KR100474953B1 - 반도체장치및그제조방법 - Google Patents

반도체장치및그제조방법 Download PDF

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Publication number
KR100474953B1
KR100474953B1 KR1019960005070A KR19960005070A KR100474953B1 KR 100474953 B1 KR100474953 B1 KR 100474953B1 KR 1019960005070 A KR1019960005070 A KR 1019960005070A KR 19960005070 A KR19960005070 A KR 19960005070A KR 100474953 B1 KR100474953 B1 KR 100474953B1
Authority
KR
South Korea
Prior art keywords
layer
conductive
wiring
insulating layer
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960005070A
Other languages
English (en)
Korean (ko)
Other versions
KR960032687A (ko
Inventor
히로유끼 구리노
요이끼 미야이
요시히로 오가따
Original Assignee
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 텍사스 인스트루먼츠 인코포레이티드 filed Critical 텍사스 인스트루먼츠 인코포레이티드
Publication of KR960032687A publication Critical patent/KR960032687A/ko
Application granted granted Critical
Publication of KR100474953B1 publication Critical patent/KR100474953B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019960005070A 1995-02-28 1996-02-28 반도체장치및그제조방법 Expired - Fee Related KR100474953B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-064905 1995-02-28
JP7064905A JPH08236622A (ja) 1995-02-28 1995-02-28 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR960032687A KR960032687A (ko) 1996-09-17
KR100474953B1 true KR100474953B1 (ko) 2005-05-18

Family

ID=13271550

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960005070A Expired - Fee Related KR100474953B1 (ko) 1995-02-28 1996-02-28 반도체장치및그제조방법

Country Status (3)

Country Link
JP (1) JPH08236622A (enExample)
KR (1) KR100474953B1 (enExample)
TW (1) TW308736B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100578117B1 (ko) * 1998-12-21 2006-09-27 삼성전자주식회사 반도체 장치의 배선 형성 방법
KR100727449B1 (ko) * 2000-09-25 2007-06-13 하이닉스 세미컨덕터 매뉴팩쳐링 아메리카 인코포레이티드 고도전성 게이트, 로컬 인터커넥트 또는 커패시터 노드를 갖는 집적 장치
KR100868607B1 (ko) * 2008-02-21 2008-11-13 가부시키가이샤 히타치세이사쿠쇼 반도체 장치 및 그 제조 방법
KR101885766B1 (ko) * 2016-05-10 2018-08-06 한국과학기술원 스트레인 센서 및 이의 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833096A (en) * 1988-01-19 1989-05-23 Atmel Corporation EEPROM fabrication process
JPH0445571A (ja) * 1990-06-13 1992-02-14 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5210053A (en) * 1991-03-06 1993-05-11 Nec Corporation Method for fabricating semiconductor device
JPH05343401A (ja) * 1992-06-12 1993-12-24 Fujitsu Ltd 半導体装置
JPH06163711A (ja) * 1992-11-20 1994-06-10 Mitsubishi Electric Corp 半導体装置及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833096A (en) * 1988-01-19 1989-05-23 Atmel Corporation EEPROM fabrication process
JPH0445571A (ja) * 1990-06-13 1992-02-14 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5210053A (en) * 1991-03-06 1993-05-11 Nec Corporation Method for fabricating semiconductor device
JPH05343401A (ja) * 1992-06-12 1993-12-24 Fujitsu Ltd 半導体装置
JPH06163711A (ja) * 1992-11-20 1994-06-10 Mitsubishi Electric Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
TW308736B (enExample) 1997-06-21
JPH08236622A (ja) 1996-09-13
KR960032687A (ko) 1996-09-17

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