TW308736B - - Google Patents
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- Publication number
- TW308736B TW308736B TW085104321A TW85104321A TW308736B TW 308736 B TW308736 B TW 308736B TW 085104321 A TW085104321 A TW 085104321A TW 85104321 A TW85104321 A TW 85104321A TW 308736 B TW308736 B TW 308736B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive
- aforementioned
- insulating layer
- area
- connection hole
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 claims description 36
- 239000004020 conductor Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 239000013589 supplement Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 64
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 19
- 239000010408 film Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- -1 aluminum Chemical class 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000002079 cooperative effect Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000008267 milk Substances 0.000 description 2
- 210000004080 milk Anatomy 0.000 description 2
- 235000013336 milk Nutrition 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7064905A JPH08236622A (ja) | 1995-02-28 | 1995-02-28 | 半導体装置及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW308736B true TW308736B (enExample) | 1997-06-21 |
Family
ID=13271550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085104321A TW308736B (enExample) | 1995-02-28 | 1996-04-12 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH08236622A (enExample) |
| KR (1) | KR100474953B1 (enExample) |
| TW (1) | TW308736B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100578117B1 (ko) * | 1998-12-21 | 2006-09-27 | 삼성전자주식회사 | 반도체 장치의 배선 형성 방법 |
| KR100727449B1 (ko) * | 2000-09-25 | 2007-06-13 | 하이닉스 세미컨덕터 매뉴팩쳐링 아메리카 인코포레이티드 | 고도전성 게이트, 로컬 인터커넥트 또는 커패시터 노드를 갖는 집적 장치 |
| KR100868607B1 (ko) * | 2008-02-21 | 2008-11-13 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 장치 및 그 제조 방법 |
| KR101885766B1 (ko) * | 2016-05-10 | 2018-08-06 | 한국과학기술원 | 스트레인 센서 및 이의 제조방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4833096A (en) * | 1988-01-19 | 1989-05-23 | Atmel Corporation | EEPROM fabrication process |
| JP2892443B2 (ja) * | 1990-06-13 | 1999-05-17 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| JP3123092B2 (ja) * | 1991-03-06 | 2001-01-09 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH05343401A (ja) * | 1992-06-12 | 1993-12-24 | Fujitsu Ltd | 半導体装置 |
| JPH06163711A (ja) * | 1992-11-20 | 1994-06-10 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
-
1995
- 1995-02-28 JP JP7064905A patent/JPH08236622A/ja active Pending
-
1996
- 1996-02-28 KR KR1019960005070A patent/KR100474953B1/ko not_active Expired - Fee Related
- 1996-04-12 TW TW085104321A patent/TW308736B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR960032687A (ko) | 1996-09-17 |
| KR100474953B1 (ko) | 2005-05-18 |
| JPH08236622A (ja) | 1996-09-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |