JPH08330505A - 集積回路相互接続部 - Google Patents
集積回路相互接続部Info
- Publication number
- JPH08330505A JPH08330505A JP8079240A JP7924096A JPH08330505A JP H08330505 A JPH08330505 A JP H08330505A JP 8079240 A JP8079240 A JP 8079240A JP 7924096 A JP7924096 A JP 7924096A JP H08330505 A JPH08330505 A JP H08330505A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- tungsten
- barrier layer
- conductive
- interconnect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 165
- 239000010937 tungsten Substances 0.000 claims abstract description 163
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 162
- 230000004888 barrier function Effects 0.000 claims abstract description 133
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 90
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims description 43
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 28
- 239000010936 titanium Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 230000009977 dual effect Effects 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000005304 joining Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002775 capsule Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241001077419 Damas Species 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 108010053481 Antifreeze Proteins Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76847—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned within the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41355795A | 1995-03-30 | 1995-03-30 | |
| US08/413,557 | 1995-03-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08330505A true JPH08330505A (ja) | 1996-12-13 |
Family
ID=23637690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8079240A Abandoned JPH08330505A (ja) | 1995-03-30 | 1996-04-01 | 集積回路相互接続部 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US5840625A (enrdf_load_stackoverflow) |
| EP (1) | EP0735585A3 (enrdf_load_stackoverflow) |
| JP (1) | JPH08330505A (enrdf_load_stackoverflow) |
| KR (1) | KR100424024B1 (enrdf_load_stackoverflow) |
| TW (1) | TW290731B (enrdf_load_stackoverflow) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100230392B1 (ko) | 1996-12-05 | 1999-11-15 | 윤종용 | 반도체 소자의 콘택 플러그 형성방법 |
| US6429120B1 (en) | 2000-01-18 | 2002-08-06 | Micron Technology, Inc. | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals |
| KR100243272B1 (ko) * | 1996-12-20 | 2000-03-02 | 윤종용 | 반도체 소자의 콘택 플러그 형성방법 |
| US6054768A (en) * | 1997-10-02 | 2000-04-25 | Micron Technology, Inc. | Metal fill by treatment of mobility layers |
| US6281121B1 (en) * | 1998-03-06 | 2001-08-28 | Advanced Micro Devices, Inc. | Damascene metal interconnects using highly directional deposition of barrier and/or seed layers including (III) filling metal |
| US6051496A (en) * | 1998-09-17 | 2000-04-18 | Taiwan Semiconductor Manufacturing Company | Use of stop layer for chemical mechanical polishing of CU damascene |
| KR100546173B1 (ko) * | 1998-09-21 | 2006-04-14 | 주식회사 하이닉스반도체 | 반도체소자의 금속배선 형성방법 |
| US6478976B1 (en) * | 1998-12-30 | 2002-11-12 | Stmicroelectronics, Inc. | Apparatus and method for contacting a conductive layer |
| JP3048567B1 (ja) * | 1999-02-18 | 2000-06-05 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| US6144099A (en) * | 1999-03-30 | 2000-11-07 | Advanced Micro Devices, Inc. | Semiconductor metalization barrier |
| US6391761B1 (en) | 1999-09-20 | 2002-05-21 | Taiwan Semiconductor Manufacturing Company | Method to form dual damascene structures using a linear passivation |
| US6420262B1 (en) * | 2000-01-18 | 2002-07-16 | Micron Technology, Inc. | Structures and methods to enhance copper metallization |
| US7211512B1 (en) | 2000-01-18 | 2007-05-01 | Micron Technology, Inc. | Selective electroless-plated copper metallization |
| US7262130B1 (en) | 2000-01-18 | 2007-08-28 | Micron Technology, Inc. | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals |
| US6812130B1 (en) | 2000-02-09 | 2004-11-02 | Infineon Technologies Ag | Self-aligned dual damascene etch using a polymer |
| US6534866B1 (en) * | 2000-04-13 | 2003-03-18 | Micron Technology, Inc. | Dual damascene interconnect |
| US6674167B1 (en) | 2000-05-31 | 2004-01-06 | Micron Technology, Inc. | Multilevel copper interconnect with double passivation |
| JP4587604B2 (ja) * | 2001-06-13 | 2010-11-24 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP3980387B2 (ja) * | 2002-03-20 | 2007-09-26 | 富士通株式会社 | 容量検出型センサ及びその製造方法 |
| US6888251B2 (en) * | 2002-07-01 | 2005-05-03 | International Business Machines Corporation | Metal spacer in single and dual damascene processing |
| US8471390B2 (en) * | 2006-05-12 | 2013-06-25 | Vishay-Siliconix | Power MOSFET contact metallization |
| DE102006025405B4 (de) * | 2006-05-31 | 2018-03-29 | Globalfoundries Inc. | Verfahren zur Herstellung einer Metallisierungsschicht eines Halbleiterbauelements mit unterschiedlich dicken Metallleitungen |
| US20070283832A1 (en) * | 2006-06-09 | 2007-12-13 | Apple Computer, Inc. | Imprint circuit patterning |
| US8723325B2 (en) * | 2009-05-06 | 2014-05-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method of forming a pad structure having enhanced reliability |
| US9306056B2 (en) | 2009-10-30 | 2016-04-05 | Vishay-Siliconix | Semiconductor device with trench-like feed-throughs |
| US8569168B2 (en) | 2012-02-13 | 2013-10-29 | International Business Machines Corporation | Dual-metal self-aligned wires and vias |
| MX2017012126A (es) * | 2015-03-24 | 2018-02-19 | Vesuvius Crucible Co | Revestimiento interior de recipiente metalurgico con estructura de perforacion configurada. |
| CN108122820B (zh) | 2016-11-29 | 2020-06-02 | 中芯国际集成电路制造(上海)有限公司 | 互连结构及其制造方法 |
| US11705414B2 (en) * | 2017-10-05 | 2023-07-18 | Texas Instruments Incorporated | Structure and method for semiconductor packaging |
| DE102019131909B4 (de) | 2018-11-30 | 2024-10-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vorrichtung und herstellungsverfahren |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01107558A (ja) * | 1987-10-20 | 1989-04-25 | Matsushita Electric Ind Co Ltd | 金属薄膜配線の製造方法 |
| US4997789A (en) * | 1988-10-31 | 1991-03-05 | Texas Instruments Incorporated | Aluminum contact etch mask and etchstop for tungsten etchback |
| US5202287A (en) * | 1989-01-06 | 1993-04-13 | International Business Machines Corporation | Method for a two step selective deposition of refractory metals utilizing SiH4 reduction and H2 reduction |
| US5141897A (en) * | 1990-03-23 | 1992-08-25 | At&T Bell Laboratories | Method of making integrated circuit interconnection |
| US5200539A (en) * | 1990-08-27 | 1993-04-06 | Louisiana State University Board Of Supervisors, A Governing Body Of Louisiana State University Agricultural And Mechanical College | Homogeneous bimetallic hydroformylation catalysts, and processes utilizing these catalysts for conducting hydroformylation reactions |
| US5155063A (en) * | 1990-10-09 | 1992-10-13 | Nec Corporation | Method of fabricating semiconductor device including an al/tin/ti contact |
| JPH04320330A (ja) * | 1991-04-19 | 1992-11-11 | Sharp Corp | 半導体装置のコンタクト部の形成方法 |
| US5192703A (en) * | 1991-10-31 | 1993-03-09 | Micron Technology, Inc. | Method of making tungsten contact core stack capacitor |
| US5300813A (en) * | 1992-02-26 | 1994-04-05 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
| US5262354A (en) * | 1992-02-26 | 1993-11-16 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
| KR950006345B1 (ko) * | 1992-05-16 | 1995-06-14 | 한국과학기술연구원 | 텅스텐질화박막을 베리어메탈로 이용한 실리콘 반도체소자의 알루미늄금속배선 형성방법 |
| KR950011553B1 (ko) * | 1992-06-16 | 1995-10-06 | 삼성전자주식회사 | 금속배선 형성방법 |
-
1996
- 1996-03-01 TW TW085102484A patent/TW290731B/zh active
- 1996-03-08 EP EP96103697A patent/EP0735585A3/en not_active Withdrawn
- 1996-03-29 KR KR1019960009023A patent/KR100424024B1/ko not_active Expired - Fee Related
- 1996-04-01 JP JP8079240A patent/JPH08330505A/ja not_active Abandoned
- 1996-10-04 US US08/726,443 patent/US5840625A/en not_active Expired - Lifetime
-
1998
- 1998-02-17 US US09/024,998 patent/US6016008A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5840625A (en) | 1998-11-24 |
| KR960035841A (ko) | 1996-10-28 |
| KR100424024B1 (ko) | 2004-06-23 |
| EP0735585A3 (en) | 1997-01-15 |
| TW290731B (enrdf_load_stackoverflow) | 1996-11-11 |
| EP0735585A2 (en) | 1996-10-02 |
| US6016008A (en) | 2000-01-18 |
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