TW295709B - - Google Patents
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- Publication number
- TW295709B TW295709B TW085104329A TW85104329A TW295709B TW 295709 B TW295709 B TW 295709B TW 085104329 A TW085104329 A TW 085104329A TW 85104329 A TW85104329 A TW 85104329A TW 295709 B TW295709 B TW 295709B
- Authority
- TW
- Taiwan
- Prior art keywords
- bit line
- aforementioned
- manufacturing
- contact hole
- section
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 claims description 105
- 230000015654 memory Effects 0.000 claims description 100
- 238000000034 method Methods 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 52
- 238000003860 storage Methods 0.000 claims description 39
- 239000003990 capacitor Substances 0.000 claims description 27
- 238000011049 filling Methods 0.000 claims description 23
- 239000004020 conductor Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 107
- 239000010408 film Substances 0.000 description 61
- 239000010410 layer Substances 0.000 description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 31
- 238000005530 etching Methods 0.000 description 23
- 239000000758 substrate Substances 0.000 description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 15
- 235000012239 silicon dioxide Nutrition 0.000 description 15
- 239000000377 silicon dioxide Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 150000004767 nitrides Chemical class 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 10
- 239000010409 thin film Substances 0.000 description 8
- 230000006870 function Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000010301 surface-oxidation reaction Methods 0.000 description 6
- 230000002452 interceptive effect Effects 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000002730 additional effect Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 210000001082 somatic cell Anatomy 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008938 W—Si Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012789 electroconductive film Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06490395A JP3355511B2 (ja) | 1995-02-28 | 1995-02-28 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW295709B true TW295709B (enExample) | 1997-01-11 |
Family
ID=13271496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085104329A TW295709B (enExample) | 1995-02-28 | 1996-04-12 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3355511B2 (enExample) |
| TW (1) | TW295709B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100218295B1 (ko) * | 1995-12-30 | 1999-09-01 | 구본준 | 반도체 메모리셀 제조방법 |
| TW454339B (en) * | 1997-06-20 | 2001-09-11 | Hitachi Ltd | Semiconductor integrated circuit apparatus and its fabricating method |
| US6380026B2 (en) | 1997-08-22 | 2002-04-30 | Micron Technology, Inc. | Processing methods of forming integrated circuitry memory devices, methods of forming DRAM arrays, and related semiconductor masks |
| KR100487915B1 (ko) * | 1997-12-31 | 2005-08-01 | 주식회사 하이닉스반도체 | 반도체소자의캐패시터형성방법 |
| KR100275334B1 (ko) * | 1997-12-31 | 2001-01-15 | 김영환 | 반도체소자의제조방법 |
| KR100487511B1 (ko) * | 1998-07-06 | 2005-08-01 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| JP4528504B2 (ja) * | 2003-08-22 | 2010-08-18 | ルネサスエレクトロニクス株式会社 | 半導体装置とその製造方法 |
-
1995
- 1995-02-28 JP JP06490395A patent/JP3355511B2/ja not_active Expired - Fee Related
-
1996
- 1996-04-12 TW TW085104329A patent/TW295709B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08236720A (ja) | 1996-09-13 |
| JP3355511B2 (ja) | 2002-12-09 |
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