TW301788B - - Google Patents

Info

Publication number

TW301788B

TW301788B TW085104325A TW85104325A TW301788B TW 301788 B TW301788 B TW 301788B TW 085104325 A TW085104325 A TW 085104325A TW 85104325 A TW85104325 A TW 85104325A TW 301788 B TW301788 B TW 301788B

Authority

TW

Taiwan

Prior art keywords

aforementioned

peripheral circuit

layer

capacitor

circuit

Prior art date

1995-02-28

Links

• Espacenet
• Global Dossier
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• 230000002093 peripheral effect Effects 0.000 claims description 59
• 238000004519 manufacturing process Methods 0.000 claims description 42
• 239000000463 material Substances 0.000 claims description 42
• 239000003990 capacitor Substances 0.000 claims description 41
• 210000004027 cell Anatomy 0.000 claims description 30
• 239000004065 semiconductor Substances 0.000 claims description 17
• 239000007772 electrode material Substances 0.000 claims description 14
• 230000015572 biosynthetic process Effects 0.000 claims description 12
• 239000010409 thin film Substances 0.000 claims description 9
• 210000003850 cellular structure Anatomy 0.000 claims description 5
• 239000000203 mixture Substances 0.000 claims description 2
• PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
• 239000010410 layer Substances 0.000 description 85
• 239000010408 film Substances 0.000 description 29
• 238000000034 method Methods 0.000 description 21
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
• 229910052710 silicon Inorganic materials 0.000 description 14
• 239000010703 silicon Substances 0.000 description 14
• 238000003860 storage Methods 0.000 description 13
• 239000000758 substrate Substances 0.000 description 11
• 238000005530 etching Methods 0.000 description 10
• 239000000377 silicon dioxide Substances 0.000 description 10
• 235000012239 silicon dioxide Nutrition 0.000 description 10
• 229910052782 aluminium Inorganic materials 0.000 description 9
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
• 239000004020 conductor Substances 0.000 description 8
• 238000009792 diffusion process Methods 0.000 description 8
• 230000006870 function Effects 0.000 description 8
• 239000011229 interlayer Substances 0.000 description 8
• 238000000206 photolithography Methods 0.000 description 7
• 238000010586 diagram Methods 0.000 description 5
• 230000008859 change Effects 0.000 description 4
• 230000000694 effects Effects 0.000 description 4
• 238000009413 insulation Methods 0.000 description 4
• 229910052751 metal Inorganic materials 0.000 description 4
• 239000002184 metal Substances 0.000 description 4
• 229920002120 photoresistant polymer Polymers 0.000 description 4
• 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
• 229920005591 polysilicon Polymers 0.000 description 4
• 238000005507 spraying Methods 0.000 description 4
• 238000005516 engineering process Methods 0.000 description 3
• 230000009286 beneficial effect Effects 0.000 description 2
• 239000002019 doping agent Substances 0.000 description 2
• 239000012789 electroconductive film Substances 0.000 description 2
• BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
• 230000002452 interceptive effect Effects 0.000 description 2
• 238000005468 ion implantation Methods 0.000 description 2
• 238000001459 lithography Methods 0.000 description 2
• 238000001556 precipitation Methods 0.000 description 2
• 238000002360 preparation method Methods 0.000 description 2
• 230000008569 process Effects 0.000 description 2
• 238000000926 separation method Methods 0.000 description 2
• ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
• 229910052581 Si3N4 Inorganic materials 0.000 description 1
• RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
• NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
• KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
• -1 aluminum Chemical compound 0.000 description 1
• 229910052785 arsenic Inorganic materials 0.000 description 1
• RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
• 230000004888 barrier function Effects 0.000 description 1
• 239000011324 bead Substances 0.000 description 1
• 229910052796 boron Inorganic materials 0.000 description 1
• 239000005380 borophosphosilicate glass Substances 0.000 description 1
• 210000000038 chest Anatomy 0.000 description 1
• 238000005429 filling process Methods 0.000 description 1
• 230000008570 general process Effects 0.000 description 1
• 239000011521 glass Substances 0.000 description 1
• PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
• 239000010931 gold Substances 0.000 description 1
• 229910052737 gold Inorganic materials 0.000 description 1
• 229910001922 gold oxide Inorganic materials 0.000 description 1
• 230000006872 improvement Effects 0.000 description 1
• 230000001939 inductive effect Effects 0.000 description 1
• 238000009434 installation Methods 0.000 description 1
• 150000002739 metals Chemical class 0.000 description 1
• 150000004767 nitrides Chemical class 0.000 description 1
• 229910052757 nitrogen Inorganic materials 0.000 description 1
• IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
• 230000008520 organization Effects 0.000 description 1
• 230000003647 oxidation Effects 0.000 description 1
• 238000007254 oxidation reaction Methods 0.000 description 1
• 238000012856 packing Methods 0.000 description 1
• 238000001259 photo etching Methods 0.000 description 1
• 230000009467 reduction Effects 0.000 description 1
• 238000005096 rolling process Methods 0.000 description 1
• 230000001568 sexual effect Effects 0.000 description 1
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
• 239000002356 single layer Substances 0.000 description 1
• 239000000126 substance Substances 0.000 description 1
• 239000010936 titanium Substances 0.000 description 1
• 229910052719 titanium Inorganic materials 0.000 description 1
• 229910021341 titanium silicide Inorganic materials 0.000 description 1