990-03-28 1991-12-10 Nec Corp 出力バッファ
JP3016844B2 (ja) 1990-09-25 2000-03-06 日本電気株式会社 出力回路
JP3013624B2 (ja) * 1992-09-01 2000-02-28 日本電気株式会社 半導体集積回路装置
JPH0878624A (ja) * 1994-08-31 1996-03-22 Oki Electric Ind Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPH11177022A (ja) 1999-07-02
KR19990062633A (ko) 1999-07-26
US6323689B1 (en) 2001-11-27

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