JPH08236622A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH08236622A
JPH08236622A JP7064905A JP6490595A JPH08236622A JP H08236622 A JPH08236622 A JP H08236622A JP 7064905 A JP7064905 A JP 7064905A JP 6490595 A JP6490595 A JP 6490595A JP H08236622 A JPH08236622 A JP H08236622A
Authority
JP
Japan
Prior art keywords
conductive
insulating layer
conductive region
wiring
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7064905A
Other languages
English (en)
Japanese (ja)
Inventor
Hiroyuki Kurino
浩之 栗野
Yoichi Miyai
羊一 宮井
Yoshihiro Ogata
善広 尾形
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Japan Ltd
Original Assignee
Texas Instruments Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Japan Ltd filed Critical Texas Instruments Japan Ltd
Priority to JP7064905A priority Critical patent/JPH08236622A/ja
Priority to KR1019960005070A priority patent/KR100474953B1/ko
Priority to TW085104321A priority patent/TW308736B/zh
Publication of JPH08236622A publication Critical patent/JPH08236622A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP7064905A 1995-02-28 1995-02-28 半導体装置及びその製造方法 Pending JPH08236622A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP7064905A JPH08236622A (ja) 1995-02-28 1995-02-28 半導体装置及びその製造方法
KR1019960005070A KR100474953B1 (ko) 1995-02-28 1996-02-28 반도체장치및그제조방법
TW085104321A TW308736B (enExample) 1995-02-28 1996-04-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7064905A JPH08236622A (ja) 1995-02-28 1995-02-28 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
JPH08236622A true JPH08236622A (ja) 1996-09-13

Family

ID=13271550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7064905A Pending JPH08236622A (ja) 1995-02-28 1995-02-28 半導体装置及びその製造方法

Country Status (3)

Country Link
JP (1) JPH08236622A (enExample)
KR (1) KR100474953B1 (enExample)
TW (1) TW308736B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100578117B1 (ko) * 1998-12-21 2006-09-27 삼성전자주식회사 반도체 장치의 배선 형성 방법
KR20170126682A (ko) * 2016-05-10 2017-11-20 한국과학기술원 스트레인 센서 및 이의 제조방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100727449B1 (ko) * 2000-09-25 2007-06-13 하이닉스 세미컨덕터 매뉴팩쳐링 아메리카 인코포레이티드 고도전성 게이트, 로컬 인터커넥트 또는 커패시터 노드를 갖는 집적 장치
KR100868607B1 (ko) * 2008-02-21 2008-11-13 가부시키가이샤 히타치세이사쿠쇼 반도체 장치 및 그 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833096A (en) * 1988-01-19 1989-05-23 Atmel Corporation EEPROM fabrication process
JP2892443B2 (ja) * 1990-06-13 1999-05-17 沖電気工業株式会社 半導体装置の製造方法
JP3123092B2 (ja) * 1991-03-06 2001-01-09 日本電気株式会社 半導体装置の製造方法
JPH05343401A (ja) * 1992-06-12 1993-12-24 Fujitsu Ltd 半導体装置
JPH06163711A (ja) * 1992-11-20 1994-06-10 Mitsubishi Electric Corp 半導体装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100578117B1 (ko) * 1998-12-21 2006-09-27 삼성전자주식회사 반도체 장치의 배선 형성 방법
KR20170126682A (ko) * 2016-05-10 2017-11-20 한국과학기술원 스트레인 센서 및 이의 제조방법

Also Published As

Publication number Publication date
TW308736B (enExample) 1997-06-21
KR100474953B1 (ko) 2005-05-18
KR960032687A (ko) 1996-09-17

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